Ppt on resistance temperature detector manufacturers

Jaakko Härkönen, GSI/FAIR/NUSTAR/S-FRS seminar, Kumpula 6 October 2008 Radiation hard silicon detectors for GSI/FAIR experiments J. Härkönen 1), E. Tuovinen.

university lab) Now RF-IC industry shows interest on high resistivity Cz-Si (=lower substrate losses of RF-signal) Detectors have traditionally made on Fz-Si. Why not before Cz-/ the detector operation. 3.Only way to reduce trapping effects is either: Thin detectors  Small signal,difficult production,high cost. Complex geometries (3D)  Not feasible manufacturing,high cost/C is relatively easily achieved by CO 2 That’s operational temperature of CID detector 2x higher CCE can be achieved at -50 0 C Jaakko/


Presently Used Industrial Thermometers.. Resistance Temperature Detectors P M V Subbarao Professor Mechanical Engineering Department Active Temperature.

between the temperature and the electrical resistance is usually non-linear and described by a higher order polynomial. The Birth of RTD The classical resistance temperature detector (RTD) /resistance thermometer sensor is defined in IEC and DIN specifications. This forms the basis of most industrial and laboratory electrical thermometers. The platinum sensing resistor, Pt100 to IEC 751 is dominant in many parts of the world. Its advantages include chemical stability, relative ease of manufacture/


22nd August 2009Ambleside School Chris Damerell 1 Physics and technology of silicon detectors (with a Linear Collider bias) Chris Damerell (RAL) Basic.

resistivity in region of 10 k  cm Implies dopant concentrations ~10 12 cm -3, ie impurity levels of ~2 in 10 11. Amazingly, the manufacturers/22nd August 2009 12 22nd August 2009Ambleside School Chris Damerell 13 Typical microstrip detector: high resistivity n bulk, heavily doped p-strips, heavily doped back contact Reverse / from p to p+  This barrier is thermally generated, but the ‘penetration coefficient’ is temperature independent, and is simply the ratio of dopant concentrations. eg 0.1/1000, so 10 /


International Conference on High Energy Physics August 5 th, 2016 Detector: R&D and Performance Pilot Production of Large Area Picosecond Photodetectors.

2016MJ Minot, Pilot Production of LAPPD 8 Enabling Technologies: ALD-GCA-MCP Manufacture: O.H.W. Siegmund Nanocomposite resistive layer and secondary electron emissive (SEE) layers Resistive Layers: Chem1 = W/ Al 2 O 3, Chem2=Mo/Al203/ Imager DOE, DE­SC0015729, Resistive coatings for high-performance, low-background MCPs operating across broad temperature ranges and at cryogenic temperatures DOE, DE ‐ SC0009717 Phase IIA - LAPPD Commercialization – Fully Integrated Sealed Detector Devices DOE Personnel: Dr. /


Fast position resolution silicon detectors OUTLINE General properties of position sensitive detectors Column Parallel CCD (CPCDD) Monolithic Active Pixel.

: get rid of FPN, reset noise, 1/f noise MIMOSA 6 (being manufactured) pixel pitch 28x28  m 2 1 array 30x128 pixels – 29 transistors/pixel /) Drawback is larger power consumption: expected noise < 100 e (at root temperature) with resolution of < 5  m current prototype development: 128x128 pixels array/On Insulator (SOI) detector Detector  handle wafer –High resistive –300  m thick Electronics  active layer –Low resistive –1.5  m thick Pixel detector with interleaved pixels Detector: conventional p + /


CARGO COMPARTMENT SMOKE DETECTOR STANDARD AS8036 UPDATE

document to Reflect current test standards Improve false alarm resistance of new designs This presentation will detail the changes to the standard WORKING GROUP FROM THE FAA, SAE, BOEING, AIRBUS AND SMOKE DETECTOR MANUFACTURERS Keely Andrews SAE Ken Bell Kidde Dave Blake FAA /With the test item operating, ramp the humidity to 95 percent relative humidity (RH) at an average 6%/min. Ramp the temperature to 50oC at a rate of 5oC per minute Warm/Moist Dwell. Maintain 50°C, site pressure, and 95 percent relative/


Sensors. What Are Sensors? Devices that change resistance due to – Light – Pressure – Position (angle) –etc… Haptic Perception - involves sensors in the.

