M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 1 A measurement of Lorentz angle of rad-hard pixel sensors Dipartimento.

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Presentation transcript:

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 1 A measurement of Lorentz angle of rad-hard pixel sensors Dipartimento di Fisica dell’Università di Milano for the ATLAS Pixel Collaboration Mario Aleppo International Workshop on Semiconductor Pixels Detectors for Particles and X-rays Pixel2000

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 2 Partecipating Institutes CanadaCanada –University of Toronto Czech RepublicCzech Republic –Academy of Sciences - Institue of Physics of Prague, Charles University of Prague, Czech Technical University of Prague FranceFrance –CPPM, Marseille GermanyGermany –Bonn University, Dortmund University, Siegen University, Bergische University - Wuppertal, MPI Munich (R&D only) ItalyItaly –INFN and University of Genova, INFN and University of Milano, INFN and University of Udine NetherlandsNetherlands –NIKHEF - Amsterdam USAUSA –University of New York - Albany, LBL and University of California - Berkeley, University of New Mexico - Albuquerque, University of Oklahoma-Norman, University of California - Santa Cruz, University of Wisconsin - Madison, Ohio State University- Columbus

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 3 Test sensors are irradiated at a fluence of 5  n eq /cm 2 and 1  n eq /cm 2. Every chip is a matrix of 18 columns and 160 rows Pixel size is 50   400  Thickness 280     E

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 4 Test beam setup

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 5 The importance of the Lorentz angle measurement Modules are tilted to take into account the effect of Lorentz angle on the charge drift. Charge sharing depends upon the Lorentz angle. Charge drifts with an angle  L respect to the direction of the Electric field in presence of a Magnetic field This affects detector performances: space resolution, efficiency and occupancy. Measurement of the mean cluster size as a function of the angle

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 6  L =5.9 0  L =2.6 0  L =9.0 0  L =3.1 0

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 7 Lorentz angle model NIFI HI  150VHI  600V

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 8 The Electric field is not constant, due to the spatial charge. The charge distribution is assumed to be uniform. E E y 2 V/d (V + V d )/d (V  V d )/d n type p type n+n+ n+n+ n+n+ n+n+ n+n+ n+n+ n+n+ n+n+ y

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 9 An effective Lorentz angle has been defined as the angle corresponding to the minimum cluster size. yy xx

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 10 Lorentz angle measurement Measured mean cluster size for different angles with B on (1.4 Tesla) and B off Data with B off are used to check systematic effects Fits with a parabola Comparison with results obtained with the model: –Depletion taken from data –Threshold fitted from data taken with B off

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 11 Depletion depth measurement Performed rotating the sensor around the pixel axis parallel to the long size of pixels. Strategy based on the determination of the entrance and exit points of tracks Charge segment depth plots

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 12

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 13

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 14 Depletion depth results

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 15 Lorentz angle fits Predicted value  L =8.6 0  Measured value  L =3.1 0   Predicted value  L =2.9 0  Measured value  L =9.0 0   0.5 0

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 16 Lorentz angle fits Measured value  L =2.6 0   Predicted value  L =3.9 0  Measured value  L =5.9 0   Predicted value  L =5.3 0  0.5 0

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 17 Lorentz angle results

M. Aleppo - A measurement of Lorentz angle of rad-hard pixel sensors - Pixel 2000 Genova 18 Conclusions Lorentz angle of ATLAS Pixel rad-hard sensors has been measured. The observed behavior is well explained by a model based on charge drift in silicon. The Lorentz angle ( through the mobility ) depends upon the Electric field inside sensors. At the operating conditions for ATLAS pixel sensor we expect a Lorentz angle of 13 0 at the beginning of data taking. After 10 years we expected a Lorentz angle of 4 0. Depletion depth of sensors irradiated at two different fluences has been measured and characterized as a function of the operation voltage.