Ppt on schottky diode testing

Chap. 8 Integrated-Circuit Logic Families

On에서 Off 되는 시간 Schottky Barrier Diode 0.2 0.4 0.6 V i Forward Bias Schottky Transistor = * Schottky Barrier Diode(SBD) 금속과 반도체를 연결하면 ECL 보다는 느리지만 동작속도가 빨라짐(0.25 - 0.4 Volt에서 동작) 74LS : Low-power Schottky TTL Lower-power (2 mW) Slower-speed (9.5 ns) 74AS : Advanced Schottky TTL Fastest TTL series /s dielectric insulation Precautions to protect from ESD (ElectroStatic Discharge) 1) Connect the chassis of all test instruments, soldering-iron tips, and your work bench to earth ground 2) Connect yourself to earth/


LEREC INSTRUMENTATION DEVELOPMENT 6-4-15 TOBY MILLER.

– BPM(s)… 1 or 2? – Profile Monitor – Cathode Camera Recombination Monitor – Results from tests with Pin Diode BLMs – Pending Scintillator Test Links: – Instrumentation Wiki for LEReC: http://www.cadops.bnl.gov/Instrumentation/InstWiki/index.php/Low_Energy_Electron_Cooling – / spread and adjust optics accordingly – Look for evidence of cooling, adjusting scanning energy if necessary Using Schottky Monitor to look for Au +78 peak or cooling peak Using Synchronous Kick Recombination Monitor Discussing the /


1 Chapter 3. Digital Circuits. 2 Logic signals Digital logic values : “0” & “1” Called binary digit or bit Mapping the infinite set of real analog values.

logical and electrical characteristics Different manufactures typically specify additional parameters Varying in how they specify the parameters Usually showing the test circuits and waveforms 23 Data sheet ( 소자 제작자가 작성하여 공급 ) 54/74HC00 quad NAND gate 24 Electrical behavior / (ECL) The key to reducing propagation delay in bipolar logic family Preventing a gate’s transistors from saturating Schottky diodes ECL (emitter-coupled logic) (or CML: current-mode logic) ECL families Small voltage swing between Low &/


Chap. 8 Integrated-Circuit Logic Families

On에서 Off 되는 시간 Schottky Barrier Diode 0.2 0.4 0.6 V i Forward Bias Schottky Transistor = * Schottky Barrier Diode(SBD) 금속과 반도체를 연결하면 ECL 보다는 느리지만 동작속도가 빨라짐(0.25 - 0.4 Volt에서 동작) 74LS : Low-power Schottky TTL Lower-power (2 mW) Slower-speed (9.5 ns) 74AS : Advanced Schottky TTL Fastest TTL series /s dielectric insulation Precautions to protect from ESD (ElectroStatic Discharge) 1) Connect the chassis of all test instruments, soldering-iron tips, and your work bench to earth ground 2) Connect yourself to earth/


EE 5340 Semiconductor Device Theory Lecture 8 - Fall 2009 Professor Ronald L. Carter

book. Calculator allowed A cover sheet will be included with full instructions. See http://www.uta.edu/ronc/5340/tests/ for examples from previous semesters. L 08 Sept 173 Si and Al and model (approx. to scale) q/Metal/semiconductor system types n-type semiconductor Schottky diode - blocking for  m >  s contact - conducting for  m <  s p-type semiconductor contact - conducting for  m >  s Schottky diode - blocking for  m <  s L 08 Sept 1711 Real Schottky band structure 1 Barrier transistion region, /


Modeling, Characterization and Design of Wide Bandgap MOSFETs for High Temperature and Power Applications UMCP: Neil Goldsman Gary Pennington(Ph.D) Stephen.

= 300 o C x 10 24 Source Drain Negligible until very large bias voltages Experiment and Simulation of n-type 4H-SiC Schottky diodes Moving from 6H to 4H SiC Improved Bulk Mobility Higher Breakdown Voltage Schottky: Introduction Experiment: -IV measurements under different temperatures were performed in ITS8000 testing system. Simulation: -Using a simulator based on the drift-diffusion model Ohmic contact Metal/Ti/


Institute of Microwaves and Photonics SCHOOL OF ELECTRONIC AND ELECTRICAL ENGINEERING, FACULTY OF ENGINEERING Development of integrated QCLs for local.

