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Huawei ES3000 V2 PCIe SSD Card Competitive Positioning
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1 2 3 4 Contents Click to add Title ES3000 V2 PCIe SSD Card Highlights
ES3000 V2 PCIe SSD Card HTB 3 SSD Application Solutions in the Industry 4 Huawei ES3000 Application Solutions
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ES3000 V2 Specifications Appearance
Item Full-Height, Half-Length Card Half-Height, Half-Length Card Available capacity (GB) 1200 2400 3200 600 800 1600 Flash memory chip Micron 20 nm, Toshiba 19/A19 nm MLC Maximum read bandwidth (GB/s) 3.1 1.55 Read IOPS (Stable value, 4 KB, 100% random) 770K 390K 395K Read latency (Minimum value, 4 KB, 100% random) 31 μs Read latency (Average value, 4 KB, 100% random) 103 μs Maximum write bandwidth (GB/s) 1.46 2.05 2.2 0.73 0.9 1 1.1 Write IOPS (Maximum value, 4 KB, 100% random) 360K 480K 540K 180K 225K 240K 270K Write IOPS (Stable value, 4 KB, 100% random) 150K 220K 230K 75K 90K 110K 115K Minimum write latency 9 μs Average write latency 15.5 μs Full-height, half-length card Half-height, half-length card Advantages High performance: boasts industry-leading I/O performance, long-term stability, and highest performance in application scenarios, such as MySQL. High reliability: provides end-to-end data protection and double verification using CRC and ECC. Flexible RAID 5 and power failure protection deliver comprehensive exception prevention. Easy to install: supports preinstallation on Huawei servers before delivery, reducing deployment and transportation costs.
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ES3000 V2 Features Intelligent Controller Power Failure Protection
Uses Xilinx K7 series FPGAs, provides mature applications and stable quality. The built-in soft failure protection engine prevents instability and data error from cosmic rays. Adopts the device-based architecture and provides FTL and cache modules, occupying no host resource. Provides multiple built-in intelligent SSD algorithm engines, ensuring optimal performance and reliability. Uses high-reliability aluminum electrolytic capacitor to provide power failure protection for 5 years. Provides an exclusive high-precision monitoring module to monitor the energy storage capacitor status, such as temperature, voltage, and leakage current. Checks capacity and ESR periodically (monthly) to identify potential failures in advance. Enterprise-level Flash Memory Chip Preinstallation on Huawei Servers Uses the enterprise-level MLC memory chips to provide optimal performance and prolong the service life. Dynamic RAID 5 among memory chips provides single-chip failure protection. Storage space redundancy rate is higher than 28%, ensuring server performance and service time. Uses the following designs to enable prefabrication on Huawei servers before delivery: BGA chip pad hardening design Stress distribution design (component spacing and layout) Integrated heat sink hardening design Verified by Huawei stress stimulation test, dye & pry test, and multi-round drop tests.
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Highlight 1: 10-Year R&D Experience
Huawei was the first vendor to develop PCIe SSD cards in China (from 2005). Its PCIe SSD cards have been widely used in China Mobile, China Telecom, multiple government and financial organizations, and Internet companies, such as Tencent and Baidu. A large quantity of Huawei PCIe SSD cards have also been delivered to high-end markets in Japan and West Europe. The total capacity of the shipment in 2014 reached 10 PB. Internet …… Telecom Financial Education Government Media Enterprise Nanjing Land Resources Bureau Marine Bureau, Ministry of Communications Sichuan Provincial Government Yunnan E-Government Network 2005 2008 2009 2011 2012 2014 2015 2nd Gen 50/34 nm 512 GB/1 TB MLC 3rd Gen ES2000, 34/25 nm 640 GB, MLC 4th Gen ES3000, 25 nm 400 GB–2.4 TB MLC 5th Gen ES3000 V2, 20/1X nm 600 GB–3.2 TB 6th Gen ES3000 V3 ASIC Planning Start 1st Gen 128 GB/256 GB SLC
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Highlight 2: MT Algorithm Enables Optimal Read and Write Performance
Moving Together (MT) algorithm: enables read and write commands to be evenly distributed to flash memory chips. Each flash memory chip executes read and write commands simultaneously, maximizing read and write bandwidths and read IOPS. Multi-engine, high-bandwidth decoders and encoders Superior scheduling mechanism enables concurrent processing on memory chips, making full use of the flash bandwidth. ONFI 3.0/Toggle 2.0 high-speed interfaces Controller PCIe 2.0 x8 Controller PCIe 2.0 x8 Let's Moving Together ECC ECC NAND flash I/F NAND flash I/F …… …… …… …… Flash Flash x17 Flash Flash Flash Flash x17 Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash Flash
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Highlight 3: Dynamic RAID Engine Compensates for Single Chip Failure
Huawei proprietary dynamic RAID technology: When a flash memory chip fails, a dynamic RAID engine restores data (16+1), removes the faulty memory chip, and rebuilds RAID 5 (15+1) on the available flash memory space, ensuring normal running of the ES3000. Chan0 Chan1 Chan2 …… C(n-1) C n Chan P Chan0 Chan1 Chan2 …… C (n-1) Chan P LPA LPA LPA LPA LPA LPA P0 LPA LPA LPA LPA LPA P0 LPA LPA LPA LPA LPA LPA P1 LPA LPA LPA LPA LPA P1 LPA LPA LPA LPA LPA LPA P2 LPA LPA LPA LPA LPA P2 LPA LPA LPA LPA LPA LPA P3 LPA LPA LPA LPA LPA P3 RAID in the Industry The RAID engine in the industry restores the faulty channel data (N+1). As the RAID engine rebuilds a RAID group only in N+1 mode, data cannot be written into the SSD card. The SSD card cannot work properly and needs to be replaced immediately. Huawei Proprietary Dynamic RAID The Huawei RAID engine restores the faulty channel data (N+1). The RAID engine rebuilds a RAID group in [(N-1)+1] mode and writes data back into the flash memory. The SSD card works properly and reports information about the faulty memory chip.
