WP4: Radiation Hard Semiconductor Detectors - Status of activities - Michael Moll (PH-DT), Heinz Pernegger (PH-ADE) PH Theme 3 R&D meeting  WP4 – Challenge and Aim  WP4 – Work program, organization and participants  Status:  Pixel sensor evaluation/development ( in collaboration with ATLAS)  Strip sensor evaluation/development ( in collaboration with CMS)  Generic R&D ( in collaboration with RD50)  Build up of infrastructure ( common CERN infrastructure)  Work plan for 2009/2010 OUTLINE (Michael: 3-5 June 09: RD50 Workshop in Freiburg)

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Challenge: Sensors for the SLHC Trackers Note: Measured partly under different conditions! Lines to guide the eye (no modeling)! Strip sensors: max. cumulated fluence for LHC and SLHC Pixel sensors: max. cumulated fluence for LHC and SLHC  LHC detectors would fail in SLHC due to radiation damage  SLHC will need more radiation tolerant tracking detector concepts!

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Work program and structure of WP 4  1. Development and evaluation of pixel sensor concepts in framework of ATLAS Pixel Upgrade projects (H.Pernegger, A. La Rosa)  Evaluation of rad. tolerant sensors for innermost pixel layers in view of IBL and SLHC pixel: Pixel technologies: Silicon planar sensors, Silicon 3D sensors, Diamond sensors  WP4-Fellow A.La Rosa has become a driving force for organization and running of testbeam and irradiation campaigns for the ATLAS pixel community.  2. Development and evaluation of sensor concepts for CMS upgrade in framework of CMS Tracker Upgrade projects (M.Mannelli)  Sensor R&D program with HPK (Hamamatsu) to evaluate sensors based on various silicon sensor materials: FZ, MCZ and EPI silicon of n- and p-type and different thickness  Part of prg. for preproduction, qualification and large scale production of CMS phase II upgrade  3. Generic R&D on radiation tolerance of silicon sensors in framework of RD50 project (M.Moll)  Generic R&D on understanding of radiation damage in silicon  4. Build up of test equipment & infrastructure for PH common use (M.Moll, M. Fahrer)  Equipment: Probestations for CV/IV measurements of sensors  TCT/ b-source test system in climate controlled container WP4 is organized around 4 partly overlapping projects

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 – Participants Coordinator: Michael Moll (PH-DT) Project 1 (ATLAS):  WP4-Fellow: Alessandro La Rosa  Start: , PH-DT, Experiments: ATLAS / RD50  Supervisor: Heinz Pernegger (PH-ADE)  H.Pernegger, S.Roe, B. di Girolamo, D.Dobos Project 2 (CMS):  M. Mannelli Project 3 & 4 (RD50 & Test equipment):  WP4-Fellow: Manuel Fahrer  Start: , PH-DT, Experiments: RD50  Supervisor: Michael Moll (PH-DT)  Michael Moll, K.Kaska (PhD student), N.Pacifico (MCPAD ESR)  R.Fortin, A.Guipet (Technical support) Observers (presently no active role)  LHCb : Paula Collins  ALICE : Petra Riedler  TOTEM: Gennaro Ruggiero

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Pixel Sensors R&D at CERN Studies of different detector materials for (very) high radiation Close collaboration between CERN group on ATLAS upgrade, sensors RD groups (RD50, RD42) and CERN PH-DT (SLHC-PP / WP4 – Rad. Hard Detector). Interests in the following specific areas: 1.Performance evaluation of different sensor types with the sLHC front-end electronics (The interface sensors to electronics) 2.Characterization of sensor before & after irradiation in Lab with sLHC front-end electronics (using currently the ATLAS FE-I3 pixel chip) 3.Test beams with different sensor types. Input: A. La Rosa & H. Pernegger 5 CERN Participants: B. Di Girolamo, D. Dobos, A. La Rosa, H. Pernegger, S. Roe Collaboration: ATLAS RD on 3D-Si Detectors (since Sept. 08) Currently measure ATLAS layout 3D Stanford and 3D FBK/irst detectors ATLAS RD on Planar sensors (since Feb.09) Measurements on “standard” N-in-N detectors, N-in-P /thin next ATLAS RD on CVD Diamond pixel detector (since Feb. 08) Measurements on single-crystal single-chip module.

