Fig. 1 The MB2T4-family materials (MB2T4: M = transition-metal or rare-earth element, B = Bi or Sb, T = Te, Se, or S) using MnBi2Te4 as an example. The.

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Fig. 1 The MB2T4-family materials (MB2T4: M = transition-metal or rare-earth element, B = Bi or Sb, T = Te, Se, or S) using MnBi2Te4 as an example. The MB2T4-family materials (MB2T4: M = transition-metal or rare-earth element, B = Bi or Sb, T = Te, Se, or S) using MnBi2Te4 as an example. (A) Monolayer MB2T4 with an FM M layer, whose easy axis is out of plane for MB2T4. The monolayer is predicted to be an FM insulator for varying element M (blue panels). It is metallic and possibly unstable for other elements (gray panels). The total magnetic moments per unit cell and their orientations (out of plane or in plane) of MBi2Te4 are depicted by the numbers and red arrows, respectively, in the bottom panel. Note that the magnetic easy axis is unknown for M = Ti. (B) Rich topological quantum states in MB2T4 thin films (2D) and bulks (3D) of different magnetic states that are tunable from AFM to FM or PM. AI, axion insulator; QSH, quantum spin Hall; DSM, Dirac semimetal. (C) Schematic diagram showing that magnetism and topology in MnBi2Te4 are induced by Mn d-bands and Bi-Te p-bands, respectively. (D) Band structure of monolayer MnBi2Te4, which is an FM insulator. Jiaheng Li et al. Sci Adv 2019;5:eaaw5685 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).