MIRTHE Summer Workshop 2014, 04-08 August Four-zone quantum well infrared photodetector with a confined state in the continuum G. M. Penello, A. P. Ravikumar,

Slides:



Advertisements
Similar presentations
About Omics Group OMICS GroupOMICS Group International through its Open Access Initiative is committed to make genuine and reliable contributions to the.
Advertisements

Semiconductor Optical Sources
GaAs band gap engineering by colloidal PbS quantum dots Bruno Ullrich Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca,
Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK. Electrically pumped terahertz SASER device using a weakly coupled AlAs/GaAs.
EE 230: Optical Fiber Communication Lecture 11 From the movie Warriors of the Net Detectors.
1 st Workshop on Photo-cathodes: nm Problems and Obstacles for Developing Nano-structured Photo-cathodes Klaus Attenkofer July 20-21, 2009: University.
Quantum Well Infrared Detector
Magneto-optical study of InP/InGaAs/InP quantum well B. Karmakar, A.P. Shah, M.R. Gokhale and B.M. Arora Tata Institute of Fundamental Research Mumbai,
Optics on Graphene. Gate-Variable Optical Transitions in Graphene Feng Wang, Yuanbo Zhang, Chuanshan Tian, Caglar Girit, Alex Zettl, Michael Crommie,
Fiber-Optic Communications James N. Downing. Chapter 5 Optical Sources and Transmitters.
15_01fig_PChem.jpg Particle in a Box. 15_01fig_PChem.jpg Particle in a Box.
Full-band Simulations of Band-to-Band Tunneling Diodes Woo-Suhl Cho, Mathieu Luisier and Gerhard Klimeck Purdue University Investigate the performance.
9. Semiconductors Optics Absorption and gain in semiconductors Principle of semiconductor lasers (diode lasers) Low dimensional materials: Quantum wells,
Terahertz Conductivity of Silver Nanoparticles Abstract: The electrical conductivity for bulk metal is described by the well-known Drude model. As the.
An Introduction to Quantum Dot Spectrometer Amir Dindar ECE Department, University of Massachusetts, Lowell.
Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes Sheng-Horng Yen, Bo-Jean Chen, and Yen-Kuang Kuo* *Department of Physics,
Quantum Dots. Optical and Photoelectrical properties of QD of III-V Compounds. Alexander Senichev Physics Faculty Department of Solid State Physics
Quantum Dots: Confinement and Applications
Chapter 4 Photonic Sources.
Future Impacts Of Quantum Cascade Lasers On Spectroscopy
Growth and Characterization of IV-VI Semiconductor Multiple Quantum Well Structures Patrick J. McCann, Huizhen Wu, and Ning Dai* School of Electrical and.
Chapter 6 Photodetectors.
6.772/SMA Compound Semiconductors Lecture 6 - Quantum effects in heterostructures, II – Outline . Continue wells, wires, and boxes from L 5.
Solar Cells, Sluggish Capacitance, and a Puzzling Observation Tim Gfroerer Davidson College, Davidson, NC with Mark Wanlass National Renewable Energy Lab,
15_01fig_PChem.jpg Particle in a Box. Recall 15_01fig_PChem.jpg Particle in a Box.
Brad Gussin John Romankiewicz 12/1/04 Quantum Dots: Photon Interaction Applications.
LW4 Lecture Week 4-1 Heterojunctions Fabrication and characterization of p-n junctions 1.
OSC’s Industrial Affiliates Workshop, Tucson, Arizona March, 2005 GaAsSb QUANTUM WELLS FOR OPTOELECTRONICS AND INTEGRATED OPTICS Alan R. Kost, Xiaolan.
Time-Resolved Photoluminescence Spectroscopy of InGaAs/InP Heterostructures* Colleen Gillespie and Tim Gfroerer, Davidson College, Davidson, NC Mark Wanlass,
Chap. 41: Conduction of electricity in solids Hyun-Woo Lee.
Recombination Dynamics in Nitride Heterostructures: role of the piezoelectric field vs carrier localization A.Vinattieri, M.Colocci, M.Zamfirescu Dip.Fisica-
Micro-optical studies of optical properties and electronic states of ridge quantum wire lasers Presented at Department of Physics, Graduate.
1/41 Electronic Noise Spectroscopy of InGaAs QDs Tim Morgan.
Itoh Lab. M1 Masataka YASUDA
Terahertz waves base on SiGe Alloy NTU 林楚軒. Introduction Structure a.SiGe QW intersubband transition b.SiGe QW with dopant helping c.Si with dopant Summary.