M.Moll, H.Pernegger – PH-WP Meeting – 4 June D-Si sensors 6/4/09A. La Rosa & H. Pernegger6  Started to do measurements on different detectors (FBK/irst 2E, 3E and 4E-types):  Leakage currents  Threshold scan (threshold and noise measurements)  Noise vs bias voltage  Source test with Am-241, Cd-109 and Sr90 Am241 Sr90 MPV ~14k2 e Thick. ~ 220um

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Planar Pixel Sensors  Planar Pro’s  n-on-n is a proven technology  n-on-p single sided process (costs) is being studied  Lower C det -> lower noise, lower in-time threshold for same power settings in the FE.  Partially depleted sensors collect charge  Con’s  Need for slim edges -> reduce dead area in Z  Need high bias voltage (~1000V bias ?)  N-on-p need high voltage insulation on chip side  Study n-in-n and n-in-p structures with DOFZ and MCz wafers  Develop “slim” edges (reduce guard ring width)  Submitted prototypes run at CiS (Erfurt) and plan participation in the VTT run with pixel structure T=-20 to -30 o C G. Casse et al., IEEE TNS, Vol. 55, No. 3, 2008, p Liverpool data not annealed I. Mandić et al, RESMDD 08 [G. Kramberger, IEEE NSS 2008, Dresden] expected in-time threshold

M.Moll, H.Pernegger – PH-WP Meeting – 4 June sc-CVD Diamond 6/4/09A. La Rosa & H. Pernegger8 1k6e- Noise ~ 145e- Lower capacitance  Lower Th (factor 2) & Noise But 50% Silicon signal ! After 0.7 x p/cm 2

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 (2010) – Proposal for common R&D within ATLAS/RD42/RD50 community Input: A. La Rosa & H. Pernegger 9 In the framework of SLHC-PP /WP4 (Rad. Hard Detector) project we would like to propose a Common ATLAS Pixel Sensors RD activity for tracking detector environment at CERN for So we propose to organize a: - Common lab characterization of bonded sensors at CERN ATLAS Pixel Lab; - Common irradiation test (proton at CERN and neutron at Ljubljana facility) at a high fluences (FEI3 compatible and after FEI4); - Common test-beam with MIP at CERN, before and after irradiation test. The aim of the activity would be give out a comparative overview about the next pixel sensor generation for tracking detector environment to facilitate a decision regarding their implementation in the ATLAS-IBL project and in the ATLAS-SLHC Pixel Upgrade. For 2010 we’d request a Doctoral Student (start date ) who could work full-time in the RD activity. Status of proposal: Distributed to potential partners

M.Moll, H.Pernegger – PH-WP Meeting – 4 June CMS SLHC Tracker - Thin Sensor R&D with HPK -  Phase I: Targeted R&D~  Establish required sensors characteristics & basic specifications  Single Source R&D with HPK agreed with CERN, together with framework for Market Survey & Procurements for Phase II & Phase III  Phase II: Preproduction and Qualification~  Finalize detailed specifications and QA protocols  Qualify for large scale production  Phase III: Large Scale Production~ Input: Marcello Mannelli Project is integral part of CMS Tracker upgrade Outline plan: WP4 participation in Phase I: coordination of project M.Mannelli (CMS & WP4) irradiation of sensors characterization of sensors (… requires still the set up of some specific equipment at CERN)

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Status of HPK Thin Sensor R&D Order  Order finally placed ~ February  Central European Consortium, CERN, INFN, PSI, US  Detailed specs agreed  Wafer procurement ongoing substrate type FZ 200um MCZ 200um FZ 100um epi 100umepi 75um FZ 300umTotal & Active Thicknesscarrierthinningcarrier P-on-N Production N-on-P Production p-spray N-on-P Production p-stop 'nd metal production P-on-N66 2'nd metal production N-on-P p- stop66 2'nd metal production N-on-P p- spray66 Total Input: Marcello Mannelli

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Status of HPK Thin Sensor R&D Order  Wafer Layout being finalized  Input for full set of designs provided to HPK  Waiting response from HPK Expect feed-back within coming weeks Input: Marcello Mannelli

