Characterization of 3D and planar Si diodes with different neutron converter materials R. Mendicino, M. Dalla Palma, M. Boscardin, S. Ronchin, G.-F. Dalla.

Slides:



Advertisements
Similar presentations
of Single-Type-Column 3D silicon detectors
Advertisements

Università degli Studi di Perugia Università degli Studi di Perugia IMM Bologna 1 Measurements and Simulations of Charge Collection Efficiency of p+/n.
Saeedeh Ghaffari Nanofabrication Fall 2011 April 15 1.
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
GaAs radiation imaging detectors with an active layer thickness up to 1 mm. D.L.Budnitsky, O.B.Koretskaya, V.A. Novikov, L.S.Okaevich A.I.Potapov, O.P.Tolbanov,
Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
Optical Characterization of GaN-based Nanowires : From Nanometric Scale to Light Emitting Devices A-L. Bavencove*, E. Pougeoise, J. Garcia, P. Gilet, F.
Charge collection studies on heavily diodes from RD50 multiplication run (update) G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
RAD2012 Ultra-Thin 3D detectors Celeste FletaInstituto de Microelectrónica de Barcelona Celeste Fleta Instituto de Microelectrónica de Barcelona Centro.
11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.
KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik
Future usage of quasi-infinite depleted uranium target (BURAN) for benchmark studies Pavel Tichý Future usage of quasi-infinite depleted uranium target.
Edge-TCT and Alibava measurements with pion and neutron irradiated micro-strip detectors V. Cindro 1, G. Kramberger 1, I. Mandić 1, M. Mikuž 1,2, M. Milovanović.
GERMANIUM GAMMA -RAY DETECTORS BY BAYAN YOUSEF JARADAT Phys.641 Nuclear Physics 1 First Semester 2010/2011 PROF. NIDAL ERSHAIDAT.
SILICON DETECTORS PART I Characteristics on semiconductors.
Fully depleted MAPS: Pegasus and MIMOSA 33 Maciej Kachel, Wojciech Duliński PICSEL group, IPHC Strasbourg 1 For low energy X-ray applications.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
Performance limits of a 55  m pixel CdTe detector G.Pellegrini, M. Lozano, R. Martinez, M. Ullan Centro Nacional de Microelectronica, Barcelona, 08193,
Advanced semiconductor detectors of neutrons
Trento, Feb.28, 2005 Workshop on p-type detectors 1 Comprehensive Radiation Damage Modeling of Silicon Detectors Petasecca M. 1,3, Moscatelli F. 1,2,3,
Energy calibration of the threshold of Medipix for ATLAS Céline Lebel Université de Montréal presenting for the Institut of Experimental.
VCI2010 Photonic Crystals: A Novel Approach to Enhance the Light Output of Scintillation Based Detectors 11/19/2015 Arno KNAPITSCH a, Etiennette AUFFRAY.
16 sept G.-F. Dalla BettaSCIPP Maurizio Boscardin a, Claudio Piemonte a, Alberto Pozza a, Sabina Ronchin a, Nicola Zorzi a, Gian-Franco Dalla Betta.
8 July 1999A. Peisert, N. Zamiatin1 Silicon Detectors Status Anna Peisert, Cern Nikolai Zamiatin, JINR Plan Design R&D results Specifications Status of.
Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors Graeme Stewart a, R. Bates a, C. Corral b, M. Fantoba b, G. Kramberger c, G.
Systematic studies of neutrons produced in the Pb/U assembly irradiated by relativistic protons and deuterons. Vladimír Wagner Nuclear physics institute.
Cross-sections of Neutron Threshold Reactions Studied by Activation Method Nuclear Physics Institute, Academy of Sciences of Czech Republic Department.
Effects of long term annealing in p-type strip detectors irradiated with neutrons to Φ eq =1·10 16 cm -2, investigated by Edge-TCT V. Cindro 1, G. Kramberger.
CERN, November 2005 Claudio Piemonte RD50 workshop Claudio Piemonte a, Maurizio Boscardin a, Alberto Pozza a, Sabina Ronchin a, Nicola Zorzi a, Gian-Franco.
P.Finocchiaro 1 Third European Energy Conference E2C 2013 Budapest October He-free low-cost neutron detectors HELNED: Helium-3-free low-cost.
Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek
Institute of Experimental and Applied Physics Czech Technical University in Prague IEAP – CTU Prague 1 Current status and future development of neutron.
Experimental Studies of Spatial Distributions of Neutrons Produced by Set-ups with Thick Lead Target Irradiated by Relativistic Protons Vladimír Wagner.
Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner,
Geant4 User Workshop, Catania, Italy, 15th October, 2009
HIGH QUANTUM EFFICIENCY NEUTRON DETECTOR WITH A SPATIAL RESOLUTION IN THE MICROMETER RANGE GÖRAN THUNGSTRÖM.
INFN and University of Perugia Characterization of radiation damage effects in silicon detectors at High Fluence HL-LHC D. Passeri (1,2), F. Moscatelli.
TCT measurements with SCP slim edge strip detectors Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko Milovanović 1, Marko.
Ljubljiana, 29/02/2012 G.-F. Dalla Betta Surface effects in double-sided silicon 3D sensors fabricated at FBK at FBK Gian-Franco Dalla Betta a, M. Povoli.
Celso Figueiredo26/10/2015 Characterization and optimization of silicon sensors for intense radiation fields Traineeship project within the PH-DT-DD section.
Spectra distortion by the interstrip gap in spectrometric silicon strip detectors Vladimir Eremin and.
ICT 1 SINTEF Edge-On Sensor with Active Edge Fabricated by 3D-Technology T. E. Hansen 1), N. Ahmed 1), A. Ferber 2) 1) SINTEF MiNaLab 2) SINTEF Optical.
Claudio Piemonte Firenze, oct RESMDD 04 Simulation, design, and manufacturing tests of single-type column 3D silicon detectors Claudio Piemonte.
Sabina Ronchin 1, Maurizio Boscardin 1, Nicola Zorzi 1, Gabriele Giacomini 1, Gian-Franco Dalla-Betta 2, Marco Povoli 3, Alberto Quaranta 2 ; Giorgio Ciaghi.
Double Electric field Peak Simulation of Irradiated Detectors Using Silvaco Ashutosh Bhardwaj, Kirti Ranjan, Ranjeet Singh*, Ram K. Shivpuri Center for.
Investigation of electric field and evidence of charge multiplication by Edge-TCT G.Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik.
Deep Level Transient Spectroscopy study of 3D silicon Mahfuza Ahmed.
Manoj B. Jadhav Supervisor Prof. Raghava Varma I.I.T. Bombay PANDA Collaboration Meeting, PARIS – September 11, 2012.
MOHAMAD KHALIL APC LABORATORY PARIS 17/06/2013 DSSD and SSD Simulation with Silvaco.
Study of PC-HPGe detector for dark matter search CDEX collaboration Application of Germanium Detector in Fundamental Research Apr. 7-13,2013.
HYDE HYbrid DEtectors for neutrons LNL Trento -TIFPA Cosenza – Gruppo Collegato Frascati FBK CSN5 – Roma – 9 aprile 2015.
DEVELOPMENT OF PIXELLATED SEMICONDUCTOR DETECTORS FOR NEUTRON DETECTION Prof. Christer Fröjdh Mid Sweden University.
Guojian Wang University of South Dakota
Fast neutron flux measurement in CJPL
G. Prasanna, P. Manoj Kumar, K. Prabhakar, M. Raghuram, S
Characterization and modelling of signal dynamics in 3D-DDTC detectors
First production of Ultra-Fast Silicon Detectors at FBK
Graeme Stewarta, R. Batesa, G. Pellegrinib, G. Krambergerc, M
Position Sensitive TCT Measurements with 3D-stc detectors
C. Leroy Montreal – Prague Collaboration
Cross-section Measurements of (n,xn) Threshold Reactions
of APS (Full Depleted FDAPS, MAPS and Hybrid Technology HPD)
for collaboration “Energy plus transmutation”
TCAD Simulations of Silicon Detectors operating at High Fluences D
Vladimir Cindro, RD50 Workshop, Prague, June 26-28, 2006
CCE measurements with Epi-Si detectors
Enhanced Lateral Drift (ELAD) sensors
3D sensors: status and plans for the ACTIVE project
Fig. 2 Materials and designs for bioresorbable PC microcavity-based pressure and temperature sensors. Materials and designs for bioresorbable PC microcavity-based.
Fabrication of 3D detectors with columnar electrodes of the same doping type Sabina Ronchina, Maurizio Boscardina, Claudio Piemontea, Alberto Pozzaa, Nicola.
Presentation transcript:

Characterization of 3D and planar Si diodes with different neutron converter materials R. Mendicino, M. Dalla Palma, M. Boscardin, S. Ronchin, G.-F. Dalla Betta, A. Quaranta, S. Carturan, G.Maggioni RESMDD14 Conference Firenze, Italy 8 th June-10 th October 2014

Outline  Introduction: state of the art in neutron detector  Neutron detectors:  3D structures and their characterizations  Planar sensors and their characterizations  New geometries under development for the next fabrication batch.  Conclusions Mendicino et al.

 Interest fields:  security, e.g. for detection of radioactive materials or explosives  medical imaging  high energy and nuclear physics  Etc.  3 H technology:  Low spatial resolution  High cost  High efficiency  High voltage required  3 H in the world has dramatically decreased with a consequent increase of cost 3 Mendicino et al. Introduction

 Thermal energy per particle is about eV.  Considering 10 B converter:  90% capture in 43µm  Path length reaction product 2-5 µm  Absolute planar efficiency 3-4% 4 MaterialReaction productsσ[b] 10 Bα Li3H+α Gdγ (low energy) Cdγ (558.6 & 651.3keV)20000 State of the art: Thermal Neutrons Mendicino et al.

5  Silicon Bulk 325um  (a) hole 20 µm depth (~4%)  (b,c) linear and sinusoidal trench 113/245 depth (up ~20%) Kansas State University research  New development under progress use double side technology Mendicino et al.

6  It is composed of pillar etched from a planar sensor  Pillar height 50µm predicted an efficiency of ~50%  Simulation shows that with silicon pillar height 100 µm is it possible have efficiency ~90% Lawrence Livermore National Laboratory solution Mendicino et al.

7  Honeycomb array  Geometry:  hole diameter: 2.8µm  Si wall width: 1µs  Aspect ratio of 40:1  Efficiency ~26% Rensselaer polytechnic Institute device Mendicino et al.

8 3D sensor schematic cross- section (not to scale), with values of the main geometrical parameters with all the contacts are on the front side. Planar sensor with guard ring and sputtered converter on the top Hyde project

9  Room Temperature  low leakage currents (a few nA/cm2)  Measured performed with HP 4145  Total depletion voltage:  ~ 10V for 3D devices  ~ 30V for planar devices Electrical characterization Mendicino et al.

10 Mendicino et al. Functional characterization  Collected charge spectra obtained from 241 Am α particles impinging the 3D sensor from the back side at two bias voltages and two different peaking times  Spectra scan (wavelength 850 nm) from the sensor back side performed at 4 µs peaking time and at two different voltages  d8 Geometry

Electrical and functional characterization 11 Mendicino et al. Alpha and Beta source scan Tuning on beta setup not optimized

CONVERTER MATERIAL DEPOSITION 12 Mendicino et al. Optical microscopy images of spattered converter on planar sensors :: A SEM photograph of planar sensors with enriched Boron sputtered on the surface A SEM photograph of a cavity filled at the University of Prague with 6 LiF converter

13  Spectra obtained with different samples with a collimated flux of thermal neutrons of about 1.5x10^7 n/(cm 2 s)  V bias =10 V excepted for PDMS 10 B that was 3 V Mendicino et al. Hyde: Neutron measurements

Thermal neutron measurements (3D detector) 14 Mendicino et al. Spectra obtained with different samples with a collimated flux of thermal neutrons of about 1x10 6 n/(cm 2 s) for 20 min on 3D sensors V bias = 10V and shaping time of 4 µs Lithium fluoride filled sensor with higher efficiency

Thermal neutron measurements (Planar detector) 15 Spectra obtained with different samples with a collimated flux of thermal neutrons of about 1x10 6 n/(cm 2 s) for 1h on planar sensors V bias = 200V and shaping time of 500ns Enriched boron coating with higher efficiency

Geant4 simulation for 6.3*10 5 thermal Neutron QGSP_BERT_HP physics model and Geant B wit purity 99% with a depth of 1000nm (3.86 % absolutely efficiency) Thermal neutron simulation (Planar detector)

Thermal neutron simulation (new detector) Geant4 simulation for 14*10 3 thermal Neutron QGSP_BERT_HP physics model and Geant B wit purity 99% (29.251% absolutely efficiency)

18 Silicon detectors for neutrons have been proposed and tested Preliminary results with thermal neutrons with sensors (both 3d and planar) coupled to 10B, B 4 C and LiF have been reported In spite of largely non-optimized geometries, encouraging results were obtained Geant4 simulation shows an agreement on the relative efficiency of the detectors and allowed a new design concept to be validated A new batch of sensors will be fabricated at FBK in the next fe months Conclusions

 This work was supported in part by the Italian National Institute for Nuclear Physics (INFN) through the CSN5 project HYDE.  Part of the research has been conducted at the CANAM (Center of Accelerators and Nuclear Analytical Methods LM ) infrastructure with a funding from the Ministry of Education, Youth and Sports of the Czech Republic. The authors are grateful to Milan Stefánik for the realization of the measurements with the cyclotron facility and Jirí Vacík, Carlos Granja and Tomas Slaviˇcek for the helpful discussion.  The authors are grateful to Vladimir Cindro and the staff of the TRIGA reactor facility at JSI Ljubljana, Slovenia, for their support in the measurements with neutrons. Acknowledgments

Thank you for the attention!! 20