Steps – THz QCL micro- machined blocks Integrate THz QCL with Schottky diode for direct detection: Optimising the power-coupling from the QCL into the waveguide Test efficiency of power coupling in micro-machined waveguides, to start /Mission plan and cost estimate. NERC Critical Component Development (RAL PI): QCL development and waveguide demonstration; THz Schottky diode development; Integrated QCL & Schottky proof of concept. CEOI-ST Critical Payload Development (Leeds PI): 1.1 THz (Band 3) full/


Standard Products Business Promotion

1 2 5 10 RDS(on)(VGS=4.5V) typ ( m Ω ) Low Conduction Loss MOSFET: New “BEAM” Series Target Application < Test Conditions >  Vin=12V, Vout=1.2V, VDR=5V,fsw=350kHz, L=0.45uH, No Air flow Server(CPU,Memory) DT/NB-/(four devices/package, two devices/package) VSON-5 (four devices) Support for Lead-Free and Halogen-Free Products Diode: Application Examples and Packaging  Schottky Schottky Diodes for Circuit Protection High-Intensity LED LED and LCD Drivers CAN and LIN Bus (Bi-Directional Type)  Automotive /


LEReC INSTRUMENTATION DEVELOPMENT 7-16-15 T MILLER.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


Renesas Electronics America Inc. Power and Standard Products Consumer and Industrial Business Unit June 24, 2010.

MFP12:RKP411KS MP6-8,MP6-12 Tunable Antenna VariCap Diodes for tunable antenna RKV652KL, 653KL RKV654KL, 655KL Rectifier diodes of Connection Terminal Schottky Diodes Back Current Stopper For Battery Schottky Diodes for Circuit Protection Protection for external signal line Zener Diodes for ESD surge Absorption RKZ7.5TKL/KP RKZ6.8Z4KT RKZ***KL/KP series Protection for LCD drivers Schottky Diodes for Latch-Up Phenomena HSL226, HRL0103C RKD703K*, RKD704KP SMPS/


LEReC INSTRUMENTATION DEVELOPMENT 6-25-15 D Gassner.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


LEReC INSTRUMENTATION DEVELOPMENT 6-27-15 T MILLER.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


LEReC INSTRUMENTATION DEVELOPMENT 9-24-15 T MILLER.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


LEReC INSTRUMENTATION DEVELOPMENT 6-18-15 D Gassner.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


LEReC INSTRUMENTATION DEVELOPMENT 10-1-15 T MILLER.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


LEReC INSTRUMENTATION DEVELOPMENT 10-8-15 T MILLER.

was pointed out of looking for a corresponding Au+78 revolution line in the Schottky monitor. Notes from previous meeting (4-16-15) The preliminary results from Animesh’s tests were discussed with a pertinent question whether the results refer to an absolute accuracy/-kick planned) – Determining how much power will be needed in the kick – Picking up enough signal from the PIN Diode LMs detecting Au+78 ions collected on the collimators. We may have to move to scintillators & PMTs for greater sensitivity./


College Name : Shree Swami Atmanand Saraswati Institute Of Technology(SSASIT)(076) Year : 2 nd year(3 rd sem) EC-2015 Subject Name : Electronic Devices.

before it is damaged is IZM. The zener voltage VZ, specified in the datasheets is the voltage at the zener test current IZT. Temperature Coefficient Temperature coefficient () describes the percent change in zener voltage for each degree Celsius change in/the pn junction is related to the wavelength of the laser. The Schottky Diode Schottky diodes (Figure 21) are high current diodes used in high frequency and fast switching applications. A schottky diode is formed by joining a doped n-type with a metal such /


Chapter 4 Components & Circuits (Part 2)

1.5 Volts (approx.) Active Components Semiconductor Components Diodes & Rectifiers Diode Types PIN diode. Low forward voltage drop. RF switching & control. Active Components Semiconductor Components Diodes & Rectifiers Diode Types Schottky Diode. Low junction capacitance allows operation at VHF & UHF/.999) 3½ digit  0.05% resolution. DO NOT CONFUSE RESOLUTION WITH ACCURACY! Basic Test Equipment Analog & Digital Meters Multimeters. Analog. D’Arsonval movement. Rotating coil suspended between permanent /