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Schedule for HPK thin sensor R&D order  Finalize & Sign-off mask designs: 15 July  Expected Sensor Delivery: September ~ October  Sensor Qualification and Acceptance: September ~ December  Acceptance Test protocols and set-ups ready  Full Sensor Electrical & Functional Characterization, pre-irradiation: October ~ December  Characterization protocols and set-ups ready  Irradiation and characterization program in 2010 (January – December)  Proton, Neutron and mixed irradiations in 4 campaigns  Irradiation campaigns and test structures optimized for a) R > 4 cm and b) R > 22 cm  Draw conclusions December 2010 Input: Marcello Mannelli

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Status: Build up of test equipment  ‘Refurbishment’ of characterization tools in (done) (Laboratory for Departmental Silicon Facility & RD50 support)  Probe station for CV/IV measurements (4” chuck in dark box, CV/IV up to 1000V)  Simple TCT (Transient Charge Technique) (one channel, limited space and cooling capacity)  CCE with Sr 90 source (one channel,  s shaping, limited size of samples and limited cooling)  Pixel test stations in Bat 161 for sensor+FE chip measurments fully operational since early 2008  With source and electronic calibration  For 2010 on Pixel Tests Stands  Adaptation with new controller electronics for new FEI4 chip  Installation for lower temperature cooling (T~ -20C) for tests of irradiated pixel sensors  New TCT/CCE setup in (under commissioning, see next slide)  Two further installations planned:  Probe station with cold chuck for CV/IV measurements (status: designed, some parts machined, realization delayed due to high work load in PH-DT bonding lab & radiation facilities keeping technicians busy with ‘LHC relevant work’)  Probe station with characterization tools for measuring high number of CMS Tracker prototype sensors Detailed requirements to be specified by CMS Installation in DSF (Departmental Silicon Facility) Input M.Fahrer, M.Moll

M.Moll, H.Pernegger – PH-WP Meeting – 4 June TCT/CCE setup ( ) Characterization methods  TCT (Transient Charge Technique)  strip and pad sensors can be mounted  lasers illumination on both sides of sample  red + infrared laser (ps pulses)  CCE (Charge collection efficiency)  Sr 90 source  Scintillator based trigger  CV / IV  CV presently at 1, 10, 100 KHz (to be extended to variable frequency up to 1 MHz) Mechanics & Cooling  Cooled with silicon oil  vacuum or dry atmosphere to avoid formation of ice  Temperatures down to below -30  C (full range still to be tested)  Movable from outside  laser and source can be scanned over DUT  Modular system with flanshes  allows for easy mounting of additional feedthroughts Sample mounting & Electronics  SMA connectors (HF)  Bandwidth limitations due to scope: 3 GHz scope would be very useful  Sample boards (support PCB)  detectors to be bonded  good thermal & HF properties  Amplification  commercial solutions for single channels  ALIBAVA system for strip sensor CCE based on LHCb Beetle Chip 25ns shaping time, 128 channels

M.Moll, H.Pernegger – PH-WP Meeting – 4 June TCT/CCE Setup Sr 90 Source PCB support PM laser focuser cooling plate equipment movable against support plate

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Sensor Development within RD50  Strip sensors produced in framework of RD50 (~50 inst.)  WP4 participation in ongoing RD50 sensor characterizations sensors are partly already irradiated and ready for measurements at CERN  WP4 participation in new RD50 processing runs (next project: Sensor production with VTT in Finland / mask under design)  CIS Erfurt, Germany  2005/2006/2007 (RD50): Several runs with various epi 4” wafers only pad detectors  CNM Barcelona, Spain  2006 (RD50): 22 wafers (4”), (20 pad, 26 strip, 12 pixel),(p- and n-type),(MCZ, EPI, FZ)  2006 (RD50/RADMON): several wafers (4”), (100 pad), (p- and n-type),(MCZ, EPI, FZ)  HIP, Helsinki, Finland  2006 (RD50/RADMON): several wafers (4”), only pad devices, (n-type),(MCZ, EPI, FZ)  2006 (RD50) : pad devices, p-type MCz-Si wafers, 5 p-spray doses, Thermal Donor compensation  2006 (RD50) : full size strip detectors with 768 channels, n-type MCz-Si wafers  IRST, Trento, Italy  2004 (RD50/SMART): 20 wafers 4” (n-type), (MCZ, FZ, EPI), mini-strip, pad  m  2004 (RD50/SMART): 23 wafers 4” (p-type), (MCZ, FZ), two p-spray doses 3E12 amd 5E12 cm -2  2005 (RD50/SMART): 4” p-type EPI  2008 (RD50/SMART): new 4” run  Micron Semiconductor L.t.d (UK)  2006 (RD50): 4”, microstrip detectors on 140 and 300  m thick p-type FZ and DOFZ Si.  2006/2007 (RD50): 93 wafers, 6 inch wafers, (p- and n-type), (MCZ and FZ), (strip, pixel, pad)  Sintef, Oslo, Norway  2005 (RD50/US CMS Pixel) n-type MCZ and FZ Si Wafers Recent productions of Silicon Strip, Pixel and Pad detectors within RD50 (non exclusive list) : Details:

M.Moll, H.Pernegger – PH-WP Meeting – 4 June RD50 – Example of recent work “Mixed Irradiations” of MCZ silicon strip sensors  Mixed irradiations performed with:  (a) 5x10 14 neutrons (1 MeV equivalent fluence)  (b) 5x10 14 protons (1 MeV equivalent fluence)  FZ (n-in-n) Mixed Irradiation: Damage additive!  MCZ (n-in-n) Mixed Irradiation: Proton damage “compensates” part of neutron damage (N eff ) 500V Comment: NIEL scaling very strongly violated ! [T.Affolder, G.Casse et al.] Results from November 2008: Needs further study with both nMCz and pMCz substrates and differing mixed doses … hot topic for 2009/2010! More charge collected at 500V after additional irradiation!!!

M.Moll, H.Pernegger – PH-WP Meeting – 4 June p-type FZ Silicon Sensors  Higher voltage helps!  Which voltage can be applied? 500V 800V 1700V Data: G.Casse et al. (Liverpool) [RD50 06/2008 & VERTEX 2008] and I.Mandic et al. (Ljubljana) [RD50 06/2008]

M.Moll, H.Pernegger – PH-WP Meeting – 4 June MCz-n – 8e14 n/cm^2 (front ill. – The only possible) MCz-n – 8e14 n eq /cm^2 (front ill. – The only possible) neutrons protons Not ‘whole bulk’ type inversion, but still the junction on the back starts to prevail over the junction on the front – MCz-n irradiated with neutrons behaves in a similar way as FZ-n… With protons the situation is radically different. The two junctions are there, but the one on the front remains higher than the one forming on the back. Different kind of hadrons with different energies produce different development of the field profile in the detector. WP4 generic research: MCZ silicon Type inversion problem in MCz-Si with 24 GeV/c p + (2/2) under publication in NIMA

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 generic research: Epitaxial silicon Collected charge in EPI Collected charge in 150μm EPI n- and p-type after 24 GeV/c proton and 1 Mev neutron irradiation At low fluences a drop in the collected charge is observed in n-type material but not in p-type At the highest investigated neutron fluence, the collected charge is higher than expected from the behaviour at moderate fluences

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Workplan 2009 & 2010  Workplan “ATLAS pixels”:  Extension of setup to include new chip controller + pulsed laser source (under study) (2009/10)  Participation in ATLAS Pixel upgrade irradiations & testbeams (2009/2010)  Active participation in the procurement and assembly of pixel test modules (sensors bump bonded to ATLAS pixel chip) for lab and beam tests (2009/2010)  Contribute measurements on different pixel sensor technologies to ATLAS IBL (2009/10)  Workplan “sensors for CMS”  Participate in CMS work on sensor characterization before & after irradiation (2010)  Workplan on activities in framework of RD50  Submission of detector production run at VTT, Finland (2009)  Detailed study on reverseannealing in p-type silicon strip sensors (2009/2010)  Further studies on MCZ silicon in mixed irradiation fields (2009/2010)  Participate in RD50 sensor evaluation program (MCZ vs. FZ, n-vs.p-type) 2009/2010  Workplan on common infrastructure at CERN  Extension of TCT/CCE to use ALIBAVA system (LHCb Beetle chip)  Probe station for CMS and common use in DSF – (2009/2010)

