1. 1 Advanced designs of avalanche micro-pixel photodiodes (MAPD) from Zecotek Photonics Ziraddin (Zair) Sadygov On behalf of “MAPD collaboration” (JINR - INR RAS – IP AZ – Zecotek Photonics Inc. ) E-mail: ZSadygov@zecotek.com ; sadygov@cv.jinr.ru Internet site: http://www.zecotek.com

2. 2 Outline 1. Short view: from conventional APDs to MAPDs. 2. Three main types of MAPDs and their possibilities. 3. Collaboration with Zecotek Photonics Inc. 4. Novel MAPDs from Zecotek are coming. 5. Some test results Zecotek MAPDs. 6. Development of MAPD arrays. 7. Future plans.

3. 3 The way to micro-pixel APDs was not easy. Different generations of silicon avalanche structures produced since 1983. MOS and MRS type APDs. 1983-1993. Two types of MAPDs 1994-2001. MAPD-3: u-well APDs. 2002- present For more info: http://sunhe.jinr.ru/struct/neeo/apd/

4. 4 MAPD with individual surface resistors. MAPD-1. ( Some people call this version as MPPC, G-APD, Si-PM) Advantages: high signal gain (~10 6 ); very good single photo electron resolution. Problems: Low geometrical transparency (max. ~ 50%); Limited pixel density (max.~1000 pixel/sq.mm); First publication: Z. Sadygov. “Avalanche detector”.- Russian patent # 2102820, application from 10.10.1996.

5. 5 AMPD with indiv. surface drift channels. MAPD-2 Advantages: Standard CMOS technology and high yield of working samples. High signal gain and very good single photoelectron resolution. Problems: Relatively low geometrical transparency (`max ~55-60%). Limited pixel density (max.~ 1000 - 1500 pixel/sq.mm). Publication: Z. Sadygov. “Avalanche photo detector”.- Russian patent # 2086047, application from 05/30/1996.

6. 6 MAPD with deep micro-wells. MAPD-3. This version of MAPDs demonstrates unique parameters: Geometrical transparency/active area ---------- 100%; Quantum efficiency ---------------------------------- 80%; Max. gain (today)--------------------------------------- 70 000 Equivalent density of pixels --------------- up to 40 000 per mm sq. Excess noise factor ---------------------------------- 1

7. 7 The MAPD-3 is the best version First publication: Patent # 2316846. Date for property rights: 01.06.2006. Inventor: Sadygov Ziraddin Jagub-ogly (RU) Proprietors: Sadygov Ziraddin Jagub-ogly (RU), Zekotek Medical Sistems Singapure Pte.Ltd (SG)

8. 8 Agreement with Zecotek on joint development of MAPDs, February, 2007, Singapore.

9. 9 Zecotek team in Singapore

10. 10 International “MAPD-collaboration” Coordinator- Ziraddin (Zair) Sadygov Members of collaboration: 1. JINR (Dubna, Russia), 2. INR RAS (Moscow, Russia), 3. IP NASA (Baku, Azerbaijan), 4. “Zecotek Photonics” Company (Singapore, Malaysia) 5. “Dubna-Detectors” Company (Dubna, Russia) ________________________ E-mail: ZSadygov@zecotek.com http://www.zecotek.com

11. 11 Collaboration Protocol

12. 12

13. 13 MAPD technology came to MIMOS factory (Malaysia), April-May, 2007.

14. 14 MAPD-3 devices on 8 inch wafer (sensitive area – 3mm*3mm)

15. 15 Diced 8 inch devices wafers

16. 16 Assembling of MAPD-3 devices (sensitive area – 3mm*3mm) 8x8 MAPD arraysSingle element MAPDs

17. 17 Zecotek’s MAPD-team in Malacca (Malaysia)

18. 18 Some test results with Zecotek MAPD-3 design

19. 19 Photon detection efficiency Zecotek MAPDs vs. wavelength (measured by Y.Musienko, CERN, INR RAS)

20. 20 Optimal resolution of the MAPD-3N (It was measured in JINR using LED)

21. 21 Gain-voltage dependence of the MAPD-3N device (measured in JINR, Dubna)

22. 22 Sensitive area ------------------ 3mm*3mm; Pixel density -------------------- 15 000 per mm^2; Max. PDE in 450-550nm ----- ~30%; Optimal gain -------------------- 70 000; Working voltage ---------------- 88-90V. Dark noise at 20 0C --------- ~0.4 MHz/mm^2 Main parameters of Zecotek’s MAPD-3N design

23. 23 Future plan of work on MAPD-3N design - Decrease dark count up to 200 kHz/mm; - Increase of PDE up to 40%; - Develop small area (1x1 and 2x2 mm) devices for fiber readout and small PET scanners; - Develop one and two-dimensional arrays for imaging