Bipolar Junction Transistor (BJT) Chapter 12 31 March and 2 April 2014 Operation involves both electrons and holes, so is called “bipolar” Junction E-B.

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Presentation transcript:

Bipolar Junction Transistor (BJT) Chapter March and 2 April 2014 Operation involves both electrons and holes, so is called “bipolar” Junction E-B is forward biased, so electrons from the E (emitter) to the B (base) Junction B-C is reverse biased, so minority carrier electron concentration in B region at the B-C edge is close to zero. In the B region, there is large gradient of electron (minority carrier) concentration; the electron injected from E region will diffuse across the B region into the B-C space charge region An electric field due to the B-C reverse bias will sweep the electrons to the C (collector) region The B regions must be thinner than the minority carrier diffusion length in order to make as many electrons as possible to reach the C region.

Operation modes of BJT 12 ModeBE junctionBC junctionCurrents ActiveForwardReversei c = βi B CutoffReverse i E = i B = i C =0 SaturationForward i c < βi B Reverse activeReverseForwardi c = β R i B Analysis: Active mode: most useful bias mode when using a bipolar junction transistor as an amplifier Cutoff mode: no electron injected to the base, all currents are zero. Used as “off” state in digital circuits or open switch Saturation mode: used as “on” state in digital circuits or closed switch Reverse active mode: emitter and collector regions switch roles. Seldom used.