I could be brief… LHC OP days 2012 …… WHAT YOU GET ….. ORBIT / TUNE MEASUREMENT AND FEEDBACK M. ANDERSEN, C. BOCCARD, S. BOZYIGIT, E. CALVO, M. FAVIER,

Orbit feedback Status Interlock BPMs Tune and Tune Feedback Upgrades and Develoment of Gated BBQ Tune feedback at 7TeV Schottky monitors after LS1 Detection and Measurement of Transverse Instabilities Time domain vs Frequency domain measurements Possible plan for LS1 / measurement but could be gated (not implemented yet !) Tested in SPS on collimator BPM prototype and in LHC @Pt 5 on BPMSW 7 BPM with DOROS Resolution <100nm Non linearity of diode to be taken into account Visible scaling error wrt normaliser/


P.1 PFC Device Corp. Taiwan Branch PFC Company profile 2015/04/23 Presenter by Jason Chang.

Leakage Current Depletion Region P.13 PFC Device Corp. Taiwan Branch Rectifier Wafer Technology Comparison Device PN-Junction Diode Fast Diode Schottky Barrier Diode PFC MOS-SKY Forward Voltage, VfHighVery-HighLowUltra-Low Reverse Leakage Current, Ir Low HighUltra-Low Surge reliabilityHigh / Corp. Taiwan Branch PFC Device vs. Ixx +0.2% Test Condition : 240W PC power @ PFC stage Package : TO-220 P.25 PFC Device Corp. Taiwan Branch PFC Device vs. Ixx Test Condition : 500W PC power @ PFC stage Package : TO-247/


Semiconductor Theory and Devices

variation of standard carbon resistors is given by where A, B, and K are constants. Test of the Clement-Quinnell Equation Figure 11.7: (a) An experimental test of the Clement-Quinnell equation, using resistance versus temperature data for four standard carbon resistors. The/, but it is typically on the order of microns. The I-V characteristics of the Schottky barrier are similar to those of the pn-junction diode. When a p-type semiconductor is used, the behavior is similar but the depletion region has /


CHAPTER 11 Semiconductor Theory and Devices

variation of standard carbon resistors is given by where A, B, and K are constants. Test of the Clement-Quinnell Equation Figure 11.7: (a) An experimental test of the Clement-Quinnell equation, using resistance versus temperature data for four standard carbon resistors. The/, but it is typically on the order of microns. The I-V characteristics of the Schottky barrier are similar to those of the pn-junction diode. When a p-type semiconductor is used, the behavior is similar but the depletion region has /


Chapter 9 Logic Families and Their Characteristics 1.

saturated 74SXX TTL series adds a Schottky diode between the base and collector. 74SXX TTL series adds a Schottky diode between the base and collector. 27 Schottky TTL Lower-power Schottky (LS) Lower-power Schottky (LS) Power consumption significantly reduced Power/Gates 30 Handling CMOS devices Avoid electrostatic discharge Avoid electrostatic discharge Ground work station, test equipment and soldering irons Ground work station, test equipment and soldering irons Wear a wrist strap Wear a wrist strap Don’t/


Ting-Chi Lee OES, ITRI 11/07/2005 GaN-based Heterostructure Field-Effect Transistors.

of GaN HEMT Switches For high-power switching applications  GaN schottky diodes  GaN p-i-n diodes  GaN HEMT-based switching devices  GaN MOSHFET-based switching devices For microwave power amplifications  GaN Schottky diode  AlGaN/GaN HEMTs  AlGaN/GaN MOSHFETs  GaN-/any effect on the device reliability ?? u Thermal aging tests at different temperatures for 2h were performed to observe it Thermal aging tests: N 2 ambient Thermal aging tests: Air ambient Discussion n After thermal annealing u TiN form/


US-LHC Activities in AD Tanaji Sen. Overview Overview The LHC The LHC US-LHC Construction Project US-LHC Construction Project US-LARP Goals and Activities.

tune measurements from the Schottky monitors. More sensitive than the Schottky. The Direct Diode Detection method (3D BBQ) from CERN implemented in the Tevatron – complements tune measurements from the Schottky monitors. More sensitive than the Schottky. This 3D BBQ /a proposed LHC injector Optics design of a proposed LHC injector Design of Schottky Monitor Design of Schottky Monitor Tests of tune and chromaticity tracking Tests of tune and chromaticity tracking Proposed new initiatives: AC dipole, E-lens,/


