Thomas Jefferson National Accelerator Facility Page 1 SVT – Review January Sensors for the Silicon Vertex Tracker Amrit Yegneswaran

Thomas Jefferson National Accelerator Facility Page 2 SVT – Review January Topics Overview Sensors Specifications Design Quality Assurance 1 st Article Tests Schedule Summary

Thomas Jefferson National Accelerator Facility Page 3 SVT – Review January Overview: Performance Expectations Coverage Θ 35 o — 125 o Φ~2 π Resolutions σ p /p < 5 1 GeV ΔθΔθ < 10 — 20 [mrad] ΔΦ < 5 [mrad] Tracking Efficiency ~90%

Thomas Jefferson National Accelerator Facility Page 4 SVT – Review January GEMC Detector Simulation Includes electro-magnetic and hadronic backgrounds and noise Rates estimated for LH2, LD2, C, Fe, and Pb targets For L = cm -2 s -1 Rates from carbon target ‒ Threshold E ≈ 40 KeV –Hadronic rate : ~5 MHz –Total rate: ~16 MHz –Strip hit rate (R1, 6.3 KHz), (R2, 4.5 KHz), (R3, 3.5 KHz), (R4, 2.6 KHz) Radiation dose for carbon target ‒ 50 % operation ‒ 15 years duration –~2.5 Mrads Overview: Rates and Radiation Dose

Thomas Jefferson National Accelerator Facility Page 5 SVT – Review January Space Location constrained ‒ by the high threshold Cerenkov counter in the forward direction ‒ by size of polarized target and by the time-of-flight detector in the radial direction Multiple scattering Radiation dose Heat load Placement tolerances Overview: Detector Design Considerations

Thomas Jefferson National Accelerator Facility Page 6 SVT – Review January Electronics Sensors Overview: SVT Layout Units in mm Four regions Sectors( ) beam direction

Thomas Jefferson National Accelerator Facility Page 7 SVT – Review January Overview: Region 1 Gap

Thomas Jefferson National Accelerator Facility Page 8 SVT – Review January Overview: Tolerances Z X Module FNAL [µm] Module [µm] Total [µm] Physics [µm] X1018*20 Y Z These tolerances, given at the 1  level, keep σ p /p < 2% for p < 1.6 GeV * after survey

Thomas Jefferson National Accelerator Facility Page 9 SVT – Review January Overview: Module Modules are identical Modules have three types of sensors ‒ Hybrid, Intermediate, and Far Module radiation length [Xo ] ~ 1% All module components first-article tested

Thomas Jefferson National Accelerator Facility Page 10 SVT – Review January Sensor Design Sensors design based on proven and reliable designs used at other labs Comparison study of sensor designs performed for: CDF, D0, ATLAS, CMS, GLAST 50+ electrical and mechanical design parameters were reviewed.

Thomas Jefferson National Accelerator Facility Page 11 SVT – Review January Sensor Specifications: Mechanical Outer size mm x mm Active area mm x mm Dicing tolerance ± 20 µm # of readout strips 256 # of intermediate strips 256 Implant strip pitch 78 µm Readout strip pitch 156 µm Implant strip width 20 µm Aluminum strip width 26 µm Implant width / pitch ratio Angle of strips 0°(strip 1) to 3°(strip 256) Overhang of Al strip 3 µm (on each side)

Thomas Jefferson National Accelerator Facility Page 12 SVT – Review January Sensor Specifications: Electrical Full depletion voltage 40<V<100 (25° RH) Interstrip capacitance <1.2 pF/cm Leakage current depletion V) <10 nA/cm 2 Strip to back side capacitance< 0.2 pF/cm Interstrip isolation V)>1 GΩ Resistance of Al strips< 20 Ω/cm Coupling capacitance > 20 pF/cm Total (strip) capacitance ≤ 1.3 pF/cm; (C tot = 2*C int + C 1 MHz) Value of poly-silicon bias resistor 1.5 MΩ Single strip DC current < 2 nA CLAS-Note , Silicon Micro-Strip Sensors for the Hall B CLAS12 SVT

Thomas Jefferson National Accelerator Facility Page 13 SVT – Review January Sensor Design: Layout of Sensors U Layer V Layer Graded pitch design; Stereo angle from 0°- 3° CLAS-Note , Sensor Mask Layout Procedure

Thomas Jefferson National Accelerator Facility Page 14 SVT – Review January Sensor Design: Hybrid Sensor Layout

