PEP1 Process Condition Chemicals Pre Clean Sputter Coater Stepper Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A) MoW,AlNd Target,Kr Coater Photo Resist 15000A Photo Resist,NBA Stepper 21mj/cm2 - Developer Developer TMAH,Bake 130℃ Developer TMAH 2.36% ADI CD/Overlay:L1:14+-1um Etch ICP Taper angle25+-10(MoW) ICP Taper angle30+-15(AlNd/MoW) He Stripper MoW:MEA,BDG:80℃.60sec+O3:200℃,60sec Al/Nd/MoW,BDG:80℃,60sec+IPA:23℃ Stripper(MEA30%),IPA OS/tester Criteria

Pre Clean Brush(Detergent LH300) ->Rinse->MS->O3->CJ->Spin Dry

Sputter MoW:2350A AlNd/MoW(3000/500A)

Coater Photo Resist 15000A NBA洗邊

Stepper 21mj/cm2

Developer Developer TMAH, Bake 130℃

Etch ICP Taper angle25+-10(MoW) ICP Taper angle30+-15(AlNd/MoW)

Stripper Stripper(Mea30%): MoW:MEA,BDG:80℃.60sec+O3:200℃,60sec Al/Nd/MoW,BDG:80℃,60sec+IPA:23℃

PEP2 Process Condition Chemicals SiON Pre Clean Detergent LH300 Brush->Rinse->MS->CJ->Spin Dry Detergent LH300 SiON PECVD SiON:1750A N2O,N2,SiH4,NH3 4Layer PreClean Photo Resist,NBA 4Layer PECVD SiON/g-SiN/a-Si/IS-SiNx (1750/500/500/3300)+10secN2O treat 1.SiON:SiH4,N2O,N2 2. g-SiN:SiH4,NH3,N2 3.a-Si: SiH4.H2 4.IS-SiNx: SiH4,NH3,N2 Coater Photo Resist 15000A Stepper 3500mj/cm2(Back side exposure) 21mj/cm2 - Developer Developer TMAH,Bake 130℃ Developer TMAH 2.36% ADI Overlay:<=0.7um Etch 0.6%DHF Stripper MEA,BDG:80℃.60sec+O3:200℃,60sec Stripper(MEA30%),IPA

SiON Pre Clean Brush(Detergent LH300) ->Rinse->MS->CJ->Spin Dry

SiON PECVD 1.SiON:1750A 2.主沉積:SiH4,N2O,N2,NH3

4Layer PECVD - SiON SiON:1750A 1.SiON:1750A 2.主沉積:SiH4,N2O,N2

4Layer PECVD - g-SiN 1.g-SiN:500A 2.主沉積: SiH4.NH3,N2 SiON:1750A

4Layer PECVD - a-Si 1.a-Si:500A 2.主沉積: SiH4,H2 SiON:1750A SiON:1750A g-SiN:500A

4Layer PECVD - IS 1.IS-SiNx: 500A 2.主沉積: SiH4,NH3,N2 SiON:1750A g-SiN:500A a-Si:500A

Coater Photo Resist 15000A NBA洗邊

Back side exposure 3500mj/cm2

Stepper 22mj/cm2

Developer Developer TMAH, Bake 130℃

Etch 0.6% DHF

Stripper Stripper(MEA30%): MEA,BDG:80℃.60sec+O3:200℃,60sec,IPA

PEP3 Process Condition Chemicals N+ Pre Clean RinseLAL50O3->MS->CJ->Spin Dry Detergent LH300,LAL50,O3 PECVD N+-SiNx:500A+-20% SiH4,PH3,H2 M2 PreClean Photo Resist,NBA Sputter Mo/Al/Mo(180/2500/500A) Mo Target,Al Target,Ar Coater Photo Resist 15000A Stepper 28mj/cm2 - Developer Developer TMAH,Bake 130℃ Developer TMAH 2.36% ADI Overlay:<=0.7um M2 Etch Taper angle 30+-15° Al-Etch: HNO3,CH3COOH,H3PO4 3Layer Etch 80% Over Etch 72~78sec SF6,He,HCl,O2 Stripper MEA,BDG:80℃.60sec+IPA23℃,28sec Stripper(MEA30%),IPA

N+ Pre Clean RinseLAL50O3->MS->CJ->Spin Dry

PECVD 1.N+-SiNx:500A+-20% 2.主沉積: SiH4,PH3,H2

M2 Pre Clean 1.N+-SiNx:500A+-20% 2.主沉積: SiH4,PH3,H2

Sputter Mo/Al/Mo(180/2500/500A) Mo Target,Al Target,Ar

Coater Photo Resist,NBA NBA洗邊

Stepper Developer TMAH, Bake 130℃

Developer Developer TMAH, Bake 130℃

M2 Etch Taper angle 30+-15° Al-Etch: HNO3,CH3COOH,H3PO4

3Layer N+,a-Si,g-SiN Dry Etch DryEtch:SF6,He,HCl,O2 80% Over Etch 72~78sec

Stripper Stripper(MEA30%): MEA,BDG:80℃,65sec+IPA 23℃,28sec

PEP4 Process Condition Chemicals Pre Clean RinseMS->CJ->Spin Dry Detergent LH300 PECVD P-SiNx:2000A+-15% SiH4,NH3,N2 Coater Photo Resist 30000+-1000A Photo Resist,NBA Stepper 37mj/cm2 - Developer Developer TMAH,Bake 130℃ Developer TMAH 2.36% ADI Overlay:<=0.7um Etch Taper angle 30+-15° Al-Etch: HNO3,CH3COOH,H3PO4 Stripper MEA,BDG:80℃.65sec+IPA23℃,28sec Stripper(MEA30%),IPA

PV Pre Clean RinseMS->CJ->Spin Dry

PV PECVD 1.P-SiNx:P-SiNx:2000A+-15% 2.主沉積: SiH4,NH3,N2

Coater Photo Resist 30000A NBA洗邊

Stepper

Developer Developer TMAH, Bake 130℃

Etch 5.7~8 BHF,32sec

Stripper

Stripper

ITO Oxalic acid

ITO

ITO

ITO