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Highlight 4: Active PMI Eliminates Hidden Risks
Huawei SSD controller periodically scans data to check for data flipping. When the number of inverting bits reaches the threshold, garbage collection is triggered to move data to a reliable space before an error occurs. A flash memory chip stores data by storing electrons in floating-gate MOS transistors. The electrons overflow slowly with time, that is, bit flipping continuously occurs in the flash memory chip data. Not all data stored in SSD cards is frequently accessed or updated. The number of inverting bits occurring on infrequently accessed data may exceed the error correction capability of SSD controllers, causing data loss or data errors. The Huawei SSD controller scans all disk data periodically. When detecting that the number of inverting bits reaches the threshold, the SSD controller moves or updates the data to prevent data loss or error.
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Highlight 5: Comprehensive Data Protection
Huawei PCIe SSD cards use CRC and ECC to provide end-to-end data protection and double verification. For Huawei PCIe SSD cards, CRC is performed when data is transferred from the host to an SSD controller interface. This ensures reliability of data storage and transmission among modules and engines in SSD cards. For other SSD cards, ECC is performed only when data is written to a flash memory chip. As a result, data errors occur in controllers, DDRs, and device interfaces cannot be identified. Any error correction algorithm may have a blind area (for example, verification algorithms fail to identify special errors of certain special code, or the calculated verification code is the same as the original one even if data flipping occurs.), although the probability is very low. Huawei uses CRC and ECC to perform dual verifications, ensuring data correctness. Controller Flash DDR Data CRC ECC
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1 2 3 4 Contents Click to add Title ES3000 V2 PCIe SSD Card Highlights
ES3000 V2 PCIe SSD Card HTB 3 SSD Application Solutions in the Industry 4 Huawei ES3000 Application Solutions
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ES3000 V2 RFP Specification Guide
Item Application Scenario ES3000 V2 Competitive Products Reliability (data verification protection) vs. Chinese vendors Uses CRC and ECC to provide end-to-end data protection and double verifications. Provide data verification only in flash memory chips using ECC. Data errors may occur in controllers, DDRs, and interfaces. Reliability (flash memory chip failure protection) vs. all vendors If a single memory chip fails, the Huawei proprietary dynamic RAID algorithm restores data and automatically rebuilds a RAID group, to ensure normal operation of the card. Provide common RAID algorithms, which restore data if a single memory chip fails, but the card cannot be used. Random write performance vs. vendors except for Intel, Shannon, and Memblaze Provides high random write IOPS and low write latency. PCIe SSD cards are used to accelerate databases and virtualization, of which service performance is affected by random write IOPS and latency. Provide low random write IOPS and poor customer service performance. Random read performance vs. Fusion-io Provides high random read IOPS. Provide low random read IOPS. Capacity redundancy vs. Memblaze The ES3000 V2 provides larger physical capacity than competitive cards if the available capacity is the same. Large redundant space prolongs the service life and minimizes performance deterioration. DFx (preinstallation on Huawei servers before delivery) Supports preinstallation on Huawei servers before delivery. For details about Huawei server models, see Compatibility List. This feature is not implemented. Power-off protection Provides comprehensive power-off protection. In most cases, services can be recovered within 12 minutes. As FTL entries are stored on the host, data on Fusion-io PCIe SSD cards needs to be fully restored when a power failure occurs. The restoration time is over 40 minutes.
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Comparison of 600 GB PCIe SSD Cards
Item Huawei ES3000 V2 WD-Virident FlashMAX II Micron P420m MemBlaze PBlaze3L MLC HP PCIe Accelerator ME Flash memory chip MLC 25nm MLC Capacity (GB) 600 550 700 600–1200 Form factor HH-HL PCIe interface Gen 2 x8 Max read bandwidth(Gbit/s) 1.55 1.6 3.3 2.4 Max read IOPS (4 KB) 390,000 175,000 750,000 615,000 120,000 Min read latency (µs) 31 (Min) 103 (Typical) 76 100 80 110 Max write bandwidth (Gbit/s) 0.73 0.55 0.6 1.1 0.57 Max write IOPS (4 KB) 180,000 (Max) 75,000 (stable) 50,000 130,000 53,000 Min write latency (µs) 9 16 13 14 15 Max power consumption(W) 21 - 30 10–25 Service life 3 DWPD 5 year 3 DWPD 3 year 5 PB Comparison analysis Advantages N/A Disadvantages Low random read and write performance The WD-Virident FlashMAX II was launched early with non-mainstream flash chip techniques, causing high costs and supply risks. Only 3-year warranty Suggestions for bidding control Random read and write performance Service life and warranty period High read bandwidth and IOPS Low write performance Non-mainstream 25 nm flash chip technique with high costs and supply risks Write performance Random write performance is more important for actual services (for example, databases). Read bandwidth is not so important. High claimed read and write performance (The nominal capacity is 600 GB to 1200 GB, and the 600 GB card may not provide the claimed specifications.) High accuracy requirements for modular design. Multiple physical connections have reliability risks. Redundancy: The physical capacity of MemBlaze PBlaze3L MLC is 768 GB and that of the ES3000 V2 is 832 GB. Large redundancy space reduces the write amplification coefficient and ensures smooth performance. If a single controller meets the claimed specifications, it causes high power consumption. The Micron P420m is the OEM counterpart to the HP PCIe Accelerator ME. For details, see the analysis of Micron P420m.
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600 GB Competitive Product Analysis
MemBlaze PBlaze3L MLC Micron P420m HP PCIe Accelerator ME The claimed capacity is 600 GB to 1200 GB, but whether the 600 GB card can deliver the nominal performance is uncertain. Advantage High performance (if the 600 GB card can deliver the nominal performance) Disadvantage This card provides 768 GB physical capacity, which is lower than the physical capacity (832 GB) provided by the ES3000 V2. High power consumption of FPGA controllers. (If the performance of an FPGA controller meets the claimed specifications, its power consumption should be high. To improve heat dissipation, Tencent equipment rooms make the size of heat sinks into full height.) Complicated structure provides low reliability. The ES3000 V2 with Toshiba chips can rule out the Memblaze PBlaze3L MLC because of lower read latency. WD-Virident FlashMAX II They are the same product made by Micron. Use Micron 25 nm MLC memory chips. The read performance is high but insignificant to databases. (Database acceleration applications focus on read and write latency and write IOPS, but not the read bandwidth.) Advantage Use flash memory chips developed by Micron. Disadvantage Supply and maintenance risks: The 25 nm flash chip fabrication technique is out of date, causing high supply and maintenance risks. Poor write performance, especially low random write IOPS Has no advantage in read or write performance. The WD-Virident FlashMAX II is released early, using a non-mainstream technique, and the capacity of the WD-Virident FlashMAX III is no less than 1 TB. HP PCIe Accelerator HE Micron P320h They are the same product launched early, using Micron SLC memory chips, whose technique lags behind that of mainstream chips in the industry.
