UNIVERSAL COLLEGE OF ENGG. AND TECH.. B IPOLAR J UNCTION T RANSISTORS EE314.

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Presentation transcript:

UNIVERSAL COLLEGE OF ENGG. AND TECH.

B IPOLAR J UNCTION T RANSISTORS EE314

The transistor was probably the most important invention of the 20th Century, and the story behind the invention is one of clashing egos and top secret research. First - BJTs Reference: Bell Labs Museum B. G. Streetman & S. Banerjee ‘Solid State Electronic Devices’, Prentice Hall 1999.

Point-Contact Transistor – first transistor ever made

First Bipolar Junction Transistors W. Shockley invented the p-n junction transistor The physically relevant region is moved to the bulk of the material

Understanding of BJT force – voltage/current water flow – current - amplification

Basic models of BJT Diode npn transistor pnp transistor

Basic models of BJT

BJTs – Basic Configurations Fluid Flow Analogy Difference between FET (field effect transistor) and BJT Technology of BJTs pnp BJT npn BJT

BJTs – Practical Aspects Heat sink

BJTs – Testing

R ECALL P - N JUNCTION P N W V appl > N P W V appl < Forward bias, + on P, - on N (Shrink W, V bi ) Allow holes to jump over barrier into N region as minority carriers Reverse bias, + on N, - on P (Expand W, V bi ) Remove holes and electrons away from depletion region I V I V

B IPOLAR J UNCTION T RANSISTORS : B ASICS IEIE IBIB ICIC I E = I B + I C ………(KCL) V EC = V EB + V BC ……… (KVL)

BJT CONFIGURATIONS ECE 663 GAIN CONFIG

B IPOLAR J UNCTION T RANSISTORS : B ASICS ECE 663 Bias ModeE-B JunctionC-B Junction SaturationForward ActiveForwardReverse InvertedReverseForward CutoffReverse

BJT F ABRICATION ECE 663

PNP TRANSISTOR AMPLIFIER ACTION ECE 663 IN (small) OUT (large) Clearly this works in common emitter configuration

C OMMON B ASE DC CURRENT GAIN - PNP Common Base – Active Bias mode: ECE 663 I C =  DC I E + I CB0 I Cp =  T I Ep =  T  I E I C =  T  I E + I Cn  DC =  T 

C OMMON E MITTER DC CURRENT GAIN - PNP Common Emitter – Active Bias mode: ECE 663 I E =  DC I B + I CE0  DC =  DC /(1-  DC ) IEIE IBIB ICIC I C =  DC I E + I CB0 =  DC (I C + I B ) + I CB0 I C =  DC I B + I CB0 1-  DC GAIN !!

C OMMON E MITTER DC CURRENT GAIN - PNP ECE 663 Thin base will make  T  1 Highly doped P region will make   1

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