Introduction Thin films of hydrogenated amorphous silicon (a-Si:H) are used widely in electronic, opto-electronic and photovoltaic devices such as thin film transistors for flat panel displays, detectors for medical imaging and solar cells. Nowadays, there is a trend to use hydrogenated microcrystalline Si (µc-Si:H) for these applications, because of its improved mobility and electrical stability. Crystallization of hydrogenated amorphous silicon films has recently become an attractive subject. So, metal induced crystallization (MIC) emerged as an alternative crystallization technique. The reaction occurs at the interlayer by diffusion and the driving force for crystallization of a-Si is the difference on the free energy between amorphous and crystalline phases. Here, we used lost cost metal Al in MIC process, change the annealing temperature and time to study the crystallization process. The hydrogen dilution ratio which used in prepare a-Si:H thin films was various.

Introduction a-Si:H μc-Si:H a-Si:H had been widely used in Electronic device TFT for flat panel display Opto-electronic device detectors for medical imaging Photovoltaic devices solar cells There is a trend to µc-Si:H for these applications, because of its improved mobility and electrical stability Aluminum-induced crystallization (AIC) a-Si:H μc-Si:H In order to study the crystallization process, a-Si:H having various structures were prepared and annealed under various conditions of annealing temperatures and time.

Experimental Preparation method rf magnetron sputtering (a-Si:H) Evaporation (Al) Annealing method RTA in vacuum Characterization method crystallization Raman (Ar laser λ=488nm) thickness Ellipsometry Various hydrogen dilution ratio a-Si:H μc-Si:H Al Al annealing substrate (SiO2) substrate (SiO2)