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Comparison of 800 GB PCIe SSD Cards (1/2)
Item HW ES3000 V2 FIO ioDrive2 FIO ioScale2 Intel SSD DC P3600 Intel SSD DC P3700 MemBlaze PBlaze3L MLC Flash memory chip MLC Capacity (GB) 800 785 825 600–1200 Form factor HH-HL PCIe interface Gen 2 x8 Gen 2 x4 Gen 3 x4 Max read bandwidth(Gbit/s) 1.55 1.5 1.4 2.6 2.8 2.4 Max read IOPS (4 KB) 390,000 215,000 130,000 430,000 460,000 615,000 Min read latency (µs) 31 68 77 20 80 Max write bandwidth (Gbit/s) 0.9 1.1 1 1.9 Max write IOPS (4 KB) 225,000 (Max) 90,000 (stable) 230,000 235,000 50,000 90,000 Min write latency (µs) 9 15 19 14 Max power consumption (W) 25 18 10–25 Comparison analysis Advantages High write performance (According to evaluation from StorageReview, the stable IOPS measured is lower than half of the claimed value.) Disadvantages Low random read IOPS High supply and maintenance risks because the 2x nm flash memory chips used are almost not in production The measured write performance is lower than what is claimed. Suggestions for bidding control Random read performance Service life High read performance Low random write performance (Write IOPS and latency are key factors of performance for database applications.) Random write performance (IOPS and latency) This card provides the prefetch function, which automatically reads data on consecutive pages. However, if the next IO command is not on the following pages, this function is unavailable. Long service life Low random write performance (The actual write IOPS should be lower than claimed value.) High price For details, see Comparison of 600 GB PCIe SSD Cards. (The physical capacity of MemBlaze PBlaze3L MLC 800 GB is 1024 GB, and that of the ES3000 V2 is 1088 GB.)
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Comparison of 800 GB PCIe SSD Cards (2/2)
Item HW ES3000 V2 WD-STEC s1122 Toshiba-OCZ Z-Drive 4500 Micron P420m Shannon Direct-IO SSD Flash memory chip MLC 19nm Toshiba MLC Capacity (GB) 800 700 Form factor HH-HL FH-HL PCIe interface Gen 2 x8 Gen 2 x4 Max read bandwidth (Gbit/s) 1.55 1.4 2.9 3 Max read IOPS (4 KB) 390,000 81,000 252,000 750,000 300,000 Min read latency (µs) 31 - 100 67 Max write bandwidth (Gbit/s) 0.9 1.1 2.2 0.6 1.2 Max write IOPS (4 KB) 225,000 (Max) 90,000 (stable) 49,000 76,000 50,000 310,000 Min write latency (µs) 9 18 13 Max power consumption (W) 25 20.8 30 6–25 Comparison analysis Western Digital acquired STEC, the SSD maker. Advantages Long service life (24 DWPD) Disadvantages Low random read and write IOPS (The nominal IOPS on the official website is 165,000/155,000, which is sequential write IOPS. For the detailed IOPS, see its User Guide.) Suggestions for bidding control Random read and write performance Persuades customers to focus on their requirements for service life. (Actual services cannot perform 24 DWPD.) High read and write bandwidth WXL cache software in Windows Virtualized optimization software VXL High error correction capability (55 bit/512 B) Low random read and write IOPS Short service life (680 TBW) Limited application due to its form factor (full-height, half-length) Service life and random read and write performance Dimensions (if required) Exclusive acceleration software causes vendor lock-in For details, see Comparison of 600 GB PCIe SSD Cards. High write bandwidth and random write IOPS Long service life The claimed read bandwidth and IOPS are lower than those of Huawei ES3000 V2 PCIe SSD cards. N/A
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Comparison of 1.2 TB PCIe SSD Cards (1/3)
Item HW ES3000 V2 HW ES3000 V2-H FIO ioDrive2 FIO ioMemory SX300 FIO ioMemory PX600 Intel SSD DC P3600 Flash memory chip MLC Capacity (TB) 1.2 1.25 1.3 Form factor HH-HL FH-HL PCIe interface Gen 2 x8 Gen 2 x4 Gen 3 x4 Max read bandwidth (Gbit/s) 1.55 3.1 1.5 2.6 2.7 Max read IOPS (4 KB) 395,000 770,000 245,000 196,000 (Measured 192,000) 235,000 450,000 Min read latency (µs) 31 68 92 20 Max write bandwidth (Gbit/s) 1 1.46 1.5 (Measured 0.9) 1.7 (1.6 if the max power consumption is lower than 25 W) Max write IOPS (4 KB) 240,000 (Max) 110,000 (stable) 360,000 (Max) 150,000 (stable) 250,000 330,000 (Measured 63,000) 370,000 50,000 Min write latency (µs) 9 15 Max power consumption (W) 23 42 25 21 22 Comparison analysis Advantages High write performance (According to evaluation from StorageReview, the IOPS after stability is about 117,000.) Disadvantages Low random read IOPS High supply and maintenance risks because the 2x nm flash memory chips used are almost not in production The measured write performance is lower than what is claimed. Suggestions for bidding control Random read performance Service life Low power consumption The random read IOPS is only half of that of the half-height ES3000 V2. The measured random write performance is much lower than the claimed value and that of the ES3000 V2. Random read IOPS The measured random write IOPS is lower that what is claimed. Long recovery time (40 minutes) after a power failure Low TRIM execution efficiency (5 minutes and 44 seconds after the data is randomly restored) High read and write bandwidth and IOPS of half-height Fusion ioMemory PX600s The actual specifications are lower than the claimed. For customers who have no requirements for card dimensions, use the full-height half-length ES3000 V2 to rule out the Fusion ioMemory PX600. The measured performance of Fusion-io cards is much lower than what is claimed. High read bandwidth and IOPS of half-height Intel SSD DC P3600s Low random write IOPS, which has a great impact on services Random write performance (Most PCIe SSD cards are used in databases, which required high random write IOPS.) For customers who demand high read IOPS and bandwidth, use the full-height and half-length high-performance ES3000 V2 to rule out the Intel SSD DC P3600.