. Thermal temperature sensors: thermometers, thermocouples, temperature sensitive resistors (thermistors and resistance temperature detectors), bi- metal thermometers and thermostats heat sensors: bolometer, calorimeter Electromagnetic electrical resistance sensors: /other values Voltage Regulator acting as a temperature sensor (Models LM234, LM 235) –Manufactured by ST (www.st.com) Photo transistor acting as a light sensor (Model LM135) –Manufactured by Fairchild Semiconductors (www.fairchildsemi.com)/


Phosphors and Scintillators in Radiation Imaging Detectors ……incorporated into real world detectors Glenn C. Tyrrell Applied Scintillation Technologies.

. SANDALS: GEM: HRPD: ENGIN-X: 2 nd Target station detectors for 2008 WISH? NIMROD? GEM module from ISIS: courtesy N.J. Rhodes Ce- doped Scintillation Glass extremely robust extremely robust resistant to all organic and inorganic chemicals except hydrofluoric acid resistant to all organic and inorganic chemicals except hydrofluoric acid can easily operate in temperatures ranging from -200°C to 250°C. can easily/


New Materials and Designs of Semiconductor Detectors New developments are driven by particle physics and applications in: Medical & Synchrotron X-ray Imaging.

resistivity- low noise due to surface conductivity (the surfaces should be stable to prevent increased surface leakage currents with time, the electric field lines should not terminate at the non- contacted surfaces for complete charge collection and for preventing build-up of surface charges) Material manufacturing/ (normally ionized at room temperature) conduction band occupied at room temperature NB strong T dependence Two basic devices: p-n diode, MOS capacitor Detector Structure conduction band Band gap/


“DIRAC-PHASE-1” – Construction stage 1 at the international Facility for Antiproton and Ion Research (FAIR) at GSI, Darmstadt Task 8 - HADES1 Resistive.

lack components: 1 MB with one resistor missing 2 MB with some capacitor missing 5 miniMBs manufactured 4 loaded and working properly Summary: All MBs and miniMBs mounted on the detector with 362channels (=181cells) working 50ch (=25cells) not instrumented (around 12%) DIRAC-PHASE-1 TASK 8 – HADES1: Resistive Plate Chamber TOF WallP.Fonte 2 nd Annual Report meeting 11-10-2007 Task: Software/


EST-DEM R. De Oliveira 20 Dec., ‘04 Production of Gaseous Detector Elements  History of Gas Detectors in Workshop  Fabrication of GEM Detectors  Fabrication.

Resist Patterning Resist Image Transfer Copper Etching Resist Stipping Polyimide Etching and Cleaning Raw Material UV Exposure & Development Vacuum deposited copper on polyimide EST-DEM R. De Oliveira 20 Dec., ‘04 Manufacturing Process  Image transfer with film pocket  Copper Etching in a Drawer Machine EST-DEM R. De Oliveira 20 Dec., ‘04 Manufacturing Process  Polyimide Etching in a Static Bath with Temperature/ EST-DEM R. De Oliveira 20 Dec., ‘04 Other Detectors  Micro-groove *  Micro-well * * R. /


Photon Detector with PbWO 4 Crystals and APD Readout APS “April” Meeting in Denver, CO on May 4, 2004 presented by Kenta Shigaki (Hiroshima University,

scintillation light yield temperature dependence scintillation decay time ditto May 4, 2004Photon Detector with PWO and APD / APS Meeting in Denver / Kenta Shigaki7 - Japanese PbWO 4 Crystals -  manufactured by Furukawa, Co/granularity high-resolution electromagnetic calorimeter PbWO 4 – scintillating crystal with smallest Moliere radius APD – compact and magnetic-field resistant readout  properties of key components investigated  several prototypes fabricated/tested in Japan/Europe energy resolution  E /