© Vibro-Meter Confidential and subject to Export Control as per Front PageGEnx EMU DDR 18 November 2008Section 2.5 PSU Slide 1 EXPORT CONTROL THE INFORMATION.

a very high leakage current at high temperature  for high temperature conditions, power dissipate on diode may increase its temperature near its maximum operating temperature. For reability improvement, this schottky diode must be replaced by a diode with lower leakage current. High temperature tests confirm that this diode present a risk of failure for very high temperature conditions Low current < 20mA (used to supply internal regulator/


ABCs of Power Electronic Systems

Donts of Using MOSFETs Be Mindful of Reverse blocking characteristics of the device A vertically conducting device Handling and testing power HEXFETs Unexpected gate-to-source voltage spikes Drain or collector voltage spikes induced by switching Pay attention to / have a short-circuit condition across, usually, a transformer Timing is critical The MOSFET body diode may come on Placing a Schottky diode in parallel with the body diode will not, in all cases, reduce power loss – Ramp down effect Very low Rds-/


1 ASEVA WORKSHOPS 2008 WS-22:Gas and Radiation Sensors: Properties, Characterisation. Thin Films Based Sensors Salamanca, Spain. July 7-9, 2008 Faculty.

lbach and Klaus Schierbaum University of Düsseldorf, Institute of Experimental Condensed Matter Physics, Department of Materials Science Schottky diodes, revealing sensing properties, are known for silicon (PdAg/thin SiO2/Si for H2 sensing and Pd/SiC/trans-whiky lactone and eugenol) have been quantified. The chromatographic method showed good linearity over the concentration range tested, with correlations of the calibration coefficients higher than 0.99 for all studied compounds. Results obtained using the/


Wir schaffen Wissen – heute für morgen PSI,3. Oktober 2015PSI,3. Oktober 2015PSI, Paul Scherrer Institut SwissFEL Diagnostics: Overview and Status (a selection.

Compression Monitor (design by Franziska Frei & Dani Treyer) SwissFEL Diagnostics: Overview and Status quasi-linear behaviour of Schottky diode signals within the nominal operation range of BC-1 compression monitor (10 – 200 pC) stability requirement of/Volker Schlott, Status, Conclusions & Outlook → SwissFEL Diagnostics is ready for ARAMIS commissioning → most monitors have been successfully tested at SITF, FLASH, FERMI and LCLS → all monitors and fulfill SwissFEL requirements and will be feedback-ready → /


M.Gasior, CERN-BE-BI 1 3D & the BBQ - Observing beam oscillations with sub-micrometre amplitudes Talk based on a Beam Instrumentation Workshop presentation.

RF Schottky diode can handle up to 50 V of beam pulses; more is possible with a few diodes in series (LHC detectors have 6 diodes).  Betatron modulation is downmixed to a low frequency range, as after the diodes the/ measurements; Andrea Boccardi: FPGA programming, design and implementation of digital signal processing algorithms, acquisition system design, LabView test software, lab and beam measurements; Ralph Steinhagen: TuneViewer author, design and implementation of data processing, data visualisation,/


port 1) - wave b2 (generated at port 2) - evaluate DUT = Device Under Test DUT 2-port Zg=50 4-port Matched receiver or detector Directional Coupler prop. a1 /diodes: for tuning applications PIN diodes: for electronically variable RF attenuators Step Recovery diodes: for frequency multiplication and pulse sharpening Mixer diodes, detector diodes: usually Schottky diodes TED (GUNN, IMPATT, TRAPATT etc.): for oscillator Parametric amplifier Diodes: usually variable capacitors (vari caps) Tunnel diodes/


Wireless Power and Data Transfer for Sonar Array Applications By: Ricardo M. Silva Advised by: Dr. Rajeev Bansal (Univ. of Connecticut) Mr. Michael Sullivan.

to power more than two sensors Monopole antenna position in the waveguide prevented multiple sensors from being powered Schottky diodes were operating at their power extremes causing thermal degradation over operational time Very basic telemetry system with high /To be conducted during year 2004 To be conducted during year 2004 Implement design Implement design Test prototype Test prototype Phase–1 Overall Architecture BROAD BAND PRESSURE SENSOR WIRELESS ARRAY CONFIGURATION COMPLIANT TUBE BAFFLES METAL/


Efficiency Through Technology IXDN0045 Rev A. COMPANY OVERVIEW Industry Leader in Power Semiconductors Improving Power Conversion Efficiency NASDAQ: IXYS.

