Low Concentration Ammonia Detection Using Organic Field Effect Transistor Presented By Chandan Kumar Department of Electronics Engineering Prof. Satyabrata.

Slides:



Advertisements
Similar presentations
Field Effect Transistors
Advertisements

SERS Biosensor for Endocrine Disruption Biomarker: Vitellogenin
Field Effect Transistor characteristics
Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.
(Neil weste p: ).  A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain.
Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,
Crystallization of Perylene Diimides for Organic Field Effect Transistors Bristee Das October 3, 2014.
Crystallization of Small Molecules for Organic Electronic Applications Jessica Lynn Saylors, Anna Hiszpanski, and Yueh-Lin (Lynn) Loo 07 October 2011 Summer.
Chemical Nanoparticle Deposition of Oxide Nanostructured Thin Films 6. Conclusions 2. Experimental Setup 1. Abstract We have developed a novel approach.
Charge-Based Biosensor Using Carbon Nanotube Transistors Array Presenter: Jui-Ping Chiang.
ENEE-698E 2 nd presentation by: Saeed Esmaili Sardari November 06, 2007.
10/8/2004EE 42 fall 2004 lecture 171 Lecture #17 MOS transistors MIDTERM coming up a week from Monday (October 18 th ) Next Week: Review, examples, circuits.
Properties of Suspended ZnO Nanowire Field-Effect Transistor
Applications: CO Gas Sensor
Paul Sellin Detector Research at the University of Surrey Dr Paul Sellin Centre for Nuclear and Radiation Physics Department of Physics University of Surrey,
Mobility Chapter 8 Kimmo Ojanperä S , Postgraduate Course in Electron Physics I.
Brett Goldsmith, Ye Lu, Nicholas Kybert, A.T. Charlie Johnson University of Pennsylvania Department of Physics and Astronomy.
Microcantilevers III Cantilever based sensors: 1 The cantilever based sensors can be classified into three groups (i)General detection of any short range.
Photophysical Properties of CdSe/ZnS Quantum Dots Embedded in Polymer Films and Solubilized in Toluene Final Presentation Jamie Golden CHEM /30/10.
Total Dose Effects on Devices and Circuits - Principles and Limits of Ground Evaluation-
.Abstract Field effect gas sensors based on zinc oxide were fabricated. In order to increase gas sensor’s sensitivity to carbon monoxide, Au nanoparticles.
EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V
Implantation of N-O in Diamond
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.
NAN ZHENG COURSE: SOLID STATE II INSTRUCTOR: ELBIO DAGOTTO SEMESTER: SPRING 2008 DEPARTMENT OF PHYSICS AND ASTRONOMY THE UNIVERSITY OF TENNESSEE KNOXVILLE.
Charge transport in organic semiconductors and organic field effect transistors Andrej Golubkov IF – Seminar, Graz,
Microwave Assisted ZnO Nanorod Growth for Biosensing This material is based upon work supported by the National Science Foundation.
VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wānanga o te Ūpoko o te Ika a Māui Siegmar Roth Super-Jubilee 26 June 2015 Alan B. Kaiser MacDiarmid Institute.
PROJECT GUIDE GROUP MEMBERS Dr.B.GOPI,B.E.M.E.Ph.D P.MENAKA G.NIVEDHA M.PAVITHRA M.POORNIMA G.PRIYA 1.
The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between and 3x10 20 cm -3 by.
Influence of carrier mobility and interface trap states on the transfer characteristics of organic thin film transistors. INFM A. Bolognesi, A. Di Carlo.
Ultrafast carrier dynamics Optical Pump - THz Probe Ultrafast carrier dynamics in Br + -bombarded semiconductors investigated by Optical Pump - THz Probe.
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu.
1 Advisor : Cheng-Hsin Chuang Advisee :Wan-Ting Su Department of Mechanical Engineering & Institute of Nanotechnology, Southern Taiwan University, Tainan,
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.
Flexible Hybrid Electronic Systems Ananth Dodabalapur The University of Texas at Austin.
Slide # Goutam Koley Electronic characterization of dislocations MorphologyPotential 0.1 V /Div 10 nm /Div Surf. Potential G. Koley and M. G. Spencer,
Development of Affordable Bioelectronic Interfaces Using Medically Relevant Soluble Enzymes Brian L. Hassler 1, Maris Laivenieks 2, Claire Vieille 2, J.
Electric-field Effect on Transition Properties in a Strongly Correlated Electron (La,Pr,Ca)MnO 3 Film Electric Double Layer Transistor Source Drain Gate.
© April 26, 2010 Dr. Lynn Fuller Chemical Sensor Lab Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE OF TECHNOLOGY.
Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1μm MOSFET’s with Epitaxial and δ-Doped Channels A. Asenov and S. Saini, IEEE.
Electronic transport through Single Organic Crystals
MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.
Doping-type Dependence of Damage in Si Diodes Exposed to X-ray, Proton, and He + Irradiation MURI Meeting - June 2007 M. Caussanel 1, A. Canals 2, S. K.
Fowler-Nordheim Tunneling in TiO2 for room temperature operation of the Vertical Metal Insulator Semiconductor Tunneling Transistor (VMISTT) Lit Ho Chong,Kanad.
VO 2 NANOSTRUCTURES BASED CHEMORESISTOR FOR LOW POWER ENERGY CONSUMPTION HYDROGEN SENSING Energy Postgraduate Conference 2013 Ms. Aline SIMO Supervisor:
Flexible Hybrid Electronic Systems Ananth Dodabalapur The University of Texas at Austin.
CHAPTER 5 FIELD EFFECT TRANSISTORS(part a) (FETs).
A WIRELESS PASSIVE SENSOR FOR TEMPERATURE COMPENSATED REMOTE PH MONITORING IEEE SENSORS JOURNAL VOLUME 13, NO.6, JUNE 2013 WEN-TSAI SUNG, YAO-CHI HSU Ching-Hong.
Paper Survey Advisor : Prof C-H Chuang Advisee : Jian-Liang Mu (穆建良) Institute of Mechanical-Engineering-Department Date : A Polymer-Based Flexible.
UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED Response Time of.
Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.
D ETECTION OF LUNG CANCER IN PRIMITIVE STAGE BY ANALYSIS OF VOLATILE ORGANIC COMPOUNDS IN EXHALED AIR COMPOUNDS By, Ayush Faisal Ameen Siddharth DC Santosh.
Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis 指導教授:林克默 博士 報告學生:郭俊廷 報告日期: 99/11/29 Journal of Crystal.
4. Operational Amplifiers
Week 9 Emerging Technologies
Chapter 3 Fabrication, Layout, and Simulation.
M. Mahdouani a, W. Boukhili a, C. Tozlu b, R. Bourguigaa
4. Experimental Results of Hydrogen Sensing Experiments
Thales Research and Technology
Power Dissipation in Nanoelectronics
Materials and Devices for Neural Systems and Interfaces
Nanowire Gate-All-Around (GAA) FETs
Flexible Hybrid Electronic Systems
Received: May 25, 2012 Revised: August 8, 2012
Ionic liquid gating of VO2 with a hBN interfacial barrier
Fig. 5 Analytical performance of the wearable cortisol sensor.
Fig. 3 HfSe2 transistors. HfSe2 transistors. (A) Schematic of HfSe2 device, back-gated through 90-nm SiO2, and with ALD alumina used as both protective.
Fig. 4 Short-channel 2L-OFET for cutoff frequency measurement.
Presentation transcript:

Low Concentration Ammonia Detection Using Organic Field Effect Transistor Presented By Chandan Kumar Department of Electronics Engineering Prof. Satyabrata Jit & Prof. Rajiv Prakash Department of Electronics Engineering & School of Materials Science and Technology IIT (BHU) Varanasi India – IC-IMPACTS 2016 Summer Institute in Nanotechnology IC - IMPACTS Building Healthy Communities in Canada & India

Sensor or Detector Electronic processing Artificial Intelligence e- Sensing Natural sensing process  Development of room temperature, low cost and flexible sensor. Presence of ammonia is observed Objective & Motivations Experimental Process Results & Discussions Concluding Remarks  Highly sensitive and low concentration detection of ammonia.  Irritate eyes, Nose and throat & burning skin [1].  Maximum 8 hrs of 25 ppm NH 3 can cause chronic effects & max. 15 min of 35 ppm start irritate [2]. Impact of Ammonia  Sources of NH 3 are natural: decaying organics & excreta of organisms. Sources: 1.S. N. Behera et. al, Environ Sci Pollut Res, 20:8092–8131, Donham et al, J. Occup. Environ. Med. 42: , Outline

Film Deposition [1] PET ITO PVA : TiO 2 PQT-12 Au Sensible Area NH 3 Sensor Test Set-up Experimental Process  Lone electron pairs is captured by PQT-12 [2] OFET Structure Sources: 1.B. S. Ong et al, Journal of the American Chemical Society , , Rajiv K. Pandey et al, J. Phys. Chem. C, 118, 22943−22951, NH PQT-12 Molecules Carrier Holes Trapped Carriers

Output Curve : I D vs V DS Transfer Curve : I D vs V GS OFET Parameter Without NH 3 With NH 3 Mobility0.08 cm 2 /Vs 0.03 cm 2 /V s Threshold Voltage V- 8.3 V Drain Current Change by NH 3  Interaction of ammonia with polymer [1, 2] Increase Channel resistance Decrease in drain current Results and Discussions Source: 1.A. Salleo et al, Physical Review B 70, , Shashi Tiwari et al, Sensors and Actuators B 171– 172 (2012) 962– 968.  Two type of Interaction observed Chemical base dedoping, Physical dipole-charge interactions

Concluding Remarks Simple Solution based Technique Large Area Fabrication Low Temperature Processing Low Cost Technique Better than Metal Oxide Sensor Room Temp. Sensing ~ 50 % change in ID at -20 V for 25 ppm of NH3 Excellent Sensitivity Possibilities  Edge of flexibility  Sticker type device Suitable to wear Possible to use as curved sensors Thanks to Prof. S. Jit, Prof. R. Prakash, Gopal Rawat, Hemant Kumar & Yogesh Kumar for their continuous support & help. Thank You Everyone for Kind Attentions and Valuable Feedback