NONRESONANT TUNNELING IN SHORT-PERIOD SUPERLATTICES WITH OPTICAL CAVITIES M.S. Kagan 1, I.V. Altukhov 1, S.K. Paprotskiy 1, A.N. Baranov 2, R. Teissier.
Resonant medium: Up to four (Zn,Cd)Se quantum wells. Luminescence selection is possible with a variation of the Cd-content or the well width. The front.
日 期: 指導老師:林克默、黃文勇 學 生:陳 立 偉 1. Outline 1.Introduction 2.Experimental 3.Result and Discussion 4.Conclusion 2.
Sample : GaAs (8nm) / Al 0.3 Ga 0.7 As (10nm) ×20 multiple quantum wells Light source : Mode-locked femtosecond Ti-sapphire laser Detection : Balancing.
Heterostructures & Optoelectronic Devices
1 Stephen SchultzFiber Optics Fall 2005 Semiconductor Optical Detectors.
Photovoltaics Continued: Chapter March 2014
An Investigation into the Effects of n-type Doping in InAs Quantum Dot Infrared Photodetectors Steven P. Minor Group: Brandon Passmore, Jiang Wu, Dr. Manasreh,
Gad Bahir – Technion Nanotechnology Workshop Quantum Dots Infrared Photodetectors (QDIPs) Gad Bahir Collaboration: E. Finkman, (Technion) D. Ritter.
MRS, 2008 Fall Meeting Supported by DMR Grant Low-Frequency Noise and Lateral Transport Studies of In 0.35 Ga 0.65 As/GaAs Studies of In 0.35 Ga.
1. EXPERIMENTAL  We used n-type GaN epilayers on sapphire with carrier concentration of ~3 x cm -3.  Native oxide was removed in the NH 4 OH: H.
C. Kadow, J.-U. Bae, M. Dahlstrom, M. Rodwell, A. C. Gossard *University of California, Santa Barbara G. Nagy, J. Bergman, B. Brar, G. Sullivan Rockwell.
Development of a cavity ringdown spectrometer for measuring electronic states of Be clusters JACOB STEWART, MICHAEL SULLIVAN, MICHAEL HEAVEN DEPARTMENT.
Conclusions References 1. A. Galimberti et al., Nucl. Instrum. Meth. A 477, (2002). 2. F. Capotondi et al., Thin Solid Films 484, (2005).
Controlled fabrication and optical properties of one-dimensional SiGe nanostructures Zilong Wu, Hui Lei, Zhenyang Zhong Introduction Controlled Si and.
High frequency photovoltaic ISB detectors in the near- and mid-IR SPIE Photonics West January 22, 2008 Daniel Hofstetter University of Neuchatel.
Date of download: 6/26/2016 Copyright © 2016 SPIE. All rights reserved. (a) AFM image of a single contacted nanowire comprised of p- and n-doped sections.
Small internal electric fields in quaternary InAlGaN heterostructures S.P. Łepkowski 1, P. Lefebvre 2, S. Anceau 1,2, T. Suski 1, H. Teisseyre 1, H. Hirayama.
Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Band profile and local density of states of a 40-nm GaAs pin junction solar cell.
Advanced laser and led structures, applications
Resonant Zener tunnelling via zero-dimensional states in a narrow gap InAsN diode Davide Maria Di Paola School of Physics and Astronomy The University.
Evaluation of Polydimethlysiloxane (PDMS) as an adhesive for Mechanically Stacked Multi-Junction Solar Cells Ian Mathews Dept. of Electrical and Electronic.
Electronics & Communication Engineering
Mingyun Li & Kevin Lehmann Department of Chemistry and Physics
Contact Resistance Modeling and Analysis of HEMT Devices S. H. Park, H
[Nonuniform primary photocurrent spreading in quantum well infrared photoconductors] M. Cook Solid State Physics Phys 8510.
High Operating Temperature Split-off Band IR Detectors
Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Absorbtion FTIR: Fourier transform infrared spectroscopy
Contact Resistance Modeling in HEMT Devices
(WP2) Characterization of Novel Materials for APDs
Photodetectors.
G. M. Penello, A. P. Ravikumar, D. L. Sivco and C. Gmachl
Atilla Ozgur Cakmak, PhD
Presentation transcript:

MIRTHE Summer Workshop 2014, August Four-zone quantum well infrared photodetector with a confined state in the continuum G. M. Penello, A. P. Ravikumar, D. L. Sivco and C. Gmachl

2 MIRTHE Summer Workshop 2014, August Motivation –Explore electron confinement by using electronic Bragg mirrors –Extend the energy range of III-V QWIPs (InGaAs/InAlAs lattice matched to InP) –Mid-IR application –Gas sensing systems –Free space communication P. Kluczynski et al., Appl. Phys. B: Lasers and Opt., 105, 2, 427–434 (2011).