Distribution Principal External Foundry (Samsung, Korea) MAJOR LOCATIONS - Headquarters Corporate Headquarters IXYS Power High volume automated test (2200 ft² test floor) Wafer sort (over 2000 ft²) QA and Failure Analysis Support FET and IGBT Design Applications Engineering /Drivers Linear (to 550W @175MHz) & Switch Mode series (4nS Tr) – Z-MOS FETs MOSFET & Laser Diode Driver ICs GaAs Schottky Diodes Switch Mode MOSFETs – up to 1800W, up to 1000V IXYS RF Competitive Advantages: Broad range of RF products /


NSREC 2013 Summary Radiation 2 Electronics (R2E) LHC Activities NSREC 2013 Summary Rubén García Alía, Giovanni Spiezia, Slawosz Uznanski.

.nsrec.com/preprints2013.htm Online data workshop record: http://nsrec.com/redw/ NSREC 2013 Summary 3 Summary overview Dosimetry (optical fibers) Destructive SEE events (Schottky diodes) Test approach (high-speed SRAMs) Component scaling (sensitivity to secondary protons + electrons) Laser testing (transistor analysis for deep sub-micron) Moore’s law (FinFETs) NSREC 2013 Summary 4 Dosimetry using optical fibers (E1, F2) Performance of Ge-doped/


Power products commercial roadmap for SiC from – Jeff Casady

SiC diodes first released in 2001 SiC MOSFETs first released in 2011 Reliability Meets All Commercial and Military Requirements Accelerated HTRB Testing at 150°C Accelerated TDDB Testing at 150°C Tested to failure at very high G-S voltages Tested to/reduction from volume and device refinement 600V Schottky MOSFET 1200V Schottky Gen 1 Schottky Gen 1 MOSFET Gen 2 Schottky Gen 3 Schottky Gen 2 MOSFET Solid Lines = Actual Dotted Lines = Projections Gen 3 MOSFET Gen 4 Schottky Gen 5 Schottky 150 mm 100 mm 75 mm /


Understanding and Protecting Against Electrical Overstress (EOS) of Operational-Amplifiers By Thomas Kuehl – Senior Applications Engineer Precision Analog.

1ns Repetitive spike capability Externally connected input protection devices uA J A pF watch capacitance Externally connected input protection devices Schottky diodes provide enhanced input protection Features: Forward voltage V F ≤ 380mV, I F = 1mA Forward currentI F = 200mA max (/may not degrade performance significantly Power Line Communications (PLC) EOS environment – IEC61000-4-5 Open-circuit surge pulse test 4kV, 1.2us t front, 50us t half-value PLC – EOS protection Actual protection scheme will vary with/


Design and Layout Guidelines

added to improve EMI/RFI issues. New Reference Designs and Tests Schematic Signal path RC filter, Ferrite bead, Schottky Diode Array RC filter with cut off frequency is about 36Hz(differential signal) Schottky Diode Reverse Current 100nA (Max) 100nA*2*1K*2%= 4uV(/ Due to the symmetry of signal path, the Reverse Current can be neglected Ferrite bead for input RF filtering Schottky Diode (Reverse Current 100nA) Schematic Analog and digital power Analog and digital power are isolated with L1(100uH) inductor /


CdTe Pixel Detector Development for Synchrotron Radiation Experiments T. Hirono 1, H. Toyokawa 1, M. Kawase 1, S. Wu 1, Y. Furukawa 1, T. Ohata 1, H. Ikeda.

and a longer lifetime than holes in CdTe, have to be collected for high energy resolution. In particular the Schottky type detector functions as a diode device, which reduces the leakage current. Basic Properties of CdTe sensors Pt h e-e- ASIC - HV //mm 2 can be expected Noise level PIXEL2012 Sep 3-7 2012, Inawashiro, T. Hirono JASRI/SPring-8 High Energy Stability Test Stability test was performed with a SP8-02B single chip irradiated by 241 Am Temperature was controlled between -20 ~ +26 degrees. Humidity /


九十八學年第一學期 科目:電子學(一) 班級:電機二甲、電機二乙 授課教師:章國揚 林正平 九十八學年第一學期 科目:電子學(一) 班級:電機二甲、電機二乙 授課教師:章國揚 林正平.

