Presentation is loading. Please wait.

Presentation is loading. Please wait.

RF Power for VTS & HTS Purushottam Shrivastava, P. Mohania, D. Baxy, V. Rajput PHPMS Raja Ramanna Centre for Advanced Technology, Indore October 28, 2010.

Similar presentations


Presentation on theme: "RF Power for VTS & HTS Purushottam Shrivastava, P. Mohania, D. Baxy, V. Rajput PHPMS Raja Ramanna Centre for Advanced Technology, Indore October 28, 2010."— Presentation transcript:

1

2 RF Power for VTS & HTS Purushottam Shrivastava, P. Mohania, D. Baxy, V. Rajput PHPMS Raja Ramanna Centre for Advanced Technology, Indore October 28, 2010

3 Outline  High power microwave systems & components development 20MeV Microtron, 8MeV Microtron,10 MeV LINAC, S Band Test Stands for klystron and magnetron development, 352.2 MHz 1.3 MW Test Stand, 45 MW S Band Test facility  High voltage pulse modulator development  Waveguide components development  1.3 GHz cavity measurements  VTS RF Status and plans

4 High power microwave systems at a glance

5 DeviceParameters Machine/UseStatus PWR/Freq. Voltage 1.Klystron5MW, 20MeVOperational 2856MHz SRS Injector> 17yrs 127kV,86ARRCAT 2.Magnetron 2MW,29988/12MeV, Operational 41kV,100ANuclear Physics Mangalore Uni.>14yrs 3.Klystron6MW,25 kW10MeV Operational 2856MHzLINAC RRCAT 14µsec 5.Magnetron3MW,299810MeVTest facility 55kV,120A S Band Pulsed High Power Microwave systems..

6 Test stations developed by RRCAT for Indigenous microwave tube development (with CEERI Collaboration) 1.Klystron5MW,2856Test station developed and supplied 130kV,90Aby RRCAT to CEERI. 5microsec 2.Magnetron2MW, 2998Test station developed 42kV,110A and supplied by RRCAT to CEERI 5microsec 250Hz 3.Magnetron3MW, 2998 5microsec Test station developed. 300Hz

7 5MW PULSED KLYSTRON BASED SYSTEM FOR 20MeV MICROTRON 6MW, 25kW PULSED SYSTEM FOR 10MeV LINAC 2MW PULSED MAGNETRON SYSTEM and 8MeV Microtron delivered to Mangalore University

8 Measured with automatic Microwave Peak power meter

9 8.5 W module 25W module 75 W module two 160W modules with divider and combiner 300W S-Band SSPA Module Solid State Amplifier Development at PHPMS

10 PHPMS Section has developed S-Band Pulsed Solid State Amplifier using Class-C transistors upto 300W These amplifiers have been incorporated in the RF Systems of the 20MeV Microtron (preinjector for INDUS I and INDUS II SRS) and 10MeV Electron LINAC. We are working to develop high power (upto 500W) Solid State amplifier at 1.3GHz in both pulsed and CW modes. These amplifiers are used in VTS subsystems. Driver stage (2W amplifier ) have been developed and tested. Components for high power stages are have been ordered. 300W Amplifier Module S-Band Amplifier used in Indus Complex

11 5MW KLYSTRON HIGH POWER TEST STATION DEVELOPED BY (RR)CAT Results of first prototype at 5.14 MW 2MW MAGNETRON HIGH POWER TEST STATION DEVELOPED BY (RR)CAT S Band Test Stands for Klystron/magnetron development

12 Solid state bouncer modulators and pulsed RF test stand

13 ParameterDesign Targets Klystron modulator typeBouncer High Voltage pulse amplitude-10kV to –110 kV High Voltage pulse width measured at 70% to 70 % of peak. 800  sec Minimum Flat top available 600  sec Maximum current during pulse24A Pulse repetition rate2 Hz Acceptable voltage drop≤ 1.0 % Allowed ripple on flat top≤ 0.1 % Rise time/fall time<100 μsec Energy dissipated in klystron during klystron arc <10J Specifications of Solid State Modulator

