橋本佑介 A,B 三野弘文 A 、山室智文 A 、蒲原俊樹 A 、神原大蔵 A 、松末俊夫 B Jigang Wang C 、 Chanjuan Sun C 、河野淳一郎 C 、嶽山正二郎 D 千葉大院自然 A 、千葉大工 B 、ライス大 ECE C 、東大物研 D Y. Hashimoto A,B H. Mino A, T. Yamamuro A, T. Kamohara A, D. Kanbara A, T. Matsusue B, J. Wang C, C. Sun C, J. Kono C, S. Takeyama D Graduate School of Science and Technology, Chiba Univ. A 、 Department of Engineering, Chiba Univ. B, ECE Dept., Rice Univ. C 、 ISSP, Univ. of Tokyo D 13aXD-14 High excitation effects in dilute magnetic semiconductor CdMnTe 希薄磁性半導体 CdMnTe における強励起効果
Magnetic Polarons Mn spin Exciton spin e h Free Exciton Magnetic Polaron (FEMP) Localization only by sp-d exchange interaction A Golnic, et. al. J. Phys. C16, 6073 (1983) M. Umehara, Phys. Rev. B 68, (2003) Photo-induced ferromagnetism via the FEMP
Free exciton magnetic polaron (FEMP) in CdMnTe High quality CdMnTe sample with low Mn concentration He-Ne laser 76 MHz Ti:Sapphire laser 250 kHz OPA laser 1 kHz OPA laser Exciton density – [cm-3] CW and Time-resolved Photoluminescence Current work : Alloy potential fluctuation : Small x = 5 ~ 10% → FEMP energy : Large S. Takeyama, J. of Crys. Growth, (1998) Mn Concentration [%] Localization energy 105 Alloy Potential fluctuation Localization energy of Magnetic Polaron
Free Exciton Magnetic Polarons FEMP Bipolaron Ferromagnetic Phase Transition via Free Exciton Magnetic Polarons ?
Experimental Setup for PL measurements Laser CCD or Streak camera Spectro- meter Sample 1.4 K Bulk Cd 1-x Mn x Te x = 5% Cd 1-y Mg y Te Cd 0.95 Mn 0.05 Te GaAs
Lasers LaserExciton density [/cm 3 ]rsrs Wavelength He-Ne2.2 x nm Ti: Sapphire2.8 x nm 250KHz OPA8.6 x nm 1KHz OPA2.2 x nm 1 kHz OPA 250 kHz OPA Ti: Sapphire He-Ne n rsrs Excitation intensity: 1mW, Focus size: 200 m, O.D. 1 a B = 6.7 nm n Mott = 7.9 x [cm-3]
Low Excitation Limit Exciton Density [cm -3 ] Absorption: 4.2 K, PL: 1.4K PL Light source : He-Ne 633nm Photoluminescence Absorption Photon energy [eV] Distinct PL line of the FEMP appear !! FEMP binding energy 1.8 meV Ti: S 1 kHz OPA 250 kHz OPA He-Ne BX
Photoluminescence Exciton Density – [cm -3 ] Ti:S 1 kHz OPA 250 kHz OPA He-Ne Excitation intensity normalized PL Exciton density 10 15, [cm -3 ] FEMP PL intensity: Saturate FX PL intensity: Increase BX
Time Resolved Photoluminescence Exciton Density 8.6 x cm Ti: S 1 kHz OPA 250 kHz OPA He-Ne AB 1.674eV 1.667eV BXEHP
Time Resolved Photoluminescence Exciton Density 8.6 x cm -3 A: eV ~ 150 ps Biexciton B: eV < 30 ps ? A Inverse Boltzman Ti: S 1 kHz OPA 250 kHz OPA He-Ne
Many Body Effect of FEMPs Coupled two FEMPs has been expected to be more stable than single FEMP Bi-polaron Bi-exciton
Photoluminescence Exciton Density > Mott Density Ti: S 1 kHz OPA 250 kHz OPA He-Ne Electron hole plasma I 4.2 Biexciton I 1.6 I = 5.6 × [cm -3 ]
Exciton Density Dependence of Origin of Photoluminescence FEMP Electron hole Plasma Biexciton Ti: S 1 kHz OPA 250 kHz OPA He-Ne
Summary PL measurements Exciton density: – [cm -3 ] FEMP Biexciton Electron hole plasma Future work Spin Dynamics Under Strong Excitation
Free Exciton Magnetic Polaron Hole mass: Electron mass: Hole 14.4Å Electron 64Å The number of Mn ion electron:481 hole:~5.5 Mn spin
Exciton Density Dependence When the exciton density is above cm -3 FEMP may disappear Ti: S 1 kHz OPA 250 kHz OPA He-Ne Excitation intensity normalized FEMP PL int. FEMP binding energy
Spin Relaxation Dynamics K
Time Resolved Photoluminescence Ti: S 1 kHz OPA 250 kHz OPA He-Ne kHz OPA laser76 MHz OPA laser 1.4K
Experimental Setup for PL measurements chopper Movable mirror Sample 13 K 1kHz OPA&CPA He-Ne Photodiode Spectro- meter Lock-in Amplifier
Discussions
Excitation Dependence of the PL Intensity Excited with Ti:Sapphire Laser
Peak position [eV] Binding Energy [meV] Absorption Biexciton FEMP Estimate by the E BX (4.1 meV) on CdSe
Purpose