Diodes Testing a diode is quite simple, particularly if the multimeter used has a diode check function. With the diode check function a specific known voltage is applied from the meter across the diode. With the diode check function a good diode/   There are other diode types used for specific RF purposes such as varactor diodes (variable capacitance), Schottky diodes (high speed switching), and PIN diodes (microwave attenuation and switching). Summary   Light emitting diodes (LED) emit either infrared /


Tallinn University of Technology Department of Computer Engineering ati.ttu.ee Centre for Integrated Electronic Systems and Biomedical Engineering CEBE.

RES: Research Fields Dependable Digital Systems (ATI, Raimund Ubar) Design and Synthesis Verification and Debugging Testing and Fault Diagnosis Design for Dependability Integreeritud elektroonikasüsteemide ja biomeditsiinitehnika tippkeskus © Raimund Ubar RES:/ elektroonikasüsteemide ja biomeditsiinitehnika tippkeskus © Raimund Ubar Examples: Schottky diodes EMBEL-II: Research Fields SiC Schottky chips and mounted demonstrators of the same diodes with blocking voltage of 600V, maximum forward current of 100A/


M.Gasior, CERN-BE-BIBE-KT Innovation Day, 3 June 2013 1 Base Band Tune (BBQ) measurement systems - observing beam oscillations with sub-micrometre amplitudes.

detector DC voltages (testing purposes).  DC signals can be measured with lab voltmeters (6 - 8 digit resolution possible).  Simple diode detectors are nonlinear.  A compensation scheme to achieve a linear characteristic. M.Gasior, CERN-BE-BI 16 Compensated diode detector for beam /JFET-input operational amplifier. -The slowest capacitor discharge is limited by the reverse leakage current of the diode (in the order of 100 nA for RF Schottky diodes). V i  V d n bunches M.Gasior, CERN-BE-BI 26 3D & the /


General License Class Chapter 4 Components & Circuits (Part 2)

5 Volts (approx.) Active Components Semiconductor Components Diodes & Rectifiers Diode Types PIN diode. Low forward voltage drop. RF switching & control. Active Components Semiconductor Components Diodes & Rectifiers Diode Types Schottky Diode. Low junction capacitance allows operation at VHF &/interference from strong nearby transmitters. Field Strength & RF Power Meters Field Strength Meters. Basic Test Equipment Measures relative strength of RF field. Determine antenna pattern. Close-in direction finding./


High-Megawatt Variable-Speed-Drive Technology Workshop

JBS Half-Bridge Module Model and Circuit Simulation 10 kV SiC power MOSFETs 10 kV SiC JBS for anti-parallel diodes low-voltage Si Schottky diodes voltage isolation and cooling stack Validated models scaled to 100 A, 10 kV half bridge module Model used to /Solar Inverter (ARPA-E) Utilize 10kV, 120 A SiC MOSFET Module: Design Developed for DARPA/ONR/NAVSEA WBG HPE Program Already tested at 1 MW-scale system for HPE SSPS requirements MV Solar Inverter Goals: Improve cost, efficiency, size, and weight High speed/


Components and Building Blocks Chapter 5. Semiconductor Devices (Materials) Normally made from Silicon (Si) or Germanium (Ge) Atoms of both have 4 electrons.

7 for silicon Results in lower power dissipation Widely used in power supply circuits Point-Contact Diodes Schottky Barrier Lower capacitance than junction diodes – Usually 1pf or less Designed for RF applications Smaller surface area at the junction Better/ TVs Electrostatic deflection – More precise deflection of electron beam – Better for high frequency displays Oscilloscopes and other test equipment Cathode-Ray Tubes An electron beam is accelerated by high voltage and strikes a glass surface coated with /


Intelligent Sensor Network for Extreme Environments I.S.N.E.E Group Members: Iiga, Tiffany Irvine, Joshua Liang, Mary Yuen, Faye.

