Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Layout showing the sample used for temperature measurements in this study. The sample consists of a polysilicon microheater beam on a thick PECVD silicon dioxide on bulk silicon. Constraint in the movement of the microheater from the oxide layer is used to induce stress variations in the device.

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Calibration of Stokes peak location for phosphorous doped polysilicon

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Effect of stress on the linewidth of doped polysilicon (top). The scatter of the linewidth with stress is far less than the measurement uncertainty. The effect of stress on the Stokes peak location results in a linear shift with applied stress (bottom).

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Linewidth calibration of phosphorous doped polysilicon which displays a quadratic behavior over the temperature range shown.

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Estimated measurement uncertainty as a function of temperature from all sources. The uncertainty is based on a vector summation of the individual contribution to uncertainty and then taking 20 samples to reduce the single measurement uncertainty according to Eq. .

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Temperature at the center of a microheater as a function of power dissipated. When comparing the Stokes and linewidth techniques, a thermally induced compressive stress was realized.

Date of download: 10/13/2017 Copyright © ASME. All rights reserved. From: Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress J. Heat Transfer. 2006;129(3):329-334. doi:10.1115/1.2409996 Figure Legend: Temperature distribution of a fixed–fixed microheater using half-symmetry. A comparison of the Stokes and linewidth calibration is seen, revealing good agreement near the bond pad (distance=0◻m) and a significant difference at the beam center (distance=100◻m). The measured temperature difference (33°C) is greater than the ±15°C uncertainty between the two measurements at 400°C. This difference suggests the presence of a compressive stress in the device.