Thomas Jefferson National Accelerator Facility Page 15 SVT – Review January Sensor Design: Wafer Layout/Mask Sensors cut from 6” wafers 2 sensors/wafer All sensors have same size ( mm x 42 mm) Sensor size ‒ Maximizes yield per wafer ‒ Minimizes total number of sensors Units in mm Baby sensor Wire Bond Test PadsTest Structures

Thomas Jefferson National Accelerator Facility Page 16 SVT – Review January Quality Assurance: Risk Mitigation Single-sided construction Higher yield, higher reliability Identical modules, 3 types of sensors Design similar to sensors used in other experiments Manufactured by Hamamatsu Corporation Extensive experience CMS: ‒ Largest silicon detector ever built with 200 m² sensor area, ~20,000 silicon strip sensors with <0.01% defective strips ATLAS - ~17,000 single-sided micro strip sensors CDF D0 Recommended by other labs and reviewers as best in the world

Thomas Jefferson National Accelerator Facility Page 17 SVT – Review January Quality Assurance Procedures for module fabrication and SVT assembly developed CLAS-Note , Silicon Vertex Tracker Quality Assurance, Electrical Testing of Sensors CLAS-Note , Silicon Vertex Tracker Quality Assurance, Electrical Testing of Modules Fiducial marks for alignment Custom fixtures to prevent shipping damage Testing and assembly to be performed in clean room Alignment markers on support structure for detector installation Information to be supplied by the Hamamatsu for each sensor: ID # engraved in the area provided on the sensor Sensor ID numbers listed for each wafer Traceability data: relative yield of a batch, start and end dates of processing, and wafer numbers Test results for each sensor

Thomas Jefferson National Accelerator Facility Page 18 SVT – Review January Quality Assurance: Hamamatsu

Thomas Jefferson National Accelerator Facility Page 19 SVT – Review January Quality Assurance: Jlab/FNAL Components will be tested before assembly at FNAL Modules will be checked at FNAL facilities Burn-in tests will be conducted by Jlab at FNAL facility Modules will be checked again upon receipt at Jlab

Thomas Jefferson National Accelerator Facility Page 20 SVT – Review January Quality Assurance: Work flow Process StepTest Location Sensors manufacturedHamamatsu Sensors arrive at FermilabFermilab Comments Sensors tested before module assembly Sensors shipped Module assembly and burn-in test Fermilab Modules shipped to Jlab Acceptance testingJlabPrior to integration Modules mounted into support structure JlabMoved to Hall B SVT support structure mounted into CLAS12 JlabStart of commissioning

Thomas Jefferson National Accelerator Facility Page 21 SVT – Review January st Article Tests: Summary Jlab Spec # Specification Item Specification Value Hamamatsu Measured Values Comments HybridIntermediateFar 5.8.a Full depletion voltage 40<V<100 (25° RH) Serial # 165 VSerial # 170 VSerial # 170 V Meets specification Serial # 265 VSerial # 265 VSerial # 270 V Serial # 365 VSerial # 365 VSerial # 370 V Serial # 465 VSerial # 470 VSerial # 470 V Serial # 570 VSerial # 570 VSerial # 570 V Serial # 670 VSerial # 670 VSerial # 670 V 5.8.b Total leakage current ≤10 nA/cm² (at full depletion voltage) Serial # 12.2 nA/cm²Serial # 12.3 nA/cm²Serial # 12.6 nA/cm² Exceeds specification avg over 18 sensors is a factor of 4.2 better than the spec. Serial # 22.1 nA/cm²Serial # 22.3 nA/cm²Serial # 22.8 nA/cm² Serial # 32.8 nA/cm²Serial # 32.4 nA/cm²Serial # 32.2 nA/cm² Serial # 42.4 nA/cm²Serial # 42.3 nA/cm²Serial # 42.5 nA/cm² Serial # 52.1 nA/cm²Serial # 52.5 nA/cm²Serial # 52.2 nA/cm² Serial # 62.2 nA/cm²Serial # 62.3 nA/cm²Serial # 62.4 nA/cm² 5.8.c Interstrip capacitance <1.2 pf/cm Max0.46 pf/cmMax0.50 pf/cmMax0.53 pf/cm Exceeds specification. avg over 18 sensors is a factor of 2.5 better than the spec. Min0.45 pf/cmMin0.45 pf/cmMin0.52 pf/cm Avg0.46 pf/cmAvg0.48 pf/cmAvg0.52 pf/cm 5.8.f Resistance of Al electrode on strips < 20 Ω /cm Max6.89 Ω/cmMax6.82 Ω/cmMax6.94 Ω/cm Exceeds specification avg over 18 sensors is a factor of 3 better than the spec. Min6.51 Ω/cmMin6.59 Ω/cmMin6.57 Ω/cm Avg6.69 Ω/cmAvg6.72 Ω/cmAvg6.79 Ω/cm 5.8.k Value of poly- silicon bias resistor 1.5 MΩ ±0.5 MΩ Max1.43 MΩMax1.53 MΩMax1.53 MΩ Meets specification Min1.37 MΩMin1.48 MΩMin1.48 MΩ Avg1.40 MΩAvg1.50 MΩAvg1.51 MΩ 5.9.a & 5.9.b Strip yield Bad channel rate (avg. over every 100 sensors) ≤1% max # of channels per sensor ≤ 2% Serial # 10 %Serial # 10 %Serial # 10 % Exceeds specification (actual Yield ~.025% bad strips) Serial # 20.2 %Serial # 20 %Serial # 20 % Serial # 30 %Serial # 30 %Serial # 30 % Serial # 40 %Serial # 40 %Serial # 40 % Serial # 50 %Serial # 50 %Serial # 50.3 % Serial # 60 %Serial # 60 %Serial # 60 %

