A. Gola, A. Ferri, C. Piemonte, A. Picciotto, T. Pro, N. Serra, A

Slides:



Advertisements
Similar presentations
New developments of Silicon Photomultipliers (for PET systems)
Advertisements

PET Design: Simulation Studies using GEANT4 and GATE - Status Report - Martin Göttlich DESY.
Recent news about SiPM based applications R&D in DESY Nicola D’Ascenzo University of Hamburg - DESY.
Fiber-Optic Communications
Design and test of a high-speed beam monitor for hardon therapy H. Pernegger on behalf of Erich Griesmayer Fachhochschule Wr. Neustadt/Fotec Austria (H.
ECAL electronics Guido Haefeli, Lausanne PEBS meeting 10.Jan
The Transverse detector is made of an array of 256 scintillating fibers coupled to Avalanche PhotoDiodes (APD). The small size of the fibers (5X5mm) results.
Characterization of Silicon Photomultipliers for beam loss monitors Lee Liverpool University weekly meeting.
Report on SiPM Tests SiPM as a alternative photo detector to replace PMT. Qauntify basic characteristics Measure Energy, Timing resolution Develop simulation.
H.-G. Moser Max-Planck-Institut for Physics, Munich CALOR 06 Chicago June 5-9, 2006 Silicon Photomultiplier, a new device for low light level photon detection.
CALICE Meeting DESY ITEP&MEPhI status report on tile production and R&D activities Michael Danilov ITEP.
C. Piemonte 1 Development of SiPMs a FBK-irst C.Piemonte FBK – Fondazione Bruno Kessler, Trento, Italy
Salvatore Tudisco The new generation of SPAD Single Photon Avalanche Diodes arrays I Workshop on Photon Detection - Perugia 2007 LNS LNS.
SiPM: Development and Applications
Silicon Photomultipliers
Time Resolution of Thin LGADs Results from the Nov 2014 Beam Test at CERN Improvement in hand: Sensor Capacitance Measurements with  Front TCT 1 Hartmut.
Scintillator tile-SiPM system development for CALICE Engineering AHCAL Prototype Michael Danilov, ITEP & CALICE LCWS10 Beijing March 2010 Outline New scintillator.
SiPM technology at FBK C. Piemonte
Optimization of Detectors for Time of Flight PET Marek Moszyński, Tomasz Szczęśniak, Soltan Institute for Nuclear Studies, Otwock-Świerk, Poland.
Development of Multi-Pixel Photon Counters(MPPC) Makoto Taguchi Kyoto University.
Electronic Noise Noise phenomena Device noise models
Status of photon sensor study at Niigata University -- SiPM and MPPC -- Photon sensor mini workshop 05/9/16 University Niigata University.
1 SiPM studies: Highlighting current equipment and immediate plans Lee BLM Quasar working group.
Timing Studies of Hamamatsu MPPCs and MEPhI SiPM Samples Bob Wagner, Gary Drake, Patrick DeLurgio Argonne National Laboratory Qingguo Xie Department of.
28 June 2007G. Pauletta: ALCPG Tests of IRST SiPMs G. Pauletta Univ. & I.N.F.N. Udine Outline 1.IRST SiPMs : baseline characteristics 2.first application.
Optical Receivers Theory and Operation
1 CPTA Center for Prospective Technologies & Aparatus ©2009 – Photonique SA (DMC) APD-Pixel Photo-Diodes for Frontier Detector Systems - GSI Darmstadt.
Prospects to Use Silicon Photomultipliers for the Astroparticle Physics Experiments EUSO and MAGIC A. Nepomuk Otte Max-Planck-Institut für Physik München.
SiPM for CBM Michael Danilov ITEP(Moscow) Muon Detector and/or Preshower CBM Meeting ITEP