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Comparison of 1.2 TB PCIe SSD Cards (2/3)
Item HW ES3000 V2 HW ES3000 V2-H WD-STEC s1122 WD-Virident FlashMAX II FlashMAX III Micron P420m Flash memory chip MLC Intel 2xnm MLC Capacity (TB) 1.2 1 1.1 1.4 Form factor HH-HL FH-HL PCIe interface Gen 2 x8 Gen 2 x4 Max read bandwidth (Gbit/s) 1.55 3.1 2.7 3 Max read IOPS (4 KB) 395,000 770,000 145,000 340,000 531,000 750,000 Min read latency (µs) 31 - 76 100 Max write bandwidth (Gbit/s) 1.46 0.63 Max write IOPS (4 KB) 240,000 (Max) 110,000 (stable) 360,000 (Max) 150,000 (stable) 110,000 59,000 95,000 Min write latency (µs) 9 18 22 (512 B) 13 Max power consumption (W) 23 42 25 30 Comparison analysis Advantages Long service life Disadvantages Low read and write performance Suggestions for bidding control Performance Non-mainstream capacity specifications (generally 1.2 TB) Inform customers that the card and actual services cannot perform 24 DWPD. Aging products with high supply risks High read and write performance of half-height WD-Virident FlashMAX IIs Non-mainstream flash memory chips with supply risks Only 3-year warranty Supply risks The performance of this card and ES3000 V2 in half height is almost the same. (The read bandwidth of this card is larger but insignificant to services.) Short warranty period (The mainstream warranty period is 5 years.) Non-mainstream capacity specifications The performance of the high-performance ES3000 V2 is comprehensively higher than that of the FlashMAX II. High read performance of half-height WD-Virident FlashMAX IIIs Low random write IOPS Moderate service life Random write IOPS, which has an impact on services. For customers who require high read IOPS and bandwidth, use the high-performance ES3000 V2 to rule out this card. Short service life (the general level is 3 DWPD or longer.) High read bandwidth and IOPS of half-height Micron P420ms Random write performance (Most PCIe SSD cards are used in databases, which require high random write IOPS.) For customers who demand high read IOPS and bandwidth, use the full-height and half-length high-performance ES3000 V2 to rule out the Micron P420m.
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Shannon Direct-IO SSD G2
Comparison of 1.2 TB PCIe SSD Cards (3/3) Item HW ES3000 V2 HW ES3000 V2-H MemBlaze PBlaze3L MLC MemBlaze PBlaze3H MLC Shannon Direct-IO SSD G2 HP PCIe Accelerator ME Flash memory chip MLC Capacity (TB) 1.2 0.6–1.2 1.2–2.4 1.4 Form factor HH-HL FH-HL PCIe interface Gen 2 x8 Max read bandwidth (Gbit/s) 1.55 3.1 2.4 3.2 2.0 3.3 Max read IOPS (4 KB) 395,000 770,000 615,000 (Measured 447,000) 750,000 450,000 120,000 Min read latency (µs) 31 80 67 110us Max write bandwidth (Gbit/s) 1 1.46 1.1 2.2 1.8 0.615 Max write IOPS (4 KB) 240,000 (Max) 110,000 (stable) 360,000 (Max) 150,000 (stable) 130,000 260,000 460,000 99,000 Min write latency (µs) 9 14 15000 Max power consumption (W) 23 42 10–25 30–55 6–25 - Comparison analysis Advantages High read and write performance of half-height MemBlaze PBlaze3L MLCs Disadvantages High power consumption and poor heat dissipation of FPGA controllers Suggestions for bidding control For scenarios without space limits, use the high-performance ES3000 V2 to rule out this card. High power consumption and poor heat dissipation of controllers High read and write performance N/A Low capacity redundancy. The physical capacity of the MemBlaze PBlaze3H MLC is 1536 GB and that of the ES3000 V2 is 1664 GB. Large redundancy space reduces the write amplification coefficient and ensures smooth performance. Not available due to limited information High read bandwidth Low random read IOPS Low write IOPS and bandwidth High costs and supply and maintenance risks due to out-of-date flash chip technique Write performance and random read performance Non-mainstream flash memory chips, costs, and supply risks
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Comparison of 1.6 TB PCIe SSD Cards (1/2)
Item HW ES3000 V2 FIO ioScale 2 FIO ioMemory SX300 Intel SSD DC P3600 Intel SSD DC P3700 Flash memory chip MLC Capacity (TB) 1.6 1.65 Form factor HH-HL PCIe interface Gen 2 x8 Gen 2 x4 Gen 3 x4 Max read bandwidth (Gbit/s) 1.55 1.4 2.6 2.8 Max read IOPS (4 KB) 395,000 130,000 195,000 450,000 Min read latency (µs) 31 77 92 20 Max write bandwidth (Gbit/s) 1.1 1.9 Max write IOPS (4 KB) 270,000 (Max) 115,000 (stable) 235,000 285,000 56,000 150,000 Min write latency (µs) 9 19 15 Max power consumption (W) 25 21 22 Comparison analysis Advantages High random write performance Disadvantages Low random read IOPS Non-mainstream flash chip technique, high costs, and high supply and maintenance risks. Suggestions for bidding control Low random read performance Flash chip costs and supply risks High claimed random write performance Low measured random write performance (Consider that the measured IOPS of Fusion ioMemory SX TB is 63,000.) Actual random write performance Long recovery time (40 minutes) after a power failure Low TRIM execution efficiency High read bandwidth High write bandwidth of half-height Intel SSD DC P3600s Low random write IOPS Random write performance, which is significant to services, such as databases High write bandwidth of half-height Intel SSD DC P3700s High price Use the high-performance ES3000 V2 to rule out the Intel SSD DC P3700.
