Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Detector Characteristics

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Detector Details

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Vital Statistics Overall detector area: 6.4 cm by 6.4 cm Wafer thickness: 400  m Silicon: n-type substrate, p-type strips Large substrate resistivity: 5-8 k  Number of strips: 320 Strip pitch: 194  m Strip width: 50  m AC coupled strip readout

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Some Considerations in Estimating Energy from TOT Detector: Energy deposited => Charge Q in detector –Landau Distribution of deposited energy –Shot noise Preamplifier and Front End Electronics –Threshold Calibration –Charge Saturation: plateau in TOT vs. Input charge response Controller and Readout => TOT Estimated charge Q => Estimated particle energy

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Leakage Current Possible source of detector noise –Minimized with care. Usually a small noise source –Shot noise. Mainly affects long shaping time. Temperature dependence: –Leakage current doubles for each 7°C rise in detector temperature Bias voltage dependence: –Illustrated on following chart

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 I-V Characteristics HKM Factory Data, Detector 312. Factory Data for other 3 detectors similar. 25°C SCIPP Data, Apr. 25, °C

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Energy Deposition Comparison of Landau distribution (theoretical line) with ToT data from GLAST

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Two MIP Events Comparison of theoretical and observed energy deposition for possibility of 2 tracks passing through the same strip