A. Dr. Chris McKay Work will span 3 semesters: –Fall 2005 – Research –Spring 2006 – Design –Fall 2006 – Build and Test Joshua – “Biosensor”, LIFE, Research Mary – Circuit Design, “Biosensor”, Research, record-keeping Tiffany – Networking/Communication, Circuit Design, Technological /that require a lot of power (ex. RC cars, aeroplanes) Maintained by a continuous low current Schottky Diode Prevents battery discharge at night Low forward-voltage drop Fast switching Typically used for solar cell protection /


EDGE™ prepared by Prof. George Slack (EE) Copyright © 2006 Rochester Institute of Technology All rights reserved. Noise Immunity Transients and ESD Practical.

misuse when connecting to the outside world. Misuse during debug and testing.Misuse during debug and testing. ESD and reverse polarityESD and reverse polarity –Solution: Diode circuits to protect against reduce transientsreduce transients – Solution: Low pass filter EDGE™ Protection Practices Electronic Solutions: Bridge to block reverse polarity,Bridge to block reverse polarity, Schottky diode: very fast switching times and low forward voltage drop. As low/


Renesas Electronics America Inc. Confidential May 2011Rev.1.0 Intermediate Low Voltage Power MOSFETs Christopher Lee, PMD & GP Products Group

V GS =10V I D =45A, V GS =4V V DS =10V V GS =0 F SW =1MHz Parameter Symbol Value Test Condition Temperature Dependence Attention for Design (Ta=25degC) : Have positive temperature coefficient. : Have negative temperature coefficient. There is a V/ All rights reserved. Confidential Schottky Barrier Diode Non-overlap/Dead Time to avoid cross conduction (“shoot-through”) Body diode of a synchronous switch conducts during dead time Body diode is lossy and is slow to turn on/off A Schottky diode (SBD) is used in /


As you wait for the lab to start : Reserve seats for your partners Digital Logic and State Machine Design CS 2204 Lab 4 Experiment 1 Spring 2014.

, cost, power, etc. design goals of the digital product FPGAs are used to test the new chip  A new PCB Which chips and how many is determined by /Data Manual Gates are implemented by electronic components :  Transistors, resistors, diodes, capacitors,… Experiment 1 Lab 4CS 2204 Spring 2014 Page 12 From ON/cost,.. 74 (Standard) 74L (Low-power) 74S (Schottky) 74LS (Low-power Schottky) 74H (High speed) 74AS (Advanced Schottky) 74ALS (Advanced Low-power Schottky) 74F (Fast) Experiment 1 Lab 4CS 2204 Spring 2014/


MVE MURI 99 Kick-off MeetingR. Barker, Technical Monitor Started 1 May 99 October 1999 High Power Millimeter Wave Grid Array Sources* A novel, broadband.

Started 1 May 99 October 1999 Schottky Varactor Devices Frequency doubler grid arrays using Schottky varactors fabricated by Martin- Marietta have been tested. C min = 15 fF, C max = 60 fF resulting in C max /C min = 4 R s = R diode + R strip = 6 Ω/56 devices 7.3 mW per device 6.6 GHz (10%) tuned output bandwidth 3.6 GHz (6%) instantaneous output bandwidth Schottky diodes, fabricated by Martin-Marietta (Baltimore), were used in an overmoded waveguide frequency doubler grid array. MVE MURI 99 Kick-off /


Harry Spence (714)979-8220 or visit our website at: Updated March 98 Recent and Pending Military and Space.

NPN IN TO-254)/613 DIODES 1N821UR-1 - 1N829UR-1 (6.2 V REFERENCE)/159 1N4565AUR-1 - 1N4584AUR-1 (6.4 V REFERENCE)/452 1N5819 (1 AMP SCHOTTKY)/586 1N5822 (3 AMP SCHOTTKY)/620 1N6391 (DO-4 SCHOTTKY)/553 1N6492 (SCHOTTKY IN TO-39)/567 1N6657 /@microsemi.com visit our website at: http://www.microsemi.com Radiation Many MSC Bipolar devices, both Transistors and Diodes are inherently radiation tolerant. Test data to 100K rads is available for some parts. Harry Spence (714)979-8220 or hspence@microsemi.com visit/


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