Ultra-Fast Silicon Detectors Applications Principle of UFSD Time resolution Segmented UFSD 1 Hartmut F.-W. Sadrozinski, Ultra-Fast Silicon Detectors. CPAD.

as a function of fluence, temperature and laser intensity. Investigate restoring /Resistive Sheet with AC-coupled Pixels Conclusions 23 Hartmut F.-W. Sadrozinski, Ultra-Fast Silicon Detectors. CPAD Ultra-Fast Silicon Detectors promise excellent position and time resolution Present proposals for their use deal mainly with the suppression of accidental background from different z-vertices in the same LHC event. We made progress in understanding the principle and the expected performance of UFSD. Manufacturing/


Introduction to Silicon Detectors

width To achieve large W high field region: Low doping (high resistivity) Large biasing voltages 18 Detectors examples ATLAS Strip detectors (high res) F Vbias ~100’sV Q transversal diffusion Vbias ~100’sV Array /manufacture 3D DDTC similar to 3D but easier to manufacture; also Better mechanical strength. n+ F p+ 37 Detector systems HEP experiments: large detector systems 38 Alternative powering schemes: SP DC2DC The ATLAS SCT (semiconductor tracker) detector. The thick red cables on show feed the detector/


Northeastern University Fabrication and Characterization Facilities at the George J. Kostas Nanoscale Technology and Manufacturing Research Center Richard.

at the George J. Kostas Nanoscale Technology and Manufacturing Research Center The center consists of 5000 square feet/Detectors: Secondary In lens (0.2-20kV) EHT (0.2kV-30kV) Northeastern University EDS Analysis – PGT EDS Detector 30 Second Cool down utilizing air-cooled Peltier cooling Operating Temperature/1 Northeastern University Fabrication Northeastern University Optical Lithography Spinner Vacuum Photo resist   Baking SpinnerBaking Hotplates Ovens Northeastern University Optical Lithography /


Temperature Measurements. Interesting Information about Temperatures Comment Kelvin Kelvin K Celsius Celsius °C Fahrenheit Fahrenheit °F Absolute zero0−273.15−459.67.

ethanol or toluene or kerosene or Isoamy acetate, depending on manufacturer and working temperature range. Since these are transparent, the liquid is made /Resistance Thermometers Also called resistance temperature detectors or resistive thermal devices (RTDs), are temperature sensors that exploit the predictable change in electrical resistance of some materials with changing temperature. As they are almost invariably made of platinum, they are often called platinum resistance thermometers (PRTs). Resistance/


Temperature Measurement

Gas bulb thermometers • bimetal indicators • RTD: resistance temperature detectors (Platinum wire) • thermocouples • thermistors • IC sensors • Optical sensors ⊲ Pyrometers ⊲ Infrared detectors/cameras ⊲ liquid crystals IC Temperature Sensors • Semiconductor-based temperature sensors or thermocouple reference-junction compensation • Packaged suitable for inclusion in a circuit board • Variety of outputs: analog (voltage or current) and digital • More useful for a manufactured product or as part of a control/


GaAs radiation imaging detectors with an active layer thickness up to 1 mm. D.L.Budnitsky, O.B.Koretskaya, V.A. Novikov, L.S.Okaevich A.I.Potapov, O.P.Tolbanov,

through whole the detector with the thickness up to 1 mm 11 Technological cycle of manufacturing GaAs compensated with Cr n-GaAs GaAs:Cr with  up to 10 9  *cm 12 Resistivity distribution in the slice thickness The experimental values of the resistivity are (0.2/1000V. 18 Conclusion The technology of high temperature Cr doping of n-type GaAs allows to produce the high resistive GaAs layers with resistivity up to 10 9  *cm and thickness up to 1 mm. The detector structures based on GaAs:Cr have more/


Interchangeability based Design of Resistance Temperature Detectors

Interchangeability based Design of Resistance Temperature Detectors P M V Subbarao Professor Mechanical Engineering Department Connection and Use of Active Temperature Detectors…… Potential Sources of Error with RTDs Resistance thermometer systems are susceptible to/ example, manufacturers may alter their calibration procedures to fix the reference temperature and tightest tolerance at a point other than 0°C. Or if the difference between two thermometers is more important than absolute temperature, matched /


1 HVACR – Refrigeration Safety. 2 Pressure Safety Dangerous pressure buildup can occur with increases in vessel temperature. Avoid potentially dangerous.

