Parameters Identification of Embedded PTAT Temperature Sensors for CMOS Circuits MIXDES '07. 14th International Conference on Mixed Design of Integrated.

Slides:



Advertisements
Similar presentations
Modelling power LEDs in SPICE with selfheating taken into account Krzysztof Górecki Department of Marine Electronics Gdynia Maritime University, POLAND.
Advertisements

Nonlinear Compact Thermal Model of SiC Power Semiconductor Devices Krzysztof Górecki, Janusz Zarębski, Damian Bisewski and Jacek Dąbrowski Department of.
The nonlinear compact thermal model of power MOS transistors
SMART TEMPERATURE SENSOR digital temperature sensor
SPICE-modelling and the analysis of the self-excited push-pull dc-dc converter with selfheating taken into account Krzysztof Górecki and Janusz Zarębski.
Instructor:Po-Yu Kuo 教師:郭柏佑
1 A New Successive Approximation Architecture for Low-Power Low-Cost A/D Converter IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL.38, NO.1, JANUARY 2003 Chi-sheng.
The method of a fast electrothermal transient analysis of a buck converter Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics Gdynia.
Temperature Dependence of FPN in Logarithmic CMOS Image Sensors Dileepan Joseph¹ and Steve Collins² ¹University of Alberta, Canada ²University of Oxford,
©2007 Kwangsik Choi Characterization of Silicon Devices at Cryogenic Temperatures (Thesis of Jeffrey F. Allnutt M.S.) Kwangsik Choi.
A CMOS Front-end Amplifier Dedicated to Monitor Very Low Amplitude Signals from Implantable Sensors ECEN 5007 Mixed Signal Circuit Design Sandra Johnson.
Applied Sensor Technology. Outline Introduction Examples of Sensors Basic readout electronics Semiconductor detectors.
Wireless System for TPS Sensors Presented By: Tye Reid and Greg Swanson.
Temperature Sensing Integrated Circuit PROs: CONs: Most Linear
Adaptive Integrated Microsystems Introduction ECE 418 Algorithms of Circuit Design (Fall 2005)
VLSI System Design – ECES 681 Lecture: Interconnect -1 Prashant Bhadri Office: Rhodes Hall - 933C Department of ECECS, College of.
Engineering 80 – Spring 2015 Temperature Measurements
Influence of MOSFET Model Form on Boost Converter Characteristics at the Steady State Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics.
Module 3 Eng. Asma Abu Baker. Introduction One of the most important uses of instruments or measuring devices is in the field of process control. If you.
ISSCC Dig. Tech. Papers, Feb. 2006
Transducers/Sensors: Sample Device Thermistor A thermistor is a temperature-sensing element composed of semiconductor material (typically a mix of metal.
1 Neural plug-in motor coil thermal modeling Mo-Yuen Chow; Tipsuwan Y Industrial Electronics Society, IECON 26th Annual Conference of the IEEE, Volume:
Slide # 1 Examples of pressure sensor packaging Temperature characteristics of a piezoresistive pressure sensor. Transfer function at three different temperatures.
MAGNETO-OPTICAL CURRENT TRANSFORMER.
ECE 1352 Presentation Active Pixel Imaging Circuits
Simple and Accurate Approach to Implement the Complex Trans-Conductance in Time- Domain Simulators M. Homayouni, D. Schreurs, and B. Nauwelaers K.U.Leuven,
1 CMOS Temperature Sensor with Ring Oscillator for Mobile DRAM Self-refresh Control IEEE International Symposium on Circuits and Systems, Chan-Kyung.
1 姓名 : 李國彰 指導教授 : 林志明老師 A 1v 2.4GHz CMOS POWER AMPLIFIER WITH INTEGRATED DIODE LINEARIZER ( The 2004 IEEE Asia-Pacific Conference on Circuits and Systems,
Design of a GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, APMC 2005.
MSP430 Group Project ECE 300 Spring 2007 Dr. Walter Green Jeffrey Logsdon John Ly Daniel Henderson Nataly Sumarriva.
Gerousis Toward Nano-Networks and Architectures C. Gerousis and D. Ball Department of Physics, Computer Science and Engineering Christopher Newport University.
An Electronic Calibration Scheme for Logarithmic CMOS Pixels Bhaskar Choubey, Satoshi Ayoma*, Stephen Otim, Dileepan Joseph**, Steve Collins, University.
3V CMOS Rail to Rail Op-Amp
Guohe Yin, U-Fat Chio, He-Gong Wei, Sai-Weng Sin,
Seminar ON SMART SENSOR Submitted by : SUBIR KUMAR GHOSH Roll No. IN-14/04 Electrical & Instrumentation Deptt. B.E 7th Semester JORHAT ENGINEERING COLLEGE,
A CMOS VCO with 2GHz tuning range for wideband applications Speaker : Shih-Yi Huang.
Design of a 10 Bit TSMC 0.25μm CMOS Digital to Analog Converter Proceedings of the Sixth International Symposium on Quality Electronic Design IEEE, 2005.
Application of the Electrothermal Average Inductor Model for Analyses of Boost Converters Krzysztof Górecki, Janusz Zarębski, Kalina Detka Gdynia Maritime.
18/10/20151 Calibration of Input-Matching and its Center Frequency for an Inductively Degenerated Low Noise Amplifier Laboratory of Electronics and Information.
A 1-V 15  W High-Precision Temperature Switch D. Schinkel, R.P. de Boer, A.J. Annema and A.J.M. van Tuijl A 1-V 15  W High-Precision Temperature Switch.
IEEE Transactions on Circuits and Systems II: Express Briefs
Ultra-low-Power Smart Temperature Sensor with Subthreshold CMOS Circuits International Symposium on Intelligent Signal Processing and Communications, 2006.
THE ELECTROTHERMAL ANALYSIS OF A SWITCHED MODE VOLTAGE REGULATOR Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics Gdynia Maritime.
Mixed Signal Chip Design Lab Cubic Function Generator Design Boram Lee, Jaehyun Lim Department of Computer Science and Engineering The Pennsylvania State.
A Wide-Input-Range 8 bit Cyclic TDC Reportor : Zhu kunkun.
Mixed Signal Chip Design Lab Cubic Function Generator Design Boram Lee, Jaehyun Lim Department of Computer Science and Engineering The Pennsylvania State.
Minimization in variation of output characteristics of a SOI MOS due to Self Heating Sahil M. BansalD.Nagchaudhuri B.E. Final Year, Professor, Electronics.
Integrated VLSI Systems EEN4196 Title: 4-bit Parallel Full Adder.
THERMAL SENSORS 指導教授 : 吳坤憲 老師 報告學生 : 蕭傑穎.
Chapter 2 Circuit Elements.
Conclusion This study involves the development of a procedure to measure the actual energy performance of a building: the Dwelling Energy Measurement Procedure.
Bandgap Reference Voltage SVTH:Đặng Thanh Tiền. Bandgap Reference Voltage  Abstract  Introduction  Circuit of the BGR  Simulation  Conclusion  References.
OHM’S LAW AND ELECTRICAL POWER. OHM’S LAW “Provided the physical conditions, such as temperature, are kept constant, the resistance is constant over a.
COLLEGE OF ENGINEERING BHUBANESWAR PRESENTED BY RAVI BHUSHAN REGD.NO
Engineering 80 – Spring 2016 Temperature Measurements 1 SOURCE: 3_standardbody__to-226_straightlead.jpg SOURCE:
TRANSMISSION LINE MULTIPLE FAULT DETECTION AND INDICATION TO EB
Modelling LED Lamps with Thermal Phenomena Taken into Account Krzysztof Górecki and Przemysław Ptak Gdynia Maritime University Department of Marine Electronics.
Introduction SISSI: Simulator for Integrated Structures by Simultaneous Iteration Experimental software package on top of a particular design kit within.
AIDA design review 31 July 2008 Davide Braga Steve Thomas
Dynamic Frequency Scaling using on-chip Thermal Sensors in ASAP7 7nm Predictive PDK Vaibhav Verma Mandi Das Wole Jaiyeoba.
Measurements & Instrumentation – Module 3
Małgorzata Godlewska, Krzysztof Górecki
Dynamic Frequency Scaling using on-chip Thermal Sensors in ASAP7 7nm Predictive PDK Vaibhav Verma Mandi Das Wole Jaiyeoba.
SCADA for Remote Industrial Plant
Krzysztof Górecki and Kalina Detka
Dynamic Frequency Scaling using on-chip Thermal Sensors in ASAP7 7nm Predictive PDK Vaibhav Verma Mandi Das Wole Jaiyeoba.
Current Source & Bias Circuits
Chapter 2 Circuit Elements
ECE 3336 Introduction to Circuits & Electronics
Reliable Structures and Wearable Systems Call for Multiphysics Simulation The goal is to understand multiphysics interactions at every stage of the development.
Presentation transcript:

Parameters Identification of Embedded PTAT Temperature Sensors for CMOS Circuits MIXDES '07. 14th International Conference on Mixed Design of Integrated Circuits and Systems, 2007 IEEE Speaker : Shun-He Huang

Outline Introduction PTAT circuit Layout of the test chip Simulations and Measurements Conclusion

Introduction The temperature sensors have become common elements in wide range of modern integrated circuits. The main parameters of temperature sensors are: temperature range, sensitivity, output range, linearity, accuracy. This paper describe the PTAT (proportional to absolute temperature) temperature sensors that are implemented in the test chip and dedicated to CMOS integrated circuits.

PTAT circuit △ V BE =V BE1 -V BE2 =V T ln(N) =KT/q*ln(N) I 2 =V T *ln(N)/R 1 I PTAT =I 5 =W 5 /W 4 *I 2

Parameters of the PTAT sensor

Layout of the test chip The locations and orientation of the test temperature sensors

Thermal chamber The photo of the device Enlarged test chip in the chamber

Simulation and Measurement The test chip suppy voltage is 5V. The measurements were performed in a thermal chamber for the temperature range of K. The achieved sensitivities of the temperature sensors are within following limits 3.44 to 4.82 mV/K.

Temperature vs. output voltage of the PTAT_1 sensor Output voltage vs. temperature of the PTAT_1 sensor

Temperature vs. output voltage of the sensors, which have orientation O1 Temperature vs. output voltage of the sensors, which have orientation O2

Temperature vs. output voltage of the sensors, which have orientation O3 Temperature vs. output voltage of the sensors, which have orientation O4

Exemplary results of temperature measurements for the PTAT_1 sensor

Conclusion The presented temperature sensors are one of the most important elements that are implemented in the test chip. Their parameters such as linearity and sensitivity are good enough to dedicated purposes. The self-heating effect and electro-thermal interactions also will be using this chip.