3 MIRTHE Summer Workshop 2014, August QWIP Continuum Bound to continuum Quantum Well Infrared Photodetector Bound to bound Bound to quasibound Continuum High selectivity (narrow absorption peak) Tunable for a fixed bandoffset Poor carrier extraction Easy carrier extraction Tunable for a fixed bandoffset Lower selectivity (broad absorption peak) Good selectivity (narrow absorption peak) Easy carrier extraction Limited tunability for a fixed bandoffset

4 MIRTHE Summer Workshop 2014, August Bragg mirror Refraction and reflectionBragg mirror for electrons Electron with energy higher than the barrier Electron with energy lower than the barrier reflection on the interface refraction on the interface reflection on a layered material Electron with energy satisfying the bragg condition How to confine an electron in the continuum?

5 MIRTHE Summer Workshop 2014, August Continuum-localized states “Defect” on the superlattice. “defect” Increase transition energy High selectivity Easy carrier extraction Tunability not limited by bandoffset Low thermal excitation E z Bragg mirror Miniband is not shown for clarity

6 MIRTHE Summer Workshop 2014, August Continuum-localized states E0E0 E1E1 E2E2 E 0 →E 1 E 0 →E 2 Photocurrent Increase transition energy High selectivity Easy carrier extraction Tunability not limited by bandoffset Low thermal excitation Central QW = 2.5 nm Lateral QWs = 2.0 nm Barriers = 7.0 nm Best fit CQW: 2.4 nm LQWs: 1.7 nm Barriers: 6 nm Work done in collaboration with M. H. Degani, M. Z. Maialle, R. M. S. Kawabata, D. N. Micha, M. P. Pires, and P. L. Souza.

7 MIRTHE Summer Workshop 2014, August Asymmetric QWIP with a confined state in the continuum Asymmetric structure to explore a photovoltaic QWIP and a bias dependence of the photocurrent. High selectivity Easier carrier extraction in one direction Low thermal excitation E z

8 MIRTHE Summer Workshop 2014, August Four-zone QWIP with a confined state in the continuum 1 – emission zone 2 – drift zone 3 – capture zone 4 – tunneling (repopulation) zone

9 MIRTHE Summer Workshop 2014, August Simulation Asymmetric sample Bound to continuum QWIP Bound to bound QWIP (confined state in the continuum) Reference sample Monolayer = nm –LQW = 7 monolayers ~ –DQW = 9 monolayers ~ –Barriers = 24 monolayers ~ Absorption cross section –Transfer matrix method –FWHM = 30 meV  ~ 0.1 (Typical in bound to bound transition) 2.1 nm 2.6 nm 7.0 nm InGaAs / InAlAs lattice matched to InP

10 MIRTHE Summer Workshop 2014, August Samples MBE –InGaAs / InAlAs lattice matched to InP –n-doped (2x10 18 cm -3 ) –Active layers repeated 20x separated by 30 nm InAlAs –InGaAs contact layers n-doped (2x10 18 cm -3 ) Processing –Wet etch –Ti/Au metallization –45 o lapping –Au wire bond QWIP mesa n-doped Reference sample Asymmetric sample

11 MIRTHE Summer Workshop 2014, August Photocurrent Excellent agreement between theoretical and experimental results. Photocurrent observed without applied bias on the asymmetric sample –“Four zone” photovoltaic QWIP 80K 0V 80K -5V  Asymmetric sample Reference sample

12 MIRTHE Summer Workshop 2014, August Photocurrent “Leaky” localized state More extended states to couple Broad photocurrent peak Similar to the reference sample Localized state Less extended states to couple Narrow photocurrent peak

13 MIRTHE Summer Workshop 2014, August Conclusion and future steps Asymmetric heterostructure with a confined state in the continuum was designed Photocurrent measurements confirmed the confined state in the continuum Photocurrent signal at 0V - photovoltaic QWIP Bias dependent photocurrent was explained by the asymmetry of the sample Figures of merit to be measured (responsivity and detectivity) “Four zone” photovoltaic QWIP to be optimized in our structure New heterostructures using the confined states in the continuum to be explored

14 MIRTHE Summer Workshop 2014, August Acknowledges Qcllab Capes Foundation, Ministry of Education of Brazil. MIRTHE (NSF-ERC)