Dangerous pressure buildup can occur with increases in vessel temperature. Avoid potentially dangerous situations by: −Storing refrigerant /other slipping hazards. Be sure ladders have slip-resistant feet. Secure the ladder in place whenever possible./special leak detectors and alarms are in place for certain applications, be sure these detectors are functioning /or cold. −Exercise caution around moving machinery parts. −Follow manufacturer’s instructions for proper use and storage of chemicals. Observe /


Sensor Quality Assurance for the ATLAS SCT Dave Robinson Cambridge University Workshop on Quality Issues in Current and Future Silicon Detectors CERN 3-4.

and to set reasonable limits where possible to ensure that manufacturers are contractually obliged to take back detectors that are mechanically or electrically defective 7 Action or MeasurementManufacturerSCT/ : 02/05/2001 PASSED : YES PROBLEM : NO RUN NUMBER : A0000225.dat %DetIVscan Temperature : 22.88 I LEAK 150 : 0.11 I LEAK 350 : 0.17 %Test RawData/150V bias) <1.1pF/cm R interstip >2xR bias at operating Bias Strip metal resistance <15  /cm Strip quality >99% good strips per sensor Acceptance Criteria – /


PHENIX Detector Upgrade for Triggering Fast Muons from W-Boson Decays Using RPC Technology Xiaochun He, Georgia State University For PHENIX Collaboration.

manufacture (CMS bakelite vendor) Riva, Italy Bakelite cutting (CMS bakelite cutting company) PHENIX, BNL, US RPC group: Installation (help from PHENIX technicians) Commissioning Operation monitoring of RPCs Nevis Lab. at Columbia University, US Electronics (use CMS RPC discriminator chip) General Tecnica, Italy Bakelite cleaning (CMS bakelite cleaning company) RPC Detector/high temperatures and densities with heavy ion collisions and the proton spin via polarized proton-proton collisions. A fast resistive /


Comparison of Competitor Refractive Index Detectors.

manufacture their own detector These companies use Shodex detector/parts Overview of RID Sales Global ELSD Market - ca. 2500 units/year Key RI performance Parameters 4 Comparing performance specifications between RI detectors/µL (prep) Temperature Range: Not Stated Features None stated - this is a simple standalone RI detector with analogue output /Temperature Range: OFF, 30-50 °C Features Low dead-volume flowcell Automatic lamp brightness compensation for flowcell stains Soft keypad for solvent resistance/


LHCb Week, CERN, may ‘00M. Ferro-Luzzi LHCb Vertex Detector System: An Update Review of TP design mechanics, wake field suppression, vacuum system, cooling.

resistance R herab = R lhcb  10  m/5  m  7mm/12.7mm  R lhcb  1.1  heat load P lhcb = P herab  10 2  2 / 1.1  180 (goes mostly to Si modules!) and HERA-B observed already a strip temperature increase. have to come closer to the beams than the detector/ RF penetration, pick-up E peak  1.3 × 10 9 V/m Easier to manufacture (more freedom in design) corrugation depth More resistance to differential pressure expect about ? mbar Continue developments to reduce foil thickness, while acquiring experience /


FROM SILICA TO SILICON WAFER

)k-1 p - normalized length (p = 1 for Lmax) k - segregation coefficient Resistivity [mWcm] resistivity CLIQUID = 1,0 x 1019 cm-3 CSOLID = 3,5 x 1018 cm-3 /for defects. Also, the ends of the ingot are removed. X-ray source Detector Cropped Ingot Chapter 3 Overview Introduction What is Inside an Electronic Device? Silicon Silicon/degree of filtration and it has controlled temperature and humidity. Therefore special clean rooms are built for semiconductor devices manufacturing. These are the rooms with a /


The SLHC Program and CMS Detector Upgrades Yasar Onel University of Iowa October 30, 2008 ICPP Conference Istanbul* * memorial for Engin Arik and her colleagues.

