Modulight 1310 nm FP laser diode products for digital applications

Modulight 1310 nm FP laser products Laser product family for different needs and applications: ML-C-1310-FP-10G laser chip 10 Gb/s FP laser chip for 10G transponder and transceviver manufacturers SONET OC-192 VSR (< 600 m) SDH STM VSR-64.1r, STM I-64.1r (< 600 m) OIF VSR-4, (< 600m) 10 Gb/s over FDDI-grade MM fiber ( m)

Modulight 1310 nm FP laser products ML-C-1310-FP-2G5 Bare 2.5 Gb/s FP die for full packaging and assembly lines SONET OC-48 SR / SDH STM I Gb/s Gigabit Ethernet 1.06 Gb/s / Gb/s Fibre Channel ML-T-1310-FP-2G5-F/B-X ML-C-1310-FP-2G5 laser chip in a TO-56 can for 2.5 Gb/s and 1.25 Gb/s TOSA and transceiver manufacturers Available with flat window and ball lens caps Ask for custom caps

Modulight 1310 nm FP laser products ML-COAX-1310-FP-2G5-2 Reliable coaxial fiber pigtail module with ML-C-1310-FP-2G5 chip 2 mW output power Selectable connector ML-W-1310-FP-2G nm FP epiwafers 1310 nm FP epiwafers with Modulight’s high-performance design or with customer’s own design

Competitive advantages Narrow spectral linewidth enables longer transmission distances with high-speed operation Strong core material design with superior temperature behavior for uncooled applications Controlled beam characteristics for optimal coupling efficiency Controlled design and manufacturing process from epiwafer to TO-can level Reliable long-term chip supply Custom features available with short lead time to production

ML-C-1310-FP-10G –10 Gb/s FP Proven robust manufacturing process inherited from 2.5G product 10 mW kink-free output power up to 85°C Narrow linewidth (typ. RMS 1 nm, -20 dB noise floor) reduces chromatic dispersion High-speed operation also at elevated temperatures Alignment features for automated pattern recognition Superior characteristic temperature of >91K 25-85°C, >88K 15-95°C (cw)

ML-C-1310-FP-10G – high-temperature operation 10 mW kink-free single transverse mode cw power 5  serial resistance Stable slope efficiency Example data: 10 devices from different laser bars

ML-C-1310-FP-10G – good fiber coupling Good beam shape for optimal coupling efficiency Typical beam ellipticity ~1.4 Horizontal FWHM 24.33° Vertical FWHM 34.42°

ML-C-1310-FP-10G – reliability

ML-C-1310-FP-10G – S21

ML-C-1310-FP-10G –narrow spectrum RMS = 1,34nmRMS = 1,20nm Excellent linewidth in broad temperature range

ML-C-1310-FP-10G – eye pattern Rise time 39.6 ps (20-80) Fall time 46.7 ps (80-20) Jitter pk-pk ps Jitter rms 3.31 ps S/N ER > 5 dB (Modulight 10Gb/s die in customer 10 Gb/s TO-can, Ib = 40 mA, room temperature, filtered)

ML-C-1310-FP-10G – eye pattern Gb/s Eye-Pattern [N= ], 10GBASE-R mask, 20% margin (example data from customer sub-assembly, Iljin Corp.)

ML-C-1310-FP-2G nm bare FP laser die for up to 2.5 Gb/s digital applications For customers with own packaging and assembly lines Reliable AlGaInAs/InP epi structure with Modulight’s high-performance design 7 mW rated output power (to be upgraded) >2.5 Gb/s operation °C Low <5  serial resistance Automated testing in Modulight’s verification process at 25°C and 85°C I-L curve (Ith, Iop, slope, kink power) I-V curve (Vop, Rs) Spectral measurement (Central wavelength, RMS spectral width) Beam shape (ThetaV, ThetaH)

ML-C-1310-FP-2G5 Narrower (<1 nm) spectral width than for competing 1310 nm FP laser products  Reduced chromatic dispersion  Longer transmission distances than with conventional MLM lasers

Developed for mass production Modulight’s chip products developed to match customers’ automated process lines Die-shear force typ. 390 g Ball shear force typ. 48 g Wire pull strength >6 g Metal reflection and dicing quality suitable for pattern recognition methods Good beam shape for optimal coupling efficiency Typical beam ellipticity ~1.4 (32:23)

Unbeaten temperature performance Best 2.5 Gb/s 1310 nm high- temperature FP laser chip in the market Suitable for uncooled transmitters, transceivers and transponders Best high-temperature performance Slope efficiency typ °C Key to low cost through simple packaging Higher manufacturing and design tolerances for customers

ML-T-1310-FP-2G5-F/B-X Modulight’s high-performance 2.5 Gb/s nm 1310 nm FP chip in a TO-56 can Available with flat window and ball lens caps Ask for custom caps Ball lens cap can with low beam divergence (<10°) Stable focal distance 100% gross leak test for hermeticity µA monitor PD current 0.30 W/A slope efficiency 25°C (cw, with ball lens cap) 0.22 W/A slope efficiency 85°C (cw, with ball lens cap)

Customer interface – quality of service Fast customer response Modulight’s committed technical and sales personnel in your service for after-sales support Product-specific quality plans available for customer review Describing QC/QA activities in Modulight’s production in detail Exact description of all verification and validation criteria Easy access to production and verification data through Modulight’s manufacturing database Delivery of all verification data to customer in electrical format Full process traceability

ML-C-1310-FP-2G5 – reliability

ML-C-1310-FP-2G5 – threshold current 25°C85°C 2 nd derivative method

ML-C-1310-FP-2G5 – frequency response

ML-C-1310-FP-2G5 – 2.5 Gb/s eye pattern Gb/s, Iop = 30 mA, ext ratio 9.24 dB. OC-48/STM-16 mask, 20% margin (Modulight 2.5 Gb/s die in customer sub-assembly, Iljin Corp.)

ML-C-1310-FP-2G5 – for 1.25 Gb/s and 2.5 Gb/s Gb/s, OC-48/STM-16 filter (Modulight 2.5 Gb/s die in customer SFP transceiver) ML-C-1310-FP-2G5 –2.5 Gb/s eye pattern

ML-T-1310-FP-2G5-F-3 55 km Gigabit Ethernet transmission, 13.5 dB extinction ratio, P out = -0.2 dBm 25 °C ambient temperature (T c = 41°C) λ= ,  λ = 0.88 nm Modulight TO-can in customer GigE transceiver sub-assembly Modulated spectrumEye pattern after 55 km transmission

ML-T-1310-FP-2G5-F-3 40 km Gigabit Ethernet transmission, 9.9 dB extinction ratio, P out = -0.8 dBm 70°C deg ambient temperature (T c = 87.5°C) λ= ,  λ = 0.79 nm Modulight TO-can in customer GigE transceiver sub-assembly Eye pattern after 40 km transmissionModulated spectrum

ML-T-1310-FP-2G5-F-3 – fiber-coupled power as a function of temperature ML-T-1310-FP-2G5-F-3Major Japanese competitor 1310 nm TO-can Data from customer transceiver sub-assembly – competitor product shows inability in following monitor diode output current at high temperatures due to saturation of slope efficiency

1310 nm FP epiwafers Use Modulight’s standard production design in your own device process or Base your own FP or DFB design on Modulight’s proprietary active area design Exploit Modulight’s processing services for broad-area characterisation or device-level epiwafer qualification