1. THE PHYSICS OF FERROELECTRIC MEMORIES Electro-ceramic Lab. Dept. of Materials Engineering

2. Crystal structure of ferroelectric materials Electro-ceramic Lab. Typical perovskite ABO 3 structure Coner : A atoms Body center : B atoms Face center : O atoms

3. Unit cells of two ferroelectric crystals Electro-ceramic Lab. a) The cubic perovskite Pb(Zr x Ti 1-x )O 3 shows polarization up (i) or down(ii) corresponding to, say, logic state “1” or “ 0” b) The layer of bismuth oxide helps to control the degradation of the polarization

4. TYPICAL HYSTERESIS LOOP Electro-ceramic Lab.

5. DRAMS based on materials with high permitivity Electro-ceramic Lab.

6. Schematic diagram of two kinds of nonvolatile ferroelectric random access memory(NVFRAM) Electro-ceramic Lab. The high density architecture (top) is designed for use as Computer memory. The low density architecture (bottom) is for smart cards and other applications of embedded memories, such as microprocessor controllers. Both archtectures are examples Of 1T-1C design.

7. Polarization hysteresis loops Electro-ceramic Lab. Polarization hysteresis loops for four single-crystal PZT films with different ratios of zirconium to titanium grown on SrRuO 3 electrode layers. Single-crystal ferroelectric films can Exhibit properties similar to those of bulk films.

8. Other applications of ferroelectric materials Electro-ceramic Lab.

9. Other application of ferroelectric materials Electro-ceramic Lab.