Si devices which are intrinsically highly oxygenated & high resistivity – Using p-type MCz Si wafers instead of n/study ECAL: PBWO4 Crystal: Stays – Sufficiently radiation tolerant – Exclude on-detector electronics modifications for now -- difficult: Regroup crystals to reduce  tower/and 73.5 Mrad of gamma radiation. – Polymicro manufactured a special radiation hard anti solarization quartz plate. /lifetime of 3.2 microsec!! And looks like this is temperature dependent (Macalik et. al. Appl. Physc. B55, 144/


CERN/NA62 GTK Meeting July, 10 th, 2013 CERN/NA62 GigaTracKer Hybrid Module Manufacturing Fraunhofer Institute for Reliability.

de CERN/NA62 GTK Meeting July, 10 th, 2013 Hybrid Module Manufacturing Step 1: Sensor wafer processing UBM on silicon sensors Step 2:/3D Computed Tomographyyes (optional) Maximum Inspection Area600 mm x 550 mm Real-time Detector Resolution 2 MPixel (optional 4 MPixel) and 24" monitor Detail Detectability<0,3/ resistance meter thomas.fritzsch@izm.fraunhofer.de CERN/NA62 GTK Meeting July, 10 th, 2013 Thermal Cycling Test Programmable temperature test chamber 100 cycles Temperature Range: -20°C/+70°C Temperature/


Reducing the Iron in the Endcap Yoke of CLIC_SiD Benoit Curé, Konrad Elsener, Hubert Gerwig, CERN CERN, June 2014 Linear Collider Detector Magnet Meeting.

of RCs (2 end caps): 2 x 2260 kW. Water cooling system characteristics: Estimated temperature increase ≈ 45°C, Total water flow (2 end caps): 2 x 57 m 3/ Collider Detector Magnet Meeting Other cases: Wrt the ring coils defined for L=5m: Case 1- Resistive ring coils x2 in size, total power x2. Case 2- Resistive ring / magnetic field shaping. The yoke material + manufacturing budget can be considerably reduced with ring coils. The cost estimate for manufacturing, infrastructure and operation of the ring coils/


CdZnTe Energy Resolving Array Detectors Paul Seller

detectors now can have Indium rectifying anode contacts to reduce leakage and inter-pixel isolation. Important to passivate sides to reduce leakage. Need to remove surface damage (100-200um) and TeO layers before contacting. Etch with Br:Methanol. Contacts increase resistance (less leakage than bulk) Energy Resolving CZT arrays Manufacturers/ inclusions but it might still have trapping sites. Watch operating temperature as low temperature increases trapping. Can produce large CZT crystals with low trapping:/


Semiconductor Detectors for Particle Physics

Blocked Impurity Band detectors. 18/11/2004 T. Bowcock Photodiodes High impedance through the depletion region High impedance at elevated temperatures, compared with photoconductors/ producing oxide that contains few defects. Typically for modern strip detectors, depending on manufacturer and process, one observes about 1 pinhole for every 1-10cm2/ load. ENC  Cd Sensor leakage current (shot noise). ENC  √ I Parallel resistance of bias resistor (thermal noise). ENC  √( kT/R) Total noise generally expressed /


Jean-Marie Brom (IPHC) – 1 DETECTOR TECHNOLOGIES Lecture 3: Semi-conductors - Generalities - Material and types - Evolution.

