Quantum Confinement in Nanostructures Confined in: 1 Direction: Quantum well (thin film) Two-dimensional electrons 2 Directions: Quantum wire One-dimensional.

Slides:



Advertisements
Similar presentations
Seminarul National de Nanostiinta si Nanotehnologie
Advertisements

Half-Metallic Single Crystal CrO2 Films
Gate Control of Spin Transport in Multilayer Graphene
Topological Insulators
Spintronics with topological insulator Takehito Yokoyama, Yukio Tanaka *, and Naoto Nagaosa Department of Applied Physics, University of Tokyo, Japan *
Materials Research Science and Engineering Center William H. Butler University of Alabama-Tuscaloosa, DMR Update: January, 27, 2005 Commercialization.
Quantum Mechanics and Spin-Valves Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong The 13th IEEE Inter. Conf. on Nanotechnology, August 5-8, Beijing,
The resistivity of bulk ferromagnetic metals depends on the angle between the magnetization and the electric current. This phenomenon was discovered by.
Solid state midterm report Quantum Hall effect g Chienchung Chen.
Topics in Condensed Matter Physics Lecture Course for graduate students CFIF/Dep. Física Spin-dependent transport theory Vitalii Dugaev Winter semester:
D-wave superconductivity induced by short-range antiferromagnetic correlations in the Kondo lattice systems Guang-Ming Zhang Dept. of Physics, Tsinghua.
Lecture 1: A New Beginning References, contacts, etc. Why Study Many Body Physics? Basis for new Devices Complex Emergent Phenomena Describe Experiments.
Memory Storage in Near Space Environment Collin Jones University of Montana Department of Physics and Astronomy.
Emergent phenomena at oxide interfaces Chen Ke, Liu Donghao, Lv Peng, Shen Bingran, Yan Qirui, Yang Wuhao, Ye Qijun, Zhu Chenji Nov. 19 th.
Magnetic Tunnel Junctions. Transfer Hamiltonian Tunneling Magnetoresistance.
The electronic structures of 2D atomically uniform thin film S.- J. Tang, T. Miller, and T.-C. Chiang Department of Physics, University of Illinois at.
B.Spivak with A. Zuyzin Quantum (T=0) superconductor-metal? (insulator?) transitions.
Magnetic sensors and logic gates Ling Zhou EE698A.
Relaziation of an ultrahigh magnetic field on a nanoscale S. T. Chui Univ. of Delaware
Electrons in Solids Energy Bands and Resistance in Conductors and Semiconductors.
Magnetic Storage The smallest region with uniform magnetism is called a “domain” Each bit requires two domains to allow for error identification If two.
1 Motivation: Embracing Quantum Mechanics Feature Size Transistor Density Chip Size Transistors/Chip Clock Frequency Power Dissipation Fab Cost WW IC Revenue.
In Memory of H. C. Siegmann - the father of modern spin physics Joachim Stöhr SLAC.
Magnetoresistive Random Access Memory (MRAM)
Ballistic and quantum transports in carbon nanotubes.
Magnetic Data Storage. 5 nm Optimum Hard Disk Reading Head.
Magnetic Properties of Materials
Quantum Confinement BW, Chs , YC, Ch. 9; S, Ch
Computational Solid State Physics 計算物性学特論 第9回 9. Transport properties I: Diffusive transport.
1 Unit 4 Selected Topics. 2 Spintronic devices Hard disk drivesHard disk drives –GMR –Spin valve MRAMMRAM –Pseudo-spin valve –Magnetic tunnel junction.
Spintronics and Graphene  Spin Valves and Giant Magnetoresistance  Graphene spin valves  Coherent spin valves with graphene.
Electrons in Solids Carbon as Example
Magnetoresistive Random Access Memory (MRAM)
Specific Heat of Solids Quantum Size Effect on the Specific Heat Electrical and Thermal Conductivities of Solids Thermoelectricity Classical Size Effect.
Review for Exam 2 Spring, 2002 Charges in Conductors  Electric fields are created when positive charges and negative charges are separated  A uniform.
Magnetism in ultrathin films W. Weber IPCMS Strasbourg.
The Story of Giant Magnetoresistance (GMR)
Electrical Conductivity
Quantum Confinement Examples. N atomic layers with the spacing a = d/n N quantized states with k n ≈ n   /d ( n = 1,…,N ) Quantization in a Thin Film.
L4 ECE-ENGR 4243/ FJain 1 Derivation of current-voltage relation in 1-D wires/nanotubes (pp A) Ballistic, quasi-ballistic transport—elastic.
ECE : Nanoelectronics Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
ELECTRON AND PHONON TRANSPORT The Hall Effect General Classification of Solids Crystal Structures Electron band Structures Phonon Dispersion and Scattering.
University of Alabama MRSEC William H. Butler DMR Theory of Tunneling Magnetoresistance Leads to New Discoveries with Potential Technological Impact.
Quantum Confinement BW, Chs , YC, Ch. 9; S, Ch. 14; outside sources.
Quantum Confinement. Overview of Quantum Confinement History: In 1970 Esaki & Tsu proposed fabrication of an artificial structure, which would consist.
O AK R IDGE N ATIONAL L ABORATORY U. S. D EPARTMENT OF E NERGY Modeling Electron and Spin Transport Through Quantum Well States Xiaoguang Zhang Oak Ridge.
Magnetic Nanostructures F. J. Himpsel, Dept. of Physics, UW-Madison Limits of Data Storage Magnetoelectronics One-Dimensional Structures on Silicon SSSC.
Adsorbate Influence on the Magnetism of Ultrathin Co/Cu Systems
1 of xx Coulomb-Blockade Oscillations in Semiconductor Nanostructures (Part I & II) PHYS 503: Physics Seminar Fall 2008 Deepak Rajput Graduate Research.
Monday, January 31, 2011 A few more instructive slides related to GMR and GMR sensors.
Introduction to Spintronics
The many forms of carbon Carbon is not only the basis of life, it also provides an enormous variety of structures for nanotechnology. This versatility.
From an Atom to a Solid Photoemission spectra of negative copper clusters versus number of atoms in the cluster. The highest energy peak corres- ponds.
Electrons in Solids Simplest Model: Free Electron Gas Quantum Numbers E,k Fermi “Surfaces” Beyond Free Electrons: Bloch’s Wave Function E(k) Band Dispersion.
Tunneling PH671 - Transport. Tunneling (MIM) Scanning tunneling microscopy (STM)
Igor Lukyanchuk Amiens University
Quantum Confinement BW, Chs , YC, Ch. 9; S, Ch. 14; outside sources.
MR and Spin Valve Bae Hae Kyong.
Unbound States A review on calculations for the potential step.
Magnetoresistive Random Access Memory (MRAM)
EE 315/ECE 451 Nanoelectronics I
Magnetic Data Storage and Nanotechnology
Band structure: Semiconductor
The route from fundamental science to technological innovation
Fermi Wavevector 2-D projection ky of 3-D k-space dk
Observed by Photoemission
Molecular Adsorption on Metallic Nanostructures:
Presented by: Bc. Roman Hollý
Molecular Adsorption on Metallic Nanostructures:
Observation of Intrinsic Quantum Well States and
Presentation transcript:

Quantum Confinement in Nanostructures Confined in: 1 Direction: Quantum well (thin film) Two-dimensional electrons 2 Directions: Quantum wire One-dimensional electrons 3 Directions: Quantum dot Zero-dimensional electrons Each confinement direction converts a continuous k in a discrete quantum number n. kxkx nznz nyny nyny nznz nxnx kxkx kyky nznz

N atomic layers with the spacing a = d/n N quantized states with k n ≈ n   /d ( n = 1,…,N ) Quantization in a Thin Crystal An energy band with continuous k is quantized into N discrete points k n in a thin film with N atomic layers. n = 2d / n k n = 2  / n = n   /d d E 0  /a  /d E Fermi E Vacuum Photoemission Inverse Photoemission Electron Scattering kk = zone boundary

N atomic layers with spacing a = d/n :  N quantized states with k n ≈ N   /d Quantization in Thin Graphite Films E 0  /a  /d E Fermi E Vacuum Photoemission Lect. 7b, Slide 11 kk 1 layer = graphene 2 layers 3 layers 4 layers  layers = graphite

Quantum Well States in Thin Films discrete for small N becoming continuous for N   Paggel et al. Science 283, 1709 (1999)

Periodic Fermi level crossing of quantum well states with increasing thickness Counting Quantum Well States Number of monolayers N n n

Kawakami et al. Nature 398, 132 (1999) Himpsel Science 283, 1655 (1999) Quantum Well Oscillations in Electron Interferometers Fabry-Perot interferometer model: Interfaces act like mirrors for electrons. Since electrons have so short wavelengths, the interfaces need to be atomically precise. n

The Important Electrons in a Metal Energy  E Fermi Energy Spread  3.5 k B T Transport (conductivity, magnetoresistance, screening length,...) Width of the Fermi function: FWHM  3.5 k B T Phase transitions (superconductivity, magnetism,...) Superconducting gap: E g  3.5 k B T c (T c = critical temperature)

Energy Bands of Ferromagnets States near the Fermi level cause the energy splitting between majority and minority spin bands in a ferromagnet (red and green). Ni Energy Relative to E F [eV] k || along [011] [Å -1 ] Calculation Photoemission data

(Qiu, et al. PR B ‘92) Quantum Well States and Magnetic Coupling The magnetic coupling between layers plays a key role in giant magnetoresistance (GMR), the Nobel prize winning technology used for reading heads of hard disks. This coupling oscillates in sync with the density of states at the Fermi level.

Minority spins discrete, Majority spins continuous Magnetic interfaces reflect the two spins differently, causing a spin polarization. Spin-Polarized Quantum Well States

Filtering mechanisms Interface: Spin-dependent Reflectivity  Quantum Well States Bulk: Spin-dependent Mean Free Path  Magnetic “Doping” Parallel Spin Filters  Resistance Low Opposing Spin Filters  Resistance High Giant Magnetoresistance and Spin - Dependent Scattering

Giant Magnetoresistance (GMR): (Metal spacer, here Cu) Tunnel Magnetoresistance (TMR): (Insulating spacer, MgO) Magnetoelectronics Spin currents instead of charge currents Magnetoresistance = Change of the resistance in a magnetic field