Vertical Test System and T-mapping/X-ray-mapping at KEK-STF Y. Yamamoto, H. Hayano, E. Kako, S. Noguchi, H. Sakai, M. Satoh, T. Shishido, K. Umemori, K. Watanabe (KEK, Japan) Commissioning Test [SRF2009@Berlin; TUPPO 038] AES#001 cavity was used, which was on loan from FNAL. Pinpoint attachment at suspicious spot Successful! Summary Abstract The new vertical test facility was completed at STF and it is routinely used without any trouble. The commissioning test for the system check was successful by using the AES#001 cavity. The T-mapping and X-ray-mapping system was completed and the heating location at the quenching was perfectly detected. There was a correlation between the heating location and the X-ray emission site, when the cavity has a heavy field emission. In the near future, a new DAQ system using EPICS will be introduced, which is under developing. Suspicious spots A new vertical test facility was built in KEK-STF (Superconducting rf Test Facility) and in operation since July/2008. After the commissioning tests using AES#001 cavity which was on loan from FNAL, vertical test was routinely started for S1-Global project at KEK-STF. At the same time, a new T-mapping system was introduced for the identification of the heating location at the thermal quenching, which has 352 carbon resistors and is capable of more certainly identifying that, compared to the original T-mapping system. Recently, a new X-ray-mapping system is also completed. Suspicious spots at #3 cell Vertical Test System at STF T-mapping/X-ray mapping System & Results Content Feature Cryostat 4m height, φ520mm, 10W (static loss) Pumping system Rotary pump (4,000ℓ/min) x 2, Mechanical booster pump (15,000ℓ/min) x 2 Radiation Shielding 16cm thickness, Iron plate, Movable/Fixed type High Power RF Amplifier Max. 400W, Min. 100W, 1240~1310MHz, Stability: 3% Cavity Hanger Stand 3m height, Setting for 4 cavities Data Acquisition System LabVIEW (present), EPICS (future) Content Feature T-mapping 352 carbon resistors (Allen-Bradley, 50 and 100Ω) X-ray-mapping 142 PIN diodes (HAMAMATSU, S1223-01) Sampling time 0.1sec Data logger MX100/MW100 (YOKOGAWA) PXI2501/4071/6225 (National Instruments) DAQ system EPICS (future) MHI#5 MHI#9 1st power rise @π mode Equator of #2 cell π 7π/9 5π/9 π 8π/9 3π/9 6π/9 4π/9 Summary of T-mapping result at STF cavity # of V.T. Eacc, max [MV/m] heating cell @π mode cause of limitation for π mode heating cell @other pass-band modes radiation level @Eacc, max[μSv/h] AES#001 2nd 15.7 #3 found defect #3@5, 6, 8π/9 464 3rd 21.8 #5 & #8@3π/9 >1000 MHI#5 1st 27.3 #5 defect or contamination #5@3π/9 #1 & #9@4π/9 19.7 #8 #8@3, 4, 8π/9 #3@5π/9 #1 & #6@6π/9 #5@7π/9 143 27.1 #5@3, 5, 7π/9 #6@4, 6π/9 303 MHI#6 25.7 #7 field emission 4th 19.6 #9 multipacting (?) #9@4~8π/9 5th 22.1 ? cable breakdown #1@6π/9 56000 MHI#7 16.5 #1 #1@5~8π/9 #4@4π/9 #2@3π/9 3220 MHI#8 16.0 #2 #2@3, 4, 8π/9 #3@5, 6π/9 #1@7π/9 268 MHI#9 25.0 (#2) #2@3, 4π/9 #5@5π/9 #9@7, 8π/9 >99000 T-mapping X-ray-mapping 2nd power rise @π mode Equator of #9 cell