Presented by: Bc. Roman Hollý

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Presentation transcript:

Presented by: Bc. Roman Hollý Magnetoelectronics Presented by: Bc. Roman Hollý

Information Processing ELECTRON CHARGE SPIN Information Processing Information Storage Semiconductors Magnetic Materials Magnetoelectronics

Magnetoelectronic devices Hall Effect Magnetoresistance Giant Magnetoresistance Spin dependent transport effects Devices based on Lorentz force Devices based on electron spin

Basics of spin-dependent transport 1

Basics of spin-dependent transport 2

Basics of spin-dependent transport 3

Spin-valve Transistor

Spin-valve principle, GMR

Giant Magnetoresistance Co free layers 10 nm Cu spacers 4,8 nm Subsystem: Co/Cu – 2,7/3,2 nm

MRAM basics

Magnetoelectronics Magnetic sensors Integrated magnetoelectronics – MRAM Spin – dependent transport “spintronics”