50 10 16 New Materials : DOFZ : O2 doped FZ Silicon (Oxydation of wafer at high temperature) MCZ (Magnetic Czochralki) - Less resistivity ≈ 1.5 kΩcm - O2 contens > 5 10 17 EPITAXIAL growth : Chemical Vapor Deposition/ – brom@in2p3.fr 40 Semiconductors : Challenges and Evolutions 3D Silicon Detectors Manufacturing challenge Electrodes : dead zones Efficiency vs fluence Jean-Marie Brom (IPHC) – brom@in2p3.fr 41 Semiconductors : diamonds Diamond detectors CVD Diamond Si Z614 Energy Gap5,5 eV1,21 to 1,1eV /


Rudolf Žitný, Ústav procesní a zpracovatelské techniky ČVUT FS 2010 Temperature (thermocouples, thermistors) Experimental methods E181101 EXM2 Some pictures.

voltage) Thermocouples  RTD (Resistance Temperature Detectorstemperature dependent electrical resistance) – thermistors (semiconductors) RTD  Infrared thermometers Infrared /manufactured by lithography EXM2 Thermocouple types Type K (chromel-Alumel), sensitivity 41 µV/°C J (iron–constantan) has a more restricted range than type K (−40 to +750 °C), but higher sensitivity 55 µV/°C E (chromel–constantan) has a high output (68 µV/°C) which makes it well suited to cryogenic use N (Nicrosil–Nisil) high temperatures/


SMOKE, HEAT, AND CO DETECTORS

shower. 3 FEET SMOKE DETECTORS MUST BE PLACED AT LEAST 3 FEET AWAY FROM HVAC REGISTERS AND CEILING FANS OR INSTALLED PER THE MANUFACTURES INSTRUCTIONS. INSTALLATION OF SMOKE DETECTORS Smoke detectors should be mounted on /developing fires combination detectors add a fixed temperature element that will ultimately respond when the fixed temperature element reaches the design threshold. Fixed temperature heat detectors This is the most common type of heat detector. Fixed temperature detectors operate when the/


EE Semiconductor Electronics Design Project

Detector in Radio Sets 1947 - BJT Constructed by Bardeen and Brattain 1959 – Integrated Circuit Constructed by Kilby Semiconductor Manufacturing Process Semiconductor Manufacturing Process Fundamental Processing Steps 1.Silicon Manufacturing a) Czochralski method. b) Wafer Manufacturing/protective overcoats. Key Variables in Oxidation Temperature - reaction rate - solid state diffusion/high throughputs - use comparably cheap equipment - can have resist adhesion problems - can etch just about anything Example /


Chapter Two – Optical Power Measurement

Detectors For highest accuracy Reference plane on large thermal mass – to maintain constant temperature during the relatively long measurement times Blocking of background radiation and stray light – using a jacket with thermal isolation Optimization of heat flow – a negligible thermal resistance/due to power-meter calibration It is assumed that the power meter is regularly calibrated following the manufacturer’s recommendations and that the wavelength correction is set to the wavelength of the source The /


SilcoTek Corporation Coatings for inertness and corrosion resistance Information, Questions and where coatings are being used.

Day 0,7,19,50 Direct Interface Gas Sampling Atomic Absorption Detector SilcoNert 2000 treated Regulator and Tubing Mercury 50 Day Stability Chemisorption / resistance to analytical equipment –Maintain inert sample pathway –More inert than Inconel, Hastelloy, or glass. Ideal for 10ppm levels or higher High Temperature: –High temperature / received from manufacturer Ability to achieve lower base pressure with smaller pumps Faster process cycle time vs. uncoated systems Superior high temperature stability up /


Chemical Sensors Can we selectively detect chemicals? (what use is this?) Can we detect classes of chemicals? (An electronic tongue or nose!) Sensors (detectors/transducers)

sensor Bosch (Germany) and NTK (Japan) are largest manufacturers of so- called lambda sensors. ZrO 2 sensor operating /detector differs from that of the compensator. Pellistor Principles The bridge is supplied with a constant dc voltage that heats the elements to 500-550°C. A chemical reaction (oxidation) occurs when a combustible gas reaches the sensing element. This increases the temperature of the element. This T rise is transmitted to the platinum heater coil which causes an increase in the resistance/