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Comparison of 1.6 TB PCIe SSD Cards (2/2)
Item HW ES3000 V2 Toshiba-OCZ Z-Drive 4500 MemBlaze PBlaze3H MLC Shannon Direct-IO SSD Flash memory chip MLC Capacity (TB) 1.6 1.2–2.4 Form factor HH-HL FH-HL PCIe interface Gen 2 x8 Max read bandwidth (Gbit/s) 1.55 2.9 3.2 2.4 Max read IOPS (4 KB) 395,000 252,000 750,000 590,000 Min read latency (µs) 31 - 80 67 Max write bandwidth (Gbit/s) 1.1 2.2 1.8 Max write IOPS (4 KB) 270,000 (Max) 115,000 (stable) 76,000 260,000 480,000 Min write latency (µs) 9 14 Max power consumption (W) 25 23.1 30–55 8–25 Comparison analysis Advantages High read and write bandwidths WXL cache software in Windows Virtualized optimization software VXL Disadvantages Low read and write IOPS Short service life (1.3 PB) Full-height and half-length with limited applications Suggestions for bidding control Service life and random read and write performance No half-height half-length form Exclusive acceleration software causes vendor lock-in. High claimed read and write performance (The nominal capacity is 1.2 TB to 2.4 TB, and the 1.6 TB card may be not provide the claimed specifications.) High accuracy requirements for modular design. Multiple physical connections have reliability risks Redundancy: The physical capacity of MemBlaze PBlaze3H MLC is 2048 GB and that of the ES3000 V2 is 2176 GB. Large redundancy space reduces the write amplification coefficient and ensures smooth performance. The controller meeting the claimed specifications provides poor heat dissipation and causes high power consumption. Provides no half-height half-length cards. The application is limited. High claimed read and write performance Only in full height Read performance lower than that of the high-performance ES3000 V2 Read performance (compared with that of the high-performance ES3000 V2)
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Comparison of 2.4 TB PCIe SSD Cards (1/2)
Item HW ES3000 V2-H FIO ioDrive2 Duo FIO ioMemory PX600 Intel SSD DC P3600 Intel SSD DC P3700 Flash memory chip MLC Capacity (TB) 2.4 2.6 2 Form factor FH-HL HH-HL PCIe interface Gen 2 x8 Gen 3 x4 Max read bandwidth (Gbit/s) 3.1 3 2.7 2.8 Max read IOPS (4 KB) 770,000 480,000 350,000 450,000 Min read latency (µs) 31 68 92 20 Max write bandwidth (Gbit/s) 2.05 2.5 2.2 1.7 2.0 Max write IOPS (4 KB) 480,000 (Max) 220,000 (stable) 490,000 385,000 56,000 175,000 Min write latency (µs) 9 15 Max power consumption (W) 50 55 25 Comparison analysis Advantages High write performance (According to evaluation from StorageReview for the ioDrive 1.2 TB card, the measured values are about half of the claimed values.) Disadvantages Low random read IOPS High supply and maintenance risks because the 2x nm flash memory chips used are almost not in production The actual write performance is lower than what is claimed. Suggestions for bidding control Random read performance Service life High write performance (The measured IOPS of 1.3 TB cards is smaller than 1/4 of the claimed value.) Space-saving (half height and half length) Low power consumption Persuades customers to test the random write performance Long recovery time (40 minutes) after a power failure Low TRIM execution efficiency Small size (half height and half length) Low read latency Long service life of P3700s Performance: low random read and write IOPS, especially for P3600 series cards High price (P3700 series) Non-mainstream capacity specifications (generally 2.4 TB) Random read and write performance Price Capacity specifications
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Comparison of 2.4 TB PCIe SSD Cards (2/2)
Item HW ES3000 V2-H WD-STEC s1122 WD-Virident FlashMAX II FlashMAX III MemBlaze PBlaze3H MLC Flash memory chip MLC Capacity (TB) 2.4 2 2.2 1.2–2.4 Form factor FH-HL HH-HL PCIe interface Gen 2 x8 Gen 2 x4 Max read bandwidth (Gbit/s) 3.1 1.5 2.7 3.2 Max read IOPS (4 KB) 770,000 79,000 340,000 531,000 750,000 Min read latency (µs) 31 - 76 80 Max write bandwidth (Gbit/s) 2.05 1.0 1 1.4 Max write IOPS (4 KB) 480,000 (Max) 220,000 (stable) 28,000 110,000 59,000 260,000 Min write latency (µs) 9 33 18 22 14 Max power consumption (W) 50 25 30–55 Comparison analysis Advantages Long service life Disadvantages Low performance Non-mainstream capacity specifications Aging products and non-mainstream NAND flash memory chip Suggestions for bidding control Performance Capacity specifications NAND flash memory chip supply risks The actual service life is much shorter than what is claimed. Space-saving (half height and half length) Non-mainstream flash memory chips with supply risks Only 3-year warranty Supply risks Short warranty period (The mainstream warranty period is 5 years.) Short service life (generally 3DWPD) Service life High claimed performance specifications Low capacity redundancy Low capacity redundancy: The physical capacity of the MemBlaze PBlaze3H MLC is 3072 GB and that of the ES3000 V2 is 3328 GB. Large redundancy improves reliability, ensures smooth performance, and decreases performance deterioration.
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WD-Virident-FlashMAX II Shannon Direct-IO SSD G2
Comparison of 3.2 TB PCIe SSD Cards Item HW ES3000 V2-H FIO ioScale 2 FIO ioMemory SX300 WD-Virident-FlashMAX II Toshiba-OCZ Z-Drive 4500 Shannon Direct-IO SSD G2 Flash memory chip MLC Capacity (TB) 3.2 4.8 Form factor FH-HL HH-HL PCIe interface Gen 2 x8 Gen 2 x4 Max read bandwidth (Gbit/s) 3.1 1.5 2.6 2.9 Max read IOPS (4 KB) 770,000 115,000 215,000 230,000 252,000 590,000 Min read latency (µs) 31 92 95 - 70 Max write bandwidth (Gbit/s) 2.2 1.3 1.2 0.9 2.0 Max write IOPS (4 KB) 540,000 (Max) 230,000 (stable) 243,000 300,000 75,000 76,000 480,000 Min write latency (µs) 9 19 15 Max power consumption 55 W 25 W 21 W 22.8 W 40 PB Comparison analysis Advantages High random write performance Low power consumption Disadvantages Low IOPS and read and write bandwidth Non-mainstream flash chip technique, high costs, and high supply and maintenance risks Suggestions for bidding control Low read performance Flash chip costs and supply risks Based on test experience, the actual write performance is much lower than what is claimed, which can be used to rule out the Fusion ioScale 2. Small size (half height and half length) Low write bandwidth and read IOPS Low random read performance Low write bandwidth Based on test experience, the actual write performance is much lower than what is claimed, which can be used to rule out the Fusion ioMemory SX300. Long recovery time after a power failure (40 minutes) Low TRIM execution efficiency Low performance Non-mainstream flash memory chips with supply risks Performance Product supply risks WXL cache software in Windows Virtualized optimization software VXL Low random read and write performance (IOPS) Short service life Service life and random read and write performance Exclusive acceleration software High random write IOPS False labeled performance specifications (The current specifications on the official website is low, which will be updated later.) Persuades customers to test performance specifications.