Digitization in EMC simulation Dmytro Melnychuk, Soltan Institute for Nuclear Studies, Warsaw, Poland.
Timing in Thick Silicon Detectors Andrej Studen, University of Michigan, CIMA collaboration.
1 RGB_HD SiPM Red-Green-Blue High Density SiPM SiPM: size: 4x4mm 2 cell size: 30x30um 2 # cells: ~17000 SiPM: size: 2.2x2.2mm 2 cell size: 15x15um 2 #
SiPM from ST-Microelectronics Nepomuk Otte & Hector Romo Santa Cruz Institute for Particle Physics University of California, Santa Cruz
Jean-François Genat Fast Timing Workshop June 8-10th 2015 FZU Prague Timing Methods with Fast Integrated Technologies 1.
Study of gas mixture containing SF6 for the OPERA RPCs A.Paoloni, A. Mengucci (LNF)
G. Zappala’ – Vienna Conference on Instrumentation 2016
Update on works with SiPMs at Pisa Matteo Morrocchi.
Upgrade of the MEG liquid xenon calorimeter with VUV-light sensitive large area SiPMs Kei Ieki for the MEG-II collaboration 1 II.
Silicon Photomultiplier Development at GRAPES-3 K.C.Ravindran T.I.F.R, OOTY WAPP 2010 Worshop On behalf of GRAPES-3 Collaboration.
Comparison of the AC and DC coupled pixels sensors read out with FE-I4 electronics Gianluigi Casse*, Marko Milovanovic, Paul Dervan, Ilya Tsurin 22/06/20161.
SiPM Workshop EU-FP7(HP3), Vienna, 16 Feb F.G. H.O. Study of scintillator detectors time resolution with different SiPM readout on T10 test beam.
PHOTOTUBE SCANNING SETUP AT THE UNIVERSITY OF MARYLAND Doug Roberts U of Maryland, College Park.
Pixel Sensors for the Mu3e Detector Dirk Wiedner on behalf of Mu3e February Dirk Wiedner PSI 2/15.
Fondazione Bruno Kessler Centre for Materials and Microsystems.
D. Renker, PSI G-APD Workshop GSI, PAUL SCHERRER INSTITUT Problems in the Development of Geiger- mode Avalanche Photodiodes Dieter Renker Paul Scherrer.
A Compact, High Density Gamma-Detection Module for Time-of-Flight Measurements in PET Applications I. Sacco, P. Fischer, M. Ritzert Institute for Computer.
P. Lecoq CERN2 February ENVISION WP2 Meeting CERN Group contribution to ENVISION WP2 Paul Lecoq CERN, Geneva.
Silicon Photomultiplier (SiPM) Readout Application Specific Integrated Chip (ASIC) for Timing Huangshan Chen.
 13 Readout Electronics A First Look 28-Jan-2004.
Performance of scintillation pixel detectors with MPPC read-out and digital signal processing Mihael Makek with D. Bosnar, V. Gačić, L. Pavelić, P. Šenjug.
CEPC ScECAL Optimization for the 3th CEPC Physics Software Meeting
Fabio, Francesco, Francesco and Nicola INFN and University Bari
Performance of LYSO and CeBr3 crystals readout by SiPM
Characterization and modelling of signal dynamics in 3D-DDTC detectors
NUV-SiPM short technology description
FINAL YEAR PROJECT 4SSCZ
Fast SiPM readout for PET
OPTICAL SOURCE : Light Emitting Diodes (LEDs)
Optical Crosstalk in SiPM
Analysis of FADC single-crystal data
A First Look J. Pilcher 12-Mar-2004
K. Sedlak, A. Stoykov, R. Scheuermann
On behalf of the GECAM group
X. Zhu1, 3, Z. Deng1, 3, A. Lan2, X. Sun2, Y. Liu1, 3, Y. Shao2
md-NUV PET project meeting
UCM-ELEC group Members involved in the work described here
Readout Electronics for Pixel Sensors
CAL crosstalk issues and their implications
Readout Electronics for Pixel Sensors
Readout Electronics for Pixel Sensors
Presentation transcript:

Optimization of timing performance of large-area FBK SiPMs in the scintillation light readout. A. Gola, A. Ferri, C. Piemonte, A. Picciotto, T. Pro, N. Serra, A. Tarolli, N. Zorzi http://srs.fbk.eu

Overview of the SiPM technology at FBK

FBK technology evolution Original technology 2006 RGB-SiPM (Red-Green-Blue SiPM) excellent breakdown voltage uniformity low breakdown voltage temperature dependence (gain variation < 1%/C) higher efficiency lower noise 2010-11 NUV-SiPM (Near-UV SiPM) excellent breakdown voltage uniformity low breakdown voltage temperature dependence (gain variation < 1%/C) high efficiency in the near-ultraviolet very low dark noise 2012 2012 RGB-SiPM_HD (Red-Green-Blue SiPM – high density) small cell size with high fill factor: - high dynamic range - low excess noise factor 3

RGB-SiPM HD SiPM: size: 4x4mm2 cell size: 30x30um2 # cells: ~17000 Redesigned cell border, for obtaining small cells with high Fill Factor (FF). The 15 um cell RGB-HD has the same FF of the 50 um cell RGB technology. SiPM: size: 4x4mm2 cell size: 30x30um2 # cells: ~17000 SiPM: size: 2.2x2.2mm2 cell size: 15x15um2 # cells: 21316 Fill factor = 74% Fill factor = 48% 4

RGB-SiPM HD 2.2x2.2mm2 15um very short decay!! Response to fast light pulse from LED Photo-detection efficiency measurement by Musienko @ CERN t = 9ns very short decay!! 5

NUV-SiPM Increased PDE at low λ Very low primary DCR The NUV SiPM is based on a p-on-n junction, for increased PDE at short wavelengths. PDE vs. wavelength for a NUV-SiPM and RGB-SiPM with 50x50um2 cell, 42% fill factor. Increased PDE at low λ NUV-SiPM: 1x1mm2 50x50um2.Total and primary dark count rate at 0.5 phe. Very low primary DCR 6

Effects of the SiPM noise: Dark Count Rate

Effect of dark noise in LED Leading Edge Discriminator (LED) is commonly used for time pick-off with PMTs. long tail of the dark events high dark rate baseline fluctuation  time jitter high LED threshold  worse photon stat. In large area SiPMs the dark rate can be quite high and consequently also the effect described above.

SiPM Signal filtering: DLED Original signal Delayed replica Differential signal We exploit the difference between rise time and decay time to obtain a signal: “free” from baseline fluctuations identical initial part of the gamma signal Then, we use the LED on the differential signal s2(t). Important: electronic noise is ~ √2 higher in differential signal so its effect must be negligible for DLED to be effective

Experimental set-up Digital scope (1GHz, 10GSa/s, 8 bit ADC) current feedback amplifier current feedback amplifier Na22 source SiPM + LYSO Digital scope (1GHz, 10GSa/s, 8 bit ADC) Energy channels Timing channels for energy eval same signals in a very expanded scale to reduce quantization noise dark events 4ns delay 1MW 50W Ch1 Ch2 Ch3 Ch4

Detectors tested Detector “cube” SiPMs used 3x3mm2 4x4mm2 LYSO crystal 3x3x5mm3 height ~ side to test ultimate SiPM performance SiPMs used 3x3mm2 4x4mm2 67um cell-size produced by FBK, Trento Detector “PET” LYSO crystal 3x3x15mm3 height ~ 5 x side real PET configuration (timing affected by light propagation in crystal)

DLED vs. LED performance Detector cube, 3x3mm2 SiPM Low over-voltage: low gain, low dark rate  electronic noise dominates  DLED slightly worse than LED T=20C Medium over-voltage: gain increases dark noise ampl. > elect. noise LED is flat (increase of PDE is compensated by increase of noise) DLED improves following PDE LED DLED High over-voltage: high dark noise/rate LED starts deteriorating DLED still improves for high PDE and good noise compensation DLED DT=500ps good up to 1ns

CRT vs. Temperature LED DLED Detector cube 3x3mm2 SiPM LED strongly improves with temperature because of noise (DCR) reduction. DLED improves less with temperature and only at high over-voltages. LED@-20C is almost equivalent to DLED@20C