14 Scheme

15 Trigger waveform of IGBT switch C1 – Pulse going to optical transmitter C2 – Trigger pulse to IGBT gate Short circuit current protection tests C1 – Ouput voltage at secondary of pulse transformer C2 – Primary voltage pulse C3 – Output current to the load side Development of 12kV, 200A IGBT switch for long pulse Modulator @PHPMS RRCAT IGBT Module HV Isolation

16 Work Reported in LINAC 08 conference

17 Modulator connected to 110kV resistive load Bouncer elements and HV switch assembly Charging and filament supplies Interlock, control and trigger chassis. Solid State Modulator

18 Waveforms from top o/p voltage 104kV@20kV/div, o/p current @5A/div, Time scale 100 µsec/ div. Acceptance evaluation of RRCAT bouncer modulator at CERN

19 High power waveguide components

20 Rectangular waveguides TypeWR23001500 Freq.MHz320-490490-750 MaterialAl alloy 6061 6061 Attenuation dB/m0.0020.0026 % / 100m4.66.4 Dimensions Broad mm  0.25 584.2381.0 Narrow mm  0.25 292.1190.5 23” 11.5” WR2300 5mm Fabrication Tests Test results WR 2300 Waveguide components

21 20 VSWR 1:1.07

22 WR 2300 waveguide components Development of WR 2300 Half & Full height Waveguide structures & Transitions Development and tests on 31/8” Coaxial and WR 2300 FH Water loads

23

24 352.2 MHz, 1.3 MW pk power Test stand developed at RRCAT using LEP 2089 Klystron from CERN From top: klystron anode voltage @20kV/div, klystron anode current @10A/div and 1.3MW, 352.2 MHz, pulsed power output detected. 1.3 MW 352.2 MHz Test Stand at RRCAT

25 1.3 MW Test Stand

26 Purushottam Shrivastava, 4 Feb 2010 25 Sr. No. 089039 Filament Voltage : 17.5V Filament current : 20.9A Solenoid currents : 9.5A each Ion pump current : <1uA Cooling water : 4 m 3 /hr. Mod. Anode setting : 67% DC voltage setting : 10.45kV RF synth. Level: -18.5dBm RF input to klystron: ~40W RF freq. : 352.2MHz RF output pk: ~1.25MW Figure : C1: Cathode voltage pulse@96kV pk, C2: Cathode current pulse @21A pk Math : RF output @ 1.25MW pk Klystron TH2089B test

27 Control interface for Solid State Bouncer Modulator Ni LabVIEW

28

29 SCRF cavity characterization

30 Frequency measurements Measurement of frequency of half cell assembly Frequency Measurement set up Half cell assembly Frequency (MHz) Nb-1251292.531 Nb-1271294.1969 After Equator Welding frequency (MHz) 300K Quality factor 300 K Cell ID # Nb-125 + Nb- 127 1296.929076 Measurement of frequency of complete Single cell

31 Resonant frequency and Quality factor measurements Frequency TE1CAT001 TE1CAT002 FNAL (23 C) 1297.031 1296.793 RRCAT (27 C) 1296.926 1296.675 'Q' factor FNAL (23 C) 9961 9918 RRCAT (27 C) 9076 9328 Characterization of prototype SCRF cavities.. @ RRCAT @ FNAL

32 Automated Test Setup Facility Development at PHPMS PHPMS Section has developed Automated Test Setups These Computer control Automatic test setups will be used for microwave measurement and characterization of accelerating structure and passive microwave components. GUI/control/DATA logging software were developed in NI LabVIEW

33 Vertical Test Stand

34 A Brief Overview of the VTS Vertical Test Stand is required to test and qualify 1.3GHz/650MHz, SCRF Cavities. India in collaboration with FNAL is developing a VTS (VTS-2) at RRCAT Indore. The design of VTS is based on the cavity test stand used by Jefferson Lab (JLAB), the same design has been implemented in FNAL for development of VTS-1 The design used by Jefferson is extremely modular and relies on off the shelf components. Complete VTS system is controlled by PXI Platform and National Instruments Labview software. SW for DAQ/Control and analysis will be based on software already developed in JLAB. Fermilab will provide technical support for development of VTS-2.

