Carrier Motion - Electric Fields ECE 2204. Movement of Electrons and Holes Nearly free electrons can easily move in a semiconductor since they are not.

Slides:



Advertisements
Similar presentations
P-N JUNCTION.
Advertisements

CHAPTER 4 CONDUCTION IN SEMICONDUCTORS
Fig_18_04 fig_18_04.
Lecture #5 OUTLINE Intrinsic Fermi level Determination of E F Degenerately doped semiconductor Carrier properties Carrier drift Read: Sections 2.5, 3.1.
Current Density and Drift Velocity Perfect conductors carry charge instantaneously from here to there Perfect insulators carry no charge from here to.
Current Density and Drift Velocity Current And Resistance Perfect conductors carry charge instantaneously from here to there Perfect insulators carry.
Semiconductor Device Physics Lecture 3 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
Semiconductor Device Physics
Metal-semiconductor (MS) junctions
ECE 4339: Physical Principles of Solid State Devices
Electronics.
CHAPTER 3 Introduction to the Quantum Theory of Solids
1 Chapter 27 Current and Resistance. 2 Electric Current Electric current is the rate of flow of charge through some region of space The SI unit of current.
Semiconductor Physics (Physique des semi-conducteurs)
Halliday/Resnick/Walker Fundamentals of Physics 8th edition
Electric Current and Direct-Current Circuits
Lecture 3. Intrinsic Semiconductor When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also:n 0 p 0 = n.
Electrons and Holes ECE Intrinsic Carrier Concentration Intrinsic carriers are the free electrons and holes that are generated when one or more.
SEMICONDUCTORS.
SEMICONDUCTORS Semiconductors Semiconductor devices
Current, Resistance, and Simple Circuits.  A capacitor is a device used to store electrical energy.  There are two different ways to arrange circuit.
Lecture 25: Semiconductors
Electric Current, Ohm’s Law, and Electric Circuits ISAT 241 Fall 2002 David J. Lawrence.
Chapter 24 Electric Current. The electric current I is the rate of flow of charge through some region of space The SI unit of current is Ampere (A): 1.
Current and Direct Current Circuits
Electrical Conduction in Solids
Microelectronics Circuit Analysis and Design
Electronics the Third and Fourth Lectures Third week / 11/ 1436 هـ أ / سمر السلمي.
Electric Current. Current Rate at which charge flows through a surface. Ex. If the charge on a capacitor changes by the function Q(t)=6(1-e  0.1t ),
ECE 250 – Electronic Devices 1 ECE 250 Electronic Device Modeling.
Ch 19 Current and Potential Difference. Current is rate of charge movement: I = Δq/Δt. The unit of current is the ampere, or amp. 1A = 1C/s.
Electronics 1 Lecture 2 Ahsan Khawaja Lecturer Room 102 Department of Electrical Engineering.
Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. ECE 255: Electronic Analysis and Design Prof. Peide (Peter)
Taklimat UniMAP Universiti Malaysia Perlis WAFER FABRICATION Hasnizah Aris, 2008 Lecture 2 Semiconductor Basic.
ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapter 2: Carrier Modeling Goal: To understand what.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 9 Temperature Dependence of Carrier Concentrations L7 and L8: how to get electron.
Current � and � Resistance Electric Current Resistance and Ohm’s Law A Model for Electrical Conduction Resistance and Temperature Superconductor Electrical.
Lecture #2 OUTLINE Electrons and holes Energy-band model Read: Chapter 2 (Section 2.2)
Numericals on semiconductors
BASIC ELECTRONICS Module 1 Introduction to Semiconductors
Chapter 27 Current and Resistance. Electric Current The electric current I is the rate of flow of charge through some region of space The SI unit of current.
Extrinsic Semiconductors ECE Definitions Intrinsic ▫Pure ▫There are an equal number of electrons and holes Extrinsic ▫Contains impurities (donors,
Overview of Silicon Semiconductor Device Physics
Electronics 1 Lecture 3 Moving Charge Carriers
Chapter 26 Lecture 22: Current: II
Chapter 27 Current and Resistance. Electrical Conduction – A Model Treat a conductor as a regular array of atoms plus a collection of free electrons.
Introduction to Semiconductor Technology. Outline 3 Energy Bands and Charge Carriers in Semiconductors.
ELECTRONICS II VLSI DESIGN Fall 2013
Chapter 5: Conductors and Dielectrics. Current and Current Density Current is a flux quantity and is defined as: Current density, J, measured in Amps/m.
EXAMPLE 4.1 OBJECTIVE Solution Comment
Many solids conduct electricity
Electron & Hole Statistics in Semiconductors A “Short Course”. BW, Ch
BASICS OF SEMICONDUCTOR
Semiconductor Device Physics
President UniversityErwin SitompulSDP 2/1 Dr.-Ing. Erwin Sitompul President University Lecture 2 Semiconductor Device Physics
President UniversityErwin SitompulSDP 3/1 Dr.-Ing. Erwin Sitompul President University Lecture 3 Semiconductor Device Physics
CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.
PHYSICAL ELECTRONICS ECX 5239 PRESENTATION 01 PRESENTATION 01 Name : A.T.U.N Senevirathna. Reg, No : Center : Kandy.
Overview of Silicon Device Physics
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473.
Current Density and Drift Velocity Perfect conductors carry charge instantaneously from here to there Perfect insulators carry no charge from here to.
J Current And Resistance Current Density and Drift Velocity Perfect conductors carry charge instantaneously from here to there Perfect insulators.
Outline Review Material Properties Band gap Absorption Coefficient Mobility.
Read: Chapter 2 (Section 2.2)
Review of semiconductor physics
Semiconductors Chapter 25.
Basic Physics of Semiconductors (1)
반도체 기초 이론 Vol. I Semiconductor Fundamentals by R. F
In term of energy bands model, semiconductors can defined as that
Ashutosh Barua ECE - ASET
Presentation transcript:

Carrier Motion - Electric Fields ECE 2204

Movement of Electrons and Holes Nearly free electrons can easily move in a semiconductor since they are not part of a chemical bond between atoms. Valence electrons are shared between atoms. It turns out that a valence electron can also exchange places with another valence electron that is being shared with a different atom.

Since valence electrons can move, holes can move also.

Carrier Mobility and Velocity Mobility - the ease at which a carrier (electron or hole) moves in a semiconductor ▫Symbol:  n for electrons and  p for holes Drift velocity – the speed at which a carrier moves in a crystal when an electric field is present. The electric field is the force applied to the carrier. ▫For electrons: v d =  n E ▫For holes: v d =  p E

Carrier mobility The ease at which electrons and holes can move depends on the semiconductor material. ▫Nearly free electrons in direct semiconductors are faster than nearly free electrons in indirect semiconductors. Extremely high speed electronic devices are usually made from these materials. Semiconductor  n (cm 2 -V -1 -s -1 )  p (cm 2 -V -1 -s -1 ) Si Ge2000 GaAs

Direction of Carrier Motion Suppose we consider a piece of intrinsic semiconductor to be a resistor (which it is) and attach a dc voltage source to it. ▫Let say that the length of the semiconductor is L, its width is W, and the height is Z. ▫The magnitude of the voltage source is Va.

VaVa Z L W VaVa

Resistance The equation for resistance that we used in ECE 2004 is shown below. R is resistance in .  is resistivity with units of  -cm. L is the distance that the current has to flow as it enters and leaves the resistor. WZ is the cross-sectional area A of the material.

Resistivity and Conductivity Fundamental material properties

Questions Since the resistance of the semiconductor depends on its geometry ▫What do you expect to happen to the resistance of the Si bar if L increases? ▫How about as either W and H increases?

Current Current that is a result of an applied electric field is called a drift current.

Drift Currents

eV a ECEC EVEV EFEF e h h e VaVa IpIp InIn Energy Diagram Slopes on the energy diagram indicate that an electric field is present at that location.

Questions Assume that the electron and hole mobilities are constant. ▫What happens to the resistance of the Si bar as the temperature increases? Suppose there were bars of Si, Ge, and GaAs that had exactly the same dimensions. ▫At a particular temperature (say 300K), which bar has the lowest resistance?