Simulation of the Electrostatic potential and the Electric Field in Pixel device By Joseph Manungu High Energy Physics Group meeting Dept of Physics Syracuse.

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Presentation transcript:

Simulation of the Electrostatic potential and the Electric Field in Pixel device By Joseph Manungu High Energy Physics Group meeting Dept of Physics Syracuse University

Outlines 1. Static simulation of P-stop 2. Static simulation of P-spray 3. Extract the maximum magnitude of lateral electric for both types 4. Compare our results with the ones obtained by T. Rohe & al.

Pixel ? The pixel cells are the n+ implants which are placed on n-bulk material while the back side consists of a large diode surrounded by a multi guard ring structure.

Geometry p+ -implant n+ -implant

Electrostatic potential and the Electric Field lines

Magnification of the Electric Field lines from 0 to 50 microns in y- direction

Problems encountered with the P-spray Non reproducibility of the doping profile for the p+ implantation We are thinking of using error doping profile function or any other kind of the doping profile; Pearson doping profile didn’t help at all. We are open to suggestions and critiques.

Next presentation

Electrostatic potential

Electrostatic potential and the Electric Field lines

Magnification of the Electric Field lines in the y-direction

Cuts of the electrostatic potentials