1. Chapter 7 Coulomb Blockade and the Single-electron Transistor Lecture given by Qiliang Li

2. 7.2 Single-Electron Transistor Adding gate control on a Coulomb-Blockade structure – single-electron tunneling transistor or simply single-electron transistor (SET) Vg > 0 will depress the Fermi level, Ef Vg < 0 will raise Ef Above, below and lie up with Ef of right/left side

4. The net charge on the island:

5. Solved:

6. An electron tunnel into the island from b, the change of stored energy is

7. Similarly for an electron from island to Junction a:

8. Assume initially island is charge neutral (n=0), an electron tunnels into the island through junction b

9. Now the island is has one electron (n=1), the electron tunnels off from the island into junction a:

10. To observe a current from junction b to a, both condition need to be met: Current > 0

11. Coulomb diamonds Charge stability diagram Shaded regions: no tunneling is allowed

13. SET has potential for high-speed, high-density and low-power dissipation.

14. 7.3 Other SET and FET structures Carbon nanotube FET

15. InP nanowire FET for single electron tunneling

18. Benzene Molecule as a resonant tunneling transistor

19. Molecular SET