CAMTECH 2011 Regi. High energy e - beam scans sample surface (Raster - line by line). Provides information about surface and near-surface atoms – topography.

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Presentation transcript:

CAMTECH 2011 Regi

High energy e - beam scans sample surface (Raster - line by line). Provides information about surface and near-surface atoms – topography and chemical composition. Stereoscopic images (3D perspective) 2

BSE Emissions of SE Electrostatic force Incident beam 10nm Constituent atoms 3

Backscattered Electrons (BSE) increase in reflectivity with growth in atomic number Secondary electrons (SE) predominantly produced by the interactions between highly energetic beam electrons and weakly bonded. Only SE produced within a depth of 10 nm can escape the sample SpecimenOrigin of e - MetalConduction band Insulator/SemiconductorValence band 4

Energy below 50 eV Electron Emission Yield The bigger the yield the bigger the signal intensity - varies from material to material - increases with e - -beam incident angle 5 SE BSE k 10k 20k Energy of e - emitted from specimen (log eV) Relative count of emitted e -

Carry information about topography and defects adjacent to surface (depth) – 10 nm 6 BSE SE

7 Distinguished SE1, SE2 and SE3 SE1: emitted from the e - -beam irradiation point SE2: emitted along with the springing-out process of BSE SE3: due to BSE collisions with Parts other than the specimen

8 Everhart and Thornley Detector: designed in 1960 to collect and amplify the signal provenient from SE SE Light guide Scintillator Photoelectric conversion face Dynode Collecting electrode

9