Chapter 6 RESISTANCE THERMOMETRY. 6.1 Principles A resistance the thermometer is a temperature-measuring instrument consisting of a sensor, an electrical.

characterize resistance the thermometers are simplicity of circuits sensitivity of measurements, and stability of sensors. 6.2 Sensors The sensors [2],[3] can be divided conveniently into two basic groups: resistance temperature detectors (RTDs/ [9] on success in producing metallic oxides that had high negative coefficients of resistivity and exhibited the stable characteristics necessary for manufacturing to reproducible, specifications. Thus thermistors ( a contraction for "thermally sensitive resistors") /


1. Sound Barrier System 128 Research and Development Overview D.Moses Consulting has joined forces with Compound Security Systems of the U.K., our manufacturer.

withstand extremes of both temperature and humidity and using solid-state transducers to operate at high power efficiency for extended periods. 5 SBS 128 Enclosure The enclosure has been designed to resist a high level of attack, being manufactured in high-grade 12/. Recommended separation between units is 35 ft with an HX40 detector mounted at the center point. Each individual sounder is programmed to operate on activation of one or more selected detectors, which allows for both the sounder to the right and/


Peter Göttlicher, DESY, Prague 2007-09-06 1 - Introduction: Parameters from accelerator, physics, detector - Physics prototype - System aspects: electromechanical.

and small height connectors Technique to get long modules: - manufacture standard sized PCBs: costs and fancy designs - interconnect boards with/, Prague 2007-09-06 20 DAQ: In Detector Electronics In detector are:Detector Interface per layer Link/Data-Aggregator per module /Resistance inside the Gap The 2.2m long structure: composed out of 6 small sized boards: Each connection has a resistance/ASIC with size A ASIC air gap with d air Temperature difference at air gap: without convection (small gap)/


System Overview Model 2086 Ultraviolet Coat Skip Detector Technology Bruce T. Dobbie.

16" (1.5mm) diameter in any translucent web material that has ultraviolet resistive coating applied to it. The coating, which acts as an opaque barrier/from salable material. Small defect monitoring provides what some web material manufacturers consider valuable production analysis on overall process machinery operation and potential / temperature. The display enclosure is formatted as a stand alone unit with touchscreen functions with optional remote station integration capabilities. Coat Skip Detector /


Strips and Pixels Detectors Associated Electronics Jean-François Genat LPNHE Paris Louvain la Neuve, Jan 16th 2008 J-F Genat, LLN Jan 2008.

range  rays, high position resolution using thin detectors Collection - Drift under depletion field: reverse biased PN junction Voltage needed depends upon resistivity : high resistivity Silicon (1e4  /cm) to deplete at / J-F Genat, LLN, Jan 16th 2008 Silicon Manufacturers HamamatsuJapan CanberraBelgium SINTEFNorway3D Micron UK CSEMSwitzerland VTTFinland3D CiSGermany ISTItaly / hole mobilities in Silicon vs dopants densities at various temperatures Front-ends NA60 AFP chip (CERN) Cryogenic Silicon beam/


Vertex detector optimisation: status and strategies

now being manufactured. Stripline clock bus Main clock wire bonds Extra pads for clock connection CPR-1 CPR-2 Temperature diode Charge /resistivity silicon substrate, sensitive over full volume. Electrons collected on internal gate, modulate transistor current. First amplification “in pixel”. 14V Sensors – DEPFET Low noise operation possible at room temperature/ Physics performance (LCFI) Optimising the physics performance of the vertex detector. Here look again at CCD based system. Study impact parameter /


MEGATRON. Privately owned shares company founded at 1972. The company is engaged in manufacturing Measu- rement, Monitoring and Control equipment. Megatrons.

engaged in manufacturing Measu- rement, Monitoring and Control equipment. Megatrons technical engineering staff has consi- derable experience in manufacturing, installation and/Panel Meters Input : – Current /Voltage AC/ DC – PT100 Temperature sensor; – Resistance 3 wire. Output : 1 to 4 C/O Contact 220V//On /Off signal. Output current max: 10mA. MGDF / M1DO Protection units MEGATRON Voltage Deviation Detector Protecting Electronic Instruments. Enable 3 models: - Input voltage (power) is switched to output. -/