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Manpower request 2010  2nd board 2009:  Fellow ship extensions La Rosa +6mo from Fahrer +6mo from  New Fellow (RD50) Starting  New Doctoral Student (Pixel Irradation & Testbeam support) Starting  1st board 2010  New Fellow Starting

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Spares

M.Moll, H.Pernegger – PH-WP Meeting – 4 June CCE/TCT : Instrumentation Optics  ps-Laser from PicoQuant  two heads: 661nm and 1055nm  low energetic pulses around 10pJ at lasing threshold most interesting  attenuated by micro screw directly at coupling  full and closed fiber solution with splitters and shutters  no manual intervention to fiber path during measurements  allows for reliable and reproducible measurements  focusing spot ~ 12μm on DUT at working distance of 23mm Environmental control  cooling down to -40°C  vacuum down to 0.06 mbar  multifunctional DAQ & control unit  T,H & other analog signals  low voltage  clock Prototype PCB  Not yet optimized for HF  external bias board for filtering and line matching  thus allows CV measurements as well  Gold-nickel plated  Roger’s PCB material for HF and good thermal conductivity

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 Contact with “clients” Pixel sensor development (H.Pernegger, A.La Rosa) “ATLAS environment” + “RD42 environment” for diamond sensor tests “Common CERN infrastructure” CMS sensors (M.Mannelli) “CMS environment”  ATLAS and CMS colleagues are part of the WP  Heinz (ATLAS) working in framework of approved ATLAS upgrade projects  Marcello (CMS) working in framework of approved CMS upgrade project  ALICE, LHCb and TOTEM  Contact persons for WP4 at CERN appointed, Invited to participate in WP4 meetings and in WP4 activities RD50 sensor characterization (M.Fahrer, M.Moll, K.Kaska, N.Pacifico) “RD50 environment” Strip and Pad sensor characterization tools (M.Fahrer, M.Moll)

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 generic research: MCZ silicon Type inversion problem in MCz-Si with 24 GeV/c p + (1/2) Naïf interpretation of V dep CV annealing curves: MCz-n silicon does not type invert with irradiation MCz-p silicon stays p-type at lowest fluences, but at higher ones show n-type annealing behavior ->Type inversion? Type inversion with annealing (n->p) Annealing curves still quite different from what we would expect by “standard” diode behavior (during type inversion V dep should go to zero) Irradiation with hadrons produces two different space charge regions… This effect seems more dramatic in oxygenated device -> MCz and EPI Silicon… It’s *not* anymore about whether the bulk inverts or not, but of the two junctions which one will prevail… ?

M.Moll, H.Pernegger – PH-WP Meeting – 4 June WP4 generic research: Epitaxial silicon Effective space charge in EPI After neutron irradiation n-type inverts to p-type After proton irradiation p-type inverts to n-type In 150μm EPI the depletion voltage charge rises quicker with proton than with neutron irradiation. After proton irradiation the space charge is positive After neutron irradiation the space charge is negative under publication in NIMA

M.Moll, H.Pernegger – PH-WP Meeting – 4 June Deliverables 2008 & 2009  Main deliverables for 2008  Pixel sensor test setup (Heinz/Alessandro)  TCT/CCE test setup for strip sensors (Manuel/Michael)  Submission of HPK Sensor Order & Work plan for corresponding measurements at CERN in 2009 (Marcello / CMS project)  Main deliverables for 2009  Report on lab characterization ( 90 Sr source/TCT) of irradiated sensors Performance before/after irradiation; evaluation of procurement, cost and integration issues for different sensor types Pixel: 3D, Diamond, Planar Strip: RD50 and CMS sensors (p- and n- MCZ, FZ, EPI, thick vs. thin)  Test beam results on pixel sensors (3D, Diamond, Planar sensors) (to be produced in framework of ATLAS Pixel upgrade activities/test beams) on strip sensors (MCZ vs. FZ, thick vs. thin) (to be produced in framework of CMS and/or RD50 upgrade activities/test beams)  Probe station in DSF for sensor characterization (CV/IV) (CERN common infrastructure!)