Hardware Implementation The DLED is difficult to integrate in an ASIC  Pole-Zero Compensation. The passive recharge of the cells of the SiPM corresponds to a single real pole in the pulse response of the detector in the frequency domain.  Pole cancellation through a zero at the same frequency in the front end. Non Compensated   Compensated

The PZ in the Time Domain   Simple circuit implementation of the PZ method. The tails have equal amplitudes and cancel each other if:

CRT with PZ Detector cube 3x3mm2 SiPM The results are comparable or slightly better with the PZ method than with DLED  less noise without numerical differentiation. DLED sw PZ hw 20C -20C Detector cube 3x3mm2 SiPM

Effects of the SiPM noise: Optical Cross-talk Amplification

CRT limit at high over-voltage With Pole-Zero noise compensation and smaller detectors we observe almost no dependence of the measured CRT on the DCR of the detector  timing resolution should be limited by PDE of the device only. PZ method 1.8x1.8x2 mm3 LYSO 2x2 mm2 SiPM CRT limited by the front-end electronic noise. CRT divergence at high over-voltages. CRT limited by the SiPM PDE (light collection statistics). Very good value!

CRT limit at high over-voltage The optimum CRT value is not obtained at maximum PDE. There is some other effect that prevents to operate the device at higher over-voltage and PDE.

Optical Cross-talk Amplification The scintillator reflects the photons emitted by the hot carriers during the avalanche. Increase in the collection efficiency of the optical cross-talk photons.

Reverse SiPM Current The phenomenon can be easily observed from the reverse current of the device, measured with and without the scintillator. 3 cases: No scintillator 2x2x2 mm3 LYSO 2x2x10 mm3 LYSO 3 temperatures: 20°C, 0°C, -20°C The current increase is larger for the shorter scintillator.

DCR amplification Extremely high values! The process rapidly diverges. It is possible to define a DCR amplification coefficient due to the scintillator enhanced cross-talk. There is no amplification if the LYSO top face is covered with black paint. Extremely high values! The process rapidly diverges.

Correlation with Timing The γ coefficient shows an almost perfect correlation with the CRT. The PZ filter can no longer compensate for the detector noise. Reduction of the effective PDE, due to cells busy with DCR. Basically, the SiPM stops working.

Possible Solutions For reaching higher over-voltage and PDE, it is necessary to reduce the amount of cross-talk: Color filters in the scintillator Suppression of external cross-talk Optical Trenches and Double Junction Suppression of internal cross-talk (total CT is determined by both internal and external components) Smaller cells with smaller gain but same fill-factor Updated fabrication technology and cell-edge layout

Conclusion We have demonstrated that the effect of dark noise on timing measurements with SiPM coupled to LYSO crystal can be largely compensated. The baseline compensation can be implemented with a simple, ASIC compatible, analog circuit. Once the effects of the DCR are removed, we can observe a different phenomenon, limiting the timing resolution of the SiPM, related to the optical cross-talk, increased by the scintillator. Possible solutions are under investigation, however the HD technology seems a very promising option.

Acknowledgments HyperImage project SUBLIMA project FBK-INFN MEMS2 agreement

Back-up slides

In the next slides: CRT vs Temperature Threshold level crystal height SiPM size

Optimum Threshold level Detector cube 3x3mm2 SiPM LED DLED 20C 0C 20C 0C -20C -20C 20C 0C -20C 20C 0C -20C

Leading Edge Discriminator LED is widely used in PMT-based systems What is the effect of noise on timing? signal distortion forced to use a higher threshold HF noise furthermore jitter baseline fluctuation LF noise jitter for worse photon statistics jitter

First approach: SiPM signal shape SCR of a 4x4mm2 SiPM In this case we increase both the quenching resistor and the quenching capacitor in order to enhance the fast component and decrease the slow one. fast component slow tail - SiPM 4x4mm2 - LYSO 3x3x5mm3 - LED Steeper rising edge of the gamma pulse and lower baseline fluctuation

Example + initial part of gamma ray signal preserved original gamma signals differential + initial part of gamma ray signal preserved expanded y scale + baseline compensated; + electronic noise increased;

DLED – comparison SiPM 3x3mm2 Detector cube Detector PET SiPM 4x4mm2