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Competitor Analysis — Fusion-io
Overview The knockout products Atomic PX600 and Atomic SX300 were launched in June The PX600 series features long service life. Advantages Well-known brand Except for the ES3000 V2 2.4 TB and 3.2 TB that are only in full-height form, other ES3000 V2s all have the half-height form. Low power consumption within 25 W (Only the half-height ES3000 V2 can control power consumption within 25 W.) Disadvantages With the same capacity specification, the read IOPS is lower than that of the ES3000 V2. The measured IOPS is lower than half of what is claimed, and the actual write IOPS is lower than that of the ES3000 V2. Advise customers to test the write IOPS. Low stability: The synchronous random write performance fluctuates dramatically. The ES3000 V2 provides higher stability. (Performance stability is significant to database applications.) The two cards require long recovery time (40 minutes or longer) after a power failure. The ES3000 V2 restores data from an unexpected power-off within 12 minutes in most cases or 24 minutes in the worst situation. Atomic PX600 Atomic SX300 Overview The Fusion ioDrive2 and ioDrive2 Duo, launched in 2012, use Intel Micron 2xnm memory chips and feature high performance. Advantages High performance Disadvantages The outdated flash memory chips used are almost not in production, causing high costs and supply and maintenance risks. Low random read performance (random read IOPS) According to evaluation from StorageReview, the measured write IOPS is much lower than what is claimed. Advise customers to test the write IOPS. IODrive2 IODrive2 Duo
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Fusion-io SX300 1.3 TB Test Result Analysis — Standard Performance
Huawei ES3000 V2 1.2 TB Claimed Specifications Measured Specifications Measured Specifications of the Full-height 1.2 TB Measured Specifications of the Half-height 1.2 TB Sequential write bandwidth (Mbit/s) 1500 965 1390.6 1022.8 Sequential read bandwidth (Mbit/s) 2700 2555.7 3046.6 1547.5 Random read IOPS (4 KB) 196,000 192,415 702,162 394,848 Random write IOPS (4 KB) 330,000 63,927 149,401 109,073 Read performance Read bandwidth: The measured value of the Fusion-io SX TB is about 2.5 Gbit/s, lower than that of the full-height ES3000 V2 1.2 TB (about 3 Gbit/s) and higher than that of the half-height ES3000 V2 1.2 TB (about 1.5 Gbit/s). If customers demand high sequential write bandwidth (such as CDN), use the full-height ES3000 V2 to rule out the Fusion-io SX TB. Sequential write bandwidth is not important for databases and virtualization applications. Emphasize the importance of the random read IOPS to customers. Random read IOPS: The random read IOPS of the Fusion-io SX TB is about 1/4 of that of the full-height ES3000 V2 and 1/2 of that of the half-height ES3000 V2. Higher random read IOPS means higher application performance. This indicator is a weak point of the Fusion-io SX TB. Write performance Write bandwidth: The claimed value is higher than that of the ES3000 V2, but the measured value is lower than that of the ES3000 V2. Random write IOPS: As the measured value is only about 1/5 of the claimed one, it is estimated that this indicator is measured during the first several minutes when the disk is zero-loaded. The measured random write IOPS of the ES3000 V2 is much higher than that of the Fusion-io SX TB.
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Fusion-io SX300 1.3 TB Test Result Analysis — Performance Stability
According to the test results, the synchronous random write performance of the Fusion-io SX TB fluctuates dramatically. Synchronous random write performance is important to the database and distributed file system Name Node data update scenarios. The performance fluctuation affects service performance. For example, database TPCC fluctuation may cause frame freezing when terminal users access the online banking service.
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Suggestion for bidding control
Competitor Analysis — Intel Background Intel provides P3600 and P3700 series PCIe SSD cards. The P3700 series provides long service life. The PCIe SSD cards use Intel homegrown ASIC controller and the device-based architecture, providing high integration and low power consumption. The half-height, half-length Intel PCIe SSD cards provide 400 GB to 2 TB memory capacity and support 2.5-inch disks. Intel and Micron have joint flash chip production lines. Advantage High performance Competitive flash chip cost due to the joint flash chip production lines These cards provide the SFF8639 interface-based 2.5-inch disk form. Disadvantage If the cards meet the claimed specifications, the power consumption is more than 25 W. Suggestion for bidding control The write performance of P3600 series cards is lower than that of the ES3000 V2. The P3700 series cards are expensive.
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Suggestion for bidding control
Competitor Analysis — Memblaze Background Same as the ES3000 V2, Memblaze PCIe SSD cards use the controller FPGA and device-based architecture. The half-height half-length cards provide 600 GB to 1200 GB memory capacity, and the full-height half-length cards 1200 GB to 2400 GB memory capacity. Memblaze PCIe SSD cards use Toshiba NAND flash memory chips. Advantage Pianokey technology: Memblaze makes daughter cards using flash memory chips with different capacity and installs different types and quantity of daughter cards to implement different capacity of PCIe SSD cards, which is the biggest highlight of Memblaze SSD cards. Other unique technologies of Memblaze: Innovative architecture: Memblaze uses the device-based architecture, which does not occupy host resources and provides higher management efficiency. However, the ES3000 V2 uses the same architecture and other vendors use the host-based architecture, which provides flexible software and low power consumption. Reliability, data protection, and service life: The related technologies have been maturely used by the ES3000. Furthermore, the ES3000 has some unique advantages based on these technologies. Disadvantage High power consumption (Memblaze uses FPGA controllers and the device-based architecture. If an FPGA controller meets the claimed specifications, it causes high power consumption.) Suggestion for bidding control Hardware reliability: The pianokey technology results in many small modules of cards. Memblaze PCIe SSD cards use flexible PCB boards, high-density connectors, and multiple complex components, which increases connection points on the board and decreases reliability. The half-height half-length Memblaze PCIe SSD card provides high claimed performance specifications. However, there is only one FPGA controller on a card. The performance of an FPGA controller meeting the claimed specifications will cause high power consumption and poor heat dissipation. To improve heat dissipation, some customers have changed the size of heat sinks into full height.) No half-height 1.6 TB Memblaze PCIe SSD cards
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Suggestion for bidding control
OCZ (Toshiba) Z-Drive 4500 Background Toshiba purchased OCZ in the beginning of 2014. Z-Drive 4500 series product was launched in early March, 2014. The Z-Drive 4500 series uses Toshiba 19 nm memory chips and the LSI SandForce SF-2582 controllers. Advantage Memory chip High read and write bandwidth of 800 GB and 1600 GB cards WXL cache software in Windows Virtualized optimization software VXL Disadvantage Low random IOPS Short service life Z-Drive GB and 1.6 TB cards are all of full height and half length, which cannot be installed in the half-height PCIe slots. Suggestion for bidding control Key random performance for customer services lower than that of the ES3000 V2 No half-height Z-Drive GB and 1.6 TB cards Others The ES3000 V2 uses mainstream acceleration software. The exclusive WXL and VXL may cause vendor lock-in.
