Critical misfit in thin film epitaxy - Example Problems (A) Consider the thin film growth of Ni(111) on a single crystal Cu(111) surface. Determine the critical Thickness at which the 1st misfit dislocation forms. (B) Perform the same calculation for Cu(111) on Ni(111). Data set Lattice parameters, a: Ni: 0.352 nm. Cu: 0.361 nm Youngs modulus: Ni: 200 GPa. Cu: 127 GPa. Poisson’s ratio: Ni: 0.31. Cu 0.32 Auxiliary calculations

Critical misfit in thin film epitaxy - Example Problems

Critical misfit in thin film epitaxy - Example Problems (B) Perform the same calculation for Cu(111) on Ni(111).

Critical misfit in thin film epitaxy - Example Problems C. Determine the critical thickness as a function of the misfit for the following set of parameters. Y = 1 x 1011 Pa Gf=Gs = 3 x 1010 Pa vf =vs = 0.30 b = 0.3 nm = ro M = 2.1 x 1010 0.6 nm Cu/Ni 0.35 nm Cu/Ni more exact