Introducing S7-300 RTD & Thermocouple Modules

/Cs S7-200 RTD Module - Background Information RTD - abbreviation for Resistance Temperature Detector. It is a sensor which operates on the principle that the resistance increases with an increase in temperature at a specific rate. Commonly manufactured using a platinum resistance element. More accurate and more linear than most thermocouples. RTD sensors are designed to take the temperature of liquids, semisolid materials and for insertion into holes or/


PACS IHDR 12/13 Nov 2003 Photoconductor Detector Modules 1 IHDR ASTEQ-GmbH Germany Peter Dinges, Michael Harr, Heribert Krüger, Hilmar Richter, Bernd Zimmermann.

etc.) during cool-down. - After cool-down: slit = 0 - 50 um. Static tests at LN 2 temperatures: Design withstands forces corresponding up to accelerations of 110 g. Above support post design passed cryo cycling and vibration tests / Photoconductor Detector Modules 14 Summary Interfaces to MPE housing, KT board and IMEC FEE and harness substrate defined Module design finished (specifications fulfilled) but: Pending problem of Contact resistance (?) between stainless steel wire and H20E glue Manufacturing of /


RUDHRANSH EXPORTS. Company Profile  We are manufacturer of High Quality Temperature Sensors like Thermocouple, RTDs, Thermo wells, Extension Cables &

and heavy duty enclosure. Applications of Thermocouple  Steel Industries  Heating Appliance Safety  Thermopile Radiation Sensors  Manufacturing  Radioisotope Thermoelectric generator  Process Plants Types of Thermocouple 1.) NT-ST-111  Ceramic Insulated wire in/151  Thermocouple probes for portable indicator  Widely used for surface temperature  Fabrication as per application Limits of Error for Thermocouple “RESISTANCE TEMPERATURE DETECTOR”  These are the most precise type of Sensors in the range/


Radiation Detectors Khayrudinov Vladislav Ismail Belmostefa XX00AA41-2004 Sensor Technology Helsinki Metropolia University of Applied Sciences 2014.

Content of the presentation History of silicon radiation detectors Strip silicon radiation detectors Materials and manufacturing technologies Silicon radiation detectors characteristics Interface electronic circuits History of silicon radiation detectors Before 1982: Lithium-drifted Low working temperature (77k=-196ºC) Impossible at room temperature Instable surfaces After 1982: Planar technology Strip silicon radiation detectors Room working temperature Lower noise and capacitance Strip silicon radiation/


RPC Production status for Engineering Module & Detector stack at IICHEP, Madurai Shri. S.D.Kalmani TIFR.

Module & Detector stack at IICHEP, Madurai Shri. S.D.Kalmani TIFR Part A Manufacturing Process at Saint Gobain at Sriperumbudur,Chennai RPC- “Glass Gap” – 400 number a)HV groove etching process b)Screen Printing : Surface resistance about 1 to 5 Mega Ohm c)Surface resistance measurements (plots/printing has been done using Korean ink DC20 and DC1000 in proportion of 1:5.5. 2. IR drying temperature 110 degrees. 3. Surface resistance in range of 1M to 5 M ohm with 25 cm x 25 cm jig and with grid of /


Temperature Sensors & Measurement E80 Spring 2014.

1/T 0 )] –R T is the thermistor resistance (Ω). –T is the thermistor temperature (K) –Manufacturers will often give you R 0, T 0 and an average value for β β is a curve fitting parameter and itself is temperature dependent. Simple Exponential Thermistor Model Usually T 0 is /the quantisation error regardless the accuracy of the sensor i.e., Temp = T +/- 0.8 o C Part IV Silicon Detectors Integrated form -40°C to +150°C Limited accuracy +/- 2 degree Linear response ( no calibration is required) Direct /


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