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1 2 3 4 Contents Click to add Title ES3000 V2 PCIe SSD Card Highlights
ES3000 V2 PCIe SSD Card HTB 3 SSD Application Solutions in the Industry 4 Huawei ES3000 Application Solutions
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SSD Acceleration Solutions from Hardware Vendors
New SSD camp has formed. Each SSD vendor has its own software solutions. Current status Provides only the CAS, which is not applicable to certain cluster scenarios. Intel has continuous but limited input in enterprise applications. Acquired cache software vendor NVELO, but there is no SSD promotion or distinct advantages in enterprise applications. Recently launched HGST Virident 2.0, which is used with its PCIe SSDs to support cluster applications. Western Digital has advantages in general HA solutions for physical environments. The FlashSoft cache software can be sold independently without binding hardware. SanDisk provides comprehensive cache solutions. Intel acquired NEVEX to develop the Cache Acceleration Software (CAS) Samsung acquired storage solutions firm NVELO. Western Digital acquired SSD maker STEC, including its cache software Enhance I/O, for $340 million. SanDisk purchased FlashSoft, a cache software vendor. SanDisk acquired Fusion-io for $1.1 billion Samsung purchased Proximal Data Western Digital bought PCIe flash storage technology developer Virident 2012.8 2013.6
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VMware SSD Acceleration Solution
Virtualization software vendors In the VMware virtualization infrastructure, vSphere Flash Read Cache (vFRC) takes precedence over other solutions, such as FVP. For details about the compatibility between SSDs from different vendors and the VMware platform, see the vFRC and VSAN compatibility lists on the VMware official website.
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SSD Acceleration Solutions from OS Vendors
Microsoft has incorporated the SSD Cache solution (called Tiered Storage) in Windows Server 2012 R2. With Tiered Storage, SSD can be configured as the cache, which is transparent to applications. Linux vendors, such as CentOS and Red Hat, has provided SSD Cache solution in their Logical Volume Manager and launched Alpha versions. Traditional OS vendors also provide methods for SSD enhancements.
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SSD Acceleration (Database) from Application Software Vendors
Database vendors SQL Server databases provide Buffer Pool Extension from This function allows SSDs to be used as the database cache to accelerate SQL Server database processing speed. Oracle database interacts with Oracle Enterprise Linux (OEL) to implement Smart Flash Cache, which accelerates Oracle database processing speed. Databases and open-source distributed storage systems already support the SSD acceleration solution. Analysis of SSD acceleration in distributed storage systems is not available at the present.
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Virtualization platform
Huawei ES3000 Solution Summary Application software The current ES3000 SSD solution focuses on seamless interaction with the application software, OS, and middleware. It uses Intel CAS. The problem to be solved is how to implement easy integration with other products. OS/ Virtualization platform Huawei made no investment in developing commercial cache software. Generally, SSD vendors acquire the related capabilities through mergers and acquisitions. At present, the most advanced cache solution for physical environments is HGST (purchased by Western Digital), and the most advanced solution for virtualization environments is Proximal Data FVP (acquired by Samsung). Hardware Try to apply the Huawei ES3000 solution to more mainstream application solutions. Try to provide more features for SSD. For example, Intel provides the RSTE, which enables two PCIe SSD cards to be mirrored. Try to provide more mechanisms to improve specific I/O model, for example, mechanism for improving random read speed to 4 KB or 8 KB databases.
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1 2 3 4 Contents Click to add Title ES3000 V2 PCIe SSD Card Highlights
ES3000 V2 PCIe SSD Card HTB 3 SSD Application Solutions in the Industry 4 Huawei ES3000 Application Solutions
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CAS Flash Cache Application Solution
Intel® CAS + Huawei ES3000 PCIe SSD cards No need to modify existing applications or storage solutions. Improves database performance by storing the hotspot data on the ES3000, reducing the long response time to read I/O in the Oracle database caused by poor storage performance. Supports Windows, Linux, and VMware running environments. If it is used in VMware environments, Intel CAS can be installed only on the Guest OS. Applies only to Oracle databases in standalone mode due to limitations of the CAS. Uses the commercial software – Intel Cache Acceleration Software (CAS). Oracle database Write operations Initial read operations Subsequent read operations Application layer OS kernel Intel® CAS Decision Support System Hardware layer Disks Cache (Huawei ES3000) 1*RH2288 V2, 2*Intel Xeon E V2, 2*15K RPM SAS HDD for OS, 1*Huawei ES3000 PCIE SSD 1.2 TB for cache, 6*10K RPM SAS HDD for Data, RHEL 6 update 5 x64, Orion 11.1 DSS Mode, performance improved by 150%.