Thomas Jefferson National Accelerator Facility Page 22 SVT – Review January st Article Tests: Verification Hamamatsu results verified by MSU/FNAL/Jlab Testing performed independently Verified all specification values Results of the tests agree with Hamamatsu’s results

Thomas Jefferson National Accelerator Facility Page 23 SVT – Review January st Article Tests: C-V

Thomas Jefferson National Accelerator Facility Page 24 SVT – Review January st Article Tests: C-V

Thomas Jefferson National Accelerator Facility Page 25 SVT – Review January st Article Tests: I-V

Thomas Jefferson National Accelerator Facility Page 26 SVT – Review January st Article Tests: IV

Thomas Jefferson National Accelerator Facility Page 27 SVT – Review January Schedule: History ActivityCompleted Award of contract (Hamamatsu)December 2010 Mask designApril 2011 Sensor mask approvalMay 2011 First article sensors receivedAugust 2011 First article sensors testedSeptember 2011 Assembly of 1 st electrical grade moduleOctober 2011 Testing of 1 st electrical grade moduleDecember 2011

Thomas Jefferson National Accelerator Facility Page 28 SVT – Review January Schedule: Upcoming ActivityLocationStartFinishDuration Approval to start production sensorsJlab/MSU/Fermilab 2-Apr-12 Manufacturing of production R1-3 batch #1Hamamatsu2-Apr-1211-Jun-1210 weeks Manufacturing of production R1-3 batch #2Hamamatsu12-Jun-1210-Jul-124 weeks Manufacturing of production R1-3 batch #3Hamamatsu11-Jul-128-Aug-124 weeks Manufacturing of production R1-3 batch #4Hamamatsu9-Aug-1230-Aug-124 weeks Completion of sensor contract (R1-3)Hamamatsu 30-Aug-12 Start of R4 Sensor ProductionHamamatsu1-Oct-12 Manufacturing of production R4 batch #1Hamamatsu1-Oct-1231-Dec-1210 weeks Manufacturing of production R4 batch #2Hamamatsu1-Jan-1331-Jan-134 weeks Manufacturing of production R4 batch #3Hamamatsu1-Feb-1328-Feb-134 weeks Completion of sensor contract (R4)Hamamatsu 28-Feb-13

Thomas Jefferson National Accelerator Facility Page 29 SVT – Review January Summary Design achieves the physics specifications Robust and proven design Single-sided 320 μm sensors –Standard technology, good track record Coverage –Θ coverage BST: 35 o – 125 o –Φ coverage ~2  –SVT: 4 regions (u-v “graded stereo” 0 o – 3 o ) Good segmentation, good resolution High efficiency for track reconstruction over all  Low fake track efficiency at L=10 35 cm -2 s -1 Good momentum resolution –Proved by a full event simulation and reconstruction program First Article Sensors received and checked by FNAL/MSU/Jlab First Article Sensors meet or exceed specifications Electrical Grade 1 st Article Module Tests completed

Thomas Jefferson National Accelerator Facility Page 30 SVT – Review January Thank You