C. Weiss 1, 2, G. Badurek 2, E. Berthoumieux 3, M. Calviani 1, E. Chiaveri 1, D. Dobos 1, E. Griesmayer 4,C. Guerrero 1,E. Jericha 2, F. Kaeppeler 5, H.

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Presentation transcript:

C. Weiss 1, 2, G. Badurek 2, E. Berthoumieux 3, M. Calviani 1, E. Chiaveri 1, D. Dobos 1, E. Griesmayer 4,C. Guerrero 1,E. Jericha 2, F. Kaeppeler 5, H. Leeb 2,T. Rauscher 6, V.Vlachoudis 1 and the n_TOF collaboration 1 CERN, Geneva, Switzerland 2 Vienna University of Technology, Austria 3 CEA Saclay, IRFU, F Gif-sur-Yvette, France 4 CIVIDEC Instrumentation GmbH, Vienna, Austria 5 Karlsruhe Institute of Technology, Campus Nord, Germany 6 University of Basel, Basel, Switzerland A CVD diamond detector for (n,α) cross section measurements

Introduction 1. CVD diamond as detector material 2. The n_TOF experiment at CERN B(n, α ) 7 Li measurement n_TOF, with the prototype detector 4. Outlook on future measurements

CVD diamond as detector material

Chemical vapor deposition (CVD) diamond is a 1. Semiconducting material Band gap = 5.5 [eV] Energy to create an e - -hole pair = 13 [eV] typical IV curve (pCVD): low leakage current sCVD ~ 2E Particle Interaction with the diamond: => Neutrons: nuclear reactions with 12 C  Solid state ionization chamber Charged particlesUncharged particles (photons) ExcitationPhotoelectric effect IonizationCompton scattering BremsstrahlungPair production

CVD diamond as detector material 3. Different materials: Poly crystalline (pCVD)  Different charge collection distance Single crystalline (sCVD)  Pulse shapes grow direction grown on non-diamond Substrate < 12 cm ∅ < 2 mm thickness grown on HTHP diamond Substrate ~ 1 cm² < 1 mm thickness High radiation tolerance Rapid response (~ ns) Low dark current

CVD diamond as detector material Examples: 1. Properties are in general not Temperature dependend 2. Small dark current: Noise comes from the electronics, not the material 3. Energy resolution sCVD :  E.Griesmayer et al., CERN BE-Note : 0.6 % ( 22.8 MeV 12 C Ions)  M.Pillon et al., NIM A 640 (2011) 185: 0.3 % (5 – 20.5 MeV Neutrons) 4. Double pulse discrimination (DPD) vor MIP: Current Amplifier: CIVIDEC Instrumentation GmbH  t rise = 180 [ps]  FWHM (electronic DPD ) = 300 [ps] 500 μ m pCVD with 1V / μ m  DPD = 2 [ns] 500 μ m sCVD with 0.8 V / μ m  DPD = 6 – 9 [ns]

The n_TOF Experiment

The n_TOF experiment

 High instantenous flux  Wide energy range Neutron Fluence

10 B(n, α ) 7 Li Measurement 2011 with the prototype detector

The CVD Diamond Detector 20 mm Metallization: In coll.with CEA Saclay 4 pads of 100 nm Al d = 500 μ m

The Detector Prototype 10 B 4 C samplePCB structure with diamond Neutron Beam Distance Sample to Diamond d = 0.5 mm

10 B (n, α ) 7 Li n_TOF 16.June 2011 – 29.June 2011 OBJECTIVES OF THE TEST MEASUREMENT : 1) Investigate the background level in the region of interest 2) Identify aspects to be improved for the future detector 3) Investigate the detection efficiency for the (n, α ) reaction Reaction Yield:

10 B (n, α ) 7 Li measurement Neutrons Detector box with Sample inside Preamplifiers * * CIVIDEC Instrumentation GmbH:

Preliminary Results – TOF Pad 2

Preliminary Results – Reaction Yield

Outlook Intended Measurements

Proposed Isotopes  keV < E n < MeV Candidates: S Ni Zn Mo Sm  E n > MeV Candidates: O Mg

Prototype: Expected Counting rates

Intended Measurements 2011: Background measurement at PTB Braunschweig 2012: 33 S (n, α ) 30 Si  30 x 30 [mm 2 ] pCVD diamond detector  For background reduction: thickness only 250 μ m  33 S sample at both sides of detector  Assembly under Vacuum Future (2014?):  Ringdetector with sCVD diamonds  Elimination of 12 C induced background  Reduction of in-beam γ -ray background at n_TOF

Thank you for your attention!

Backup

Diamond Properties PropertyDiamondSilicon Band gap [eV] Low leakage Breakdown field [V/cm]10 7 3x10 5 Intrinsic R.T. [Ω cm]> x10 5 Intrinsic carrier density [cm -3 ]< x10 10 Electron mobility [cm 2 /Vs] Fast signal Hole mobility [cm 2 /Vs] Saturation velocity [cm/s]1x x 10 7 Density [g/cm 3 ] Atomic number – Z614 Dielectric constant - ε Low capacitance Displacement energy [eV/atom] Radiation hard Thermal conductivity [W/m.K]~ Heat spreader Energy to create e-h pair [eV] Radiation length [cm] Spec. ionization loss [MeV/cm] Aver. signal created / 100 μm [e 0 ]  Low signal Aver. signal created / 0.1 X 0 [e 0 ]

CVD diamond as detector material sCVD typical pulse shapes: Testbeam n_TOF Triangular ≈ pCVD signal Rectangular

CVD diamond as detector material Successfully used in various applications, for example:  CERN: RD42 => ATLAS, CMS, ALICE, LHCb  CERN: LHC – beam loss monitor => cryogenic applications under investigation at the moment  Geel: Fission fragment monitor  CEA: Neutron applications  Beam position monitors at synchrotrons  Industrial applications: Cyclotron - Phase monitor  …

Preliminary Results – Pad 2 n_TOF γ –Background - Moderation

Suggested n_TOF

2012: 33 S

Abstract In astrophysics, the determination of the optical α -nucleus potential for low α energies has turned out to be a challenge, crucial in understanding the origin of the stable isotopes. Theory still cannot predict the optical potentials required for the calculation of the astrophysical reaction rates in the Hauser-Feshbach statistical model and there is scant experimental information on reactions with α particles at the relevant astrophysical energies. Measurements of (n, α ) cross sections offer a good opportunity to study the α channel. At the n_TOF experiment at CERN a prototype detector, based on the chemical vapor deposition (CVD) diamond technology has been developped for (n, α ) measurements. A reference measurement of the 10B(n, α )7Li reaction has been performed in 2011 at n_TOF as a feasibility study for this detector type. The preliminary results of this measurement and an outline for future experiments will be presented.