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Smart Flash Cache Application Solution
Oracle Smart Flash Cache + Huawei ES3000 PCIe SSD cards Oracle Smart Flash Cache expands the SGA capacity to L2 cache on the SSD. The SSD stores only the clean data (data not modified by database applications) filtered by using the algorithm similar to LRU in SGA high-speed cache. Modified data is written into physical disks. Integrated with the Oracle database. Users do not need to pay for the cache function. Provides a read cache on servers, which is ideal for scenarios with mass read I/O requirements. Supports only Oracle Enterprise Linux and Solaris OS. Supports Oracle RAC. Memory Oracle SGA (System Global Area) Data moved to SSD Flash Cache Cache hit read Cache (Huawei ES3000) 1*RH2288 V2, 2*Intel Xeon E V2, 2*15K RPM SAS HDD for OS, 1*Huawei ES3000 PCIE SSD 1.2 TB, Oracle Enterprise Linux 6.5 x86_64, Swingbench Order Entry Mode (OLTP), Oracle Version 11gR Note: The data is measured based on a read operation ratio of 60%. The performance is improved by 100%. Physical disks/LUNs
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ES3000 Database Acceleration Application Solution (Oracle ASM)
Oracle ASM + Huawei ES3000 PCIe SSD cards Store Oracle database table space in Huawei ES3000 PCIe SSD cards instead of on external storage devices. Seamless integration between ASM and Oracle database eliminates extra expenses. Applies to standalone databases requiring high read and write concurrency and low latency. Oracle Automatic Storage Management (ASM) prevents single point of failure (SPOF) of the PCIe SSD cards, ensuring high availability. Provides optimal user experience and I/O latency in microseconds. ASM Mirrored disk group 1 ASM disk1 ASM disk2 30-fold ASM implements mirroring of the data stored in the two PCIe SSD cards to provide storage space for Oracle database with HA. The local disks on servers can be used to deploy the OS and store redo logs. 1*RH2288 V2, 2*Intel Xeon E V2, 2*15K RPM SAS HDD for OS, 1*Huawei ES3000 PCIE SSD 1.2 TB, Oracle Enterprise Linux 6.5 x86_64, Swingbench Order Entry Mode (OLTP), Oracle Version 11gR Note: The data is measured based on a read operation ratio of 60%. The performance is improved by 30 times.
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Transactions per second (TPS)
ES3000 for MySQL Databases Linux LVM + Huawei ES3000 PCIe SSD cards Limitations and Precautions Uses Huawei ES3000 PCIe SSD cards to store Oracle database table space, which greatly improves local storage performance of MySQL servers. LVM is a software solution provided with Linux. It causes CPU overhead when a large number of concurrent operations are performed. Therefore, assess the CPU resources before deployment. It is recommended that ES3000 be used with RHEL 6.5. The LVM in earlier Linux versions may not support mirroring. Linux Logical Volume Manager (LVM) implements mirroring of ES3000s, eliminating SPOF of SSD cards. Transactions per second (TPS) Response time (ms) File system /mnt/data Logical volumes /dev/datavg/mirror Volume group datavg Physical volumes hioa1 hiob1 sdb1 hioa1 hiob1 sdb1 Physical devices 1*RH2288 V2, 2*Intel Xeon E V2, 64 GB memory, 2*15K RPM SAS HDD for OS, 2*15K RPM SAS HDD for LVM log, 2*Huawei ES3000 v2 PCIE SSD 2.4 TB, Sysbench 0.5 (OLTP, 32 threads, Database siez ), Mysql Version Using ES3000 V2 improves the performance by 15 times. ES3000 ES3000 LVM Log
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ES3000 for Microsoft SQL Server
SQL Server Buffer Pool Extension + Huawei ES3000 PCIe SSD cards The buffer pool extension provided by SQL Server 2014 allows the ES3000 SSD cards to act as database L2 buffer pool, improving database performance. Configuration suggestions Set the buffer pool extension size to a value that is 32 times of the maximum physical memory size. 1*RH2288 V2, 2*Intel Xeon E V2, 64 GB memory, 2*15K RPM SAS HDD for OS. HDD only: 6*15K RPM SAS HDD RAID5 for DB Buffer Pool Extension: 128 GB SSD capacity All SSD: 2*Huawei ES3000 v2 PCIE SSD 2.4 TB for DB In HammerDB 2.16 version testing, the all SSD solution offers 9.6x higher performance than the HDD only solution. The use of buffer pool extension improves performance by 85%.
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ES3000 for VMware vFRC VMware vFRC + ES3000 V2 PCIe SSD cards
vSphere Flash Read Cache (vFRC) is a read cache solution supported by VMware vSphere infrastructure. vFRC is transparent to applications. VMware vFRC + ES3000 V2 PCIe SSD cards Supports VM-based cache policies Restrictions: If vFRC is used in a vSphere cluster, the number of SSDs is between 1 to 32. Each ESXi host can be configured with a maximum of 8 SSDs, with a maximum capacity of 4 TB. vFRC applies to vSphere 5.5 or later, and supports only reach cache at present. vFRC does not support fault tolerance. vFRC supports VMFS, NFS, and virtual raw device mapping (RDM), but does not support physical RDM. Applies to scenarios which involve a larger proportion of read I/O operations and hot data. PCIe SSD (Cache)
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ES3000 for VMware VSAN VSAN DataStore
VMware VSAN + ES3000 PCIe SSD cards VSAN is a software-defined storage product used in VMware virtualization environment. Based on the vSphere infrastructure, VSAN groups all local disks of servers into a shared storage pool for VMs. Each piece of data has multiple copies stored on the hard disks of different servers in a cluster, ensuring data availability. Each VSAN cluster supports 3 to 32 servers. In a cluster, each vSphere host must be configured with one SSD. The SSD provides its 70% capacity for the read cache and 30% capacity for the write cache. The VSAN SSD capacity cannot be less than 10% of the actual HDD usage. VSAN DataStore Each server supports a maximum of 5 disk groups. Each disk group has one SSD and 1 to 7 HDDs. Disk group Disk group Disk group Disk group Disk group PCIE SSD (Cache) HDDs Server VSAN network VSAN network VSAN network VSAN network VSAN network Note: The larger the SSD capacity, the higher the VSAN DataStore performance.
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Huawei SSD Solution Competition Analytical Map
Fusion-IO Intel Micron Dell IBM HP SanDisk Huawei Main memory Oracle, MySQL, SQL Server O File server Cache Database Oracle X MySQL SQL Server SAP HANA Virtualization VMware XenServer Hyper-V VDI Citrix XenDesktop VMware Horizon View Physical machine Direct Cache RAID card Tiering Distributed cache Oracle RAC Big Data NoSQL Database Software-defined storage VSAN Shared storage Storage acceleration gateway
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