35 Purpose of VTS... To Quantify cavity performance Measure Q 0 vs Temperature -Variation in Q 0 with variation in liquid helium temperature. Measure Q 0 vs E -Variation in Q 0 with variation in Electric Field (measured by Field Probe) Measure Field Emission (radiation) -Using radiation monitors Investigate effect of low temperature externally performed bakeout on Q-drop

36 Basic Requirements of VTS RF System Provide Stable RF power to cavity with control over amplitude frequency and relative phase. Measure CW incident, Reflected and transmitted power to the cavity ( including HOM Output from HOM couplers if provided) Measure the radiation produced due to field emission or multipacting. Measure the cavity frequency and other test condition variables Provide safety interlock for personnel Provide automated data acquisition and control Calculate cavity parameters (E, Q ) from power measurement.

37

38

39 The system is comprised of following functional modules: RF Source/VCO/PLL Transmitted Power Network Power Measurement High Power Amp/Switching Network Diode Detector interface/Buffer Amplifier Each module can be assembled, optimized, and tested separately. System Functional Description

40 VTS @ FNAL VTS RF and Control @ FNAL 9 Cell cavity assembly for VTS @ FNAL

41 Component Sp.Model/MakeNo.Status VNAE5070B01Available Power MeterAgilent E4418B02Under Procurement Power MeterAgilent E4419B02Under Procurement Power Meter Sensor Head 8482AAgilent05Under Procurement Power Meter Sensor Head 9301A Agilent03Under Procurement RF GeneratorAgilent E4422B01Under Procurement Frequency CounterAgilent 53132A01Under Procurement DSOTecktronic 3024B01Available Crystal DetectorAgilent 8472B06Under Procurement Resources needed and their status Instruments..

42 Component SpModel/makeNo.Status PXI controllerNI PXI 8196 with 2GB RAM 01Available PXI CrateNI1042Q01Available NI LabviewNI LabView 8.201Available PXI 6229 DAQ CARDNI PXI 622901Under Procurement Connector Block and Cable for 6229 NI02Under Procurement RM Kit01Under Procurement Display, key board mouse Available Resources needed and their status DAQ..

43 Component Sp.Model/MakeNo.Status RF Amplifier 500WOPHIR 515601Under Development Directional Coupler500W Narda 3022-2001Under Procurement Load500W Bird01Available Circulator High Power UTE makeCT2574N01Under Procurement 1 Watt AmplifierMinicircuits ZHL-4201Under Procurement High Power SPDT Switches Dowkey 402A-280132A03Under Procurement Vector modulatorGT Microwave M2v-32A-5HD01Under Procurement MixerMiteq01Under Procurement Variable RF attenuator HMC302501Under Procurement. Resources needed and their status Active passive components..

44 Component Sp.Model/MakeNo.Status Phase shifter01Under Procurement Low power isolator~10Under Procurement Low power directional coupler~ 15Under Procurement D.C Block~10Under Procurement Low power amplifierMinicircuits05Under Procurement Cables/Connectors/adaptor/ Miscellous components Available D.C. Power supplies Available Resources needed and their status Active passive components..

45 Conclusion.. Further details needed on the fabrication of PCBs (circuit diagram, PCB files, component details, source code and other details for boards). The software for VTS RF controls does not contain all necessary subroutines, we are interacting through respective coordinators to get these information. FNAL is helping in getting the missing information. FNAL will be providing support in commissioning the VTS RF at RRCAT. Indian colleagues were provided information on the VTS

46 Thank you for kind attention


Download ppt "RF Power for VTS & HTS Purushottam Shrivastava, P. Mohania, D. Baxy, V. Rajput PHPMS Raja Ramanna Centre for Advanced Technology, Indore October 28, 2010."

Similar presentations


Ads by Google