1. SU-8 Testing (v1b) Thin SU8 on glass slide Test Soft Bake (SB) and Post Exposure Bake (PEB)

2. “Control” Recipe Spin Coating: 10s @ 500rpm; 30s @ 2000rpm – (expected thickness?) Soft Bake (SB): 60s @ 93°C Exposure: 8s @ 275 W PEB: 60s @ 93°C Develop: 4min in SU8 developer SU8 developer rinse IPA rinse/Nitrogen Dry

3. 1 st Set of Tests 4 samples; 8 devices/sample 4 Wells (W)+4 Blanks (B)/sample S1: “Control”: Misaligned (how?); All shorted; R(W) ~8.6Ω; R(B)~10Ω Test Parameters: SB (RT Evap for 30min) and Vary PEB time @ 60°C? S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = ?pF S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=? ±? S4: 15min PEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±? Cracking patterns seen in S2, S3, S4

4. 2 nd set of test samples Summary 4 samples 2 “Controls” Test Parameters: 1 min PEB @ 93°C and Vary SB time @ 60°C SB: 2.5 min SB: 5 min

5. 2 nd Test Results “Control 1” S5 DeviceCapacitance(p F) Resistance(Ω)Type 129.4B 20.5W 39.383.7x10^6B 424W 524B 67W 7 421B 817W Summary: W: 4/4 Shorted B: 3/4 Shorted R(Well): (12.1 ± 10) Ω Excluding #3 R(Blank): (158± 230) Ω Blank Capacitance: 9.38 pF

6. “Control 2” S6 DeviceCapacitance(p F) Resistance(Ω)Type 1 Damaged (Too High Voltage) 9.74.6x10^6W 29.338.3x10^6B 3 Damaged (Too High Voltage) 9.613.04x10^5W 49.41.05x10^7B 5142W 69.251.1x10^7B 746W 810.312000B Summary: W: 2/4 Shorted (2 Damaged by applying too high a voltage) B: 0/4 Shorted R(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF

7. 2.5min SB S7 DeviceCapacitance(p F) Resistance(Ω)Type 113.4W 2428B 310.8W 4294B 53.7W 65.7B 74.1W 811.6B Summary: All Shorted R(Blank): 184.8± 211Ω R(Well): 8± 4.9Ω

8. 5min SB S8 DeviceCapacitance(p F) Resistance(Ω)Type 14.8W 216B 31.9W 444B 54.3W 6 Error?-B 7*15.161.76W 815.250.57x10^6B Summary: W: 3/4 Shorted (why not 4/4?) B: 3/4 Shorted R(Blank): (30± 20)Ω (#8 excluded) R(Well): (3.7± 1.6) Ω 7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high

9. “Control 2” 20x

10. “Control 2” 100x

11. “Control1” 100x

12. 2.5min SB 100x

13. 5min SB 100x

14. S9 Back Contact Broken no Resistances Measured Capacitances W: 2/4 Shorted B: 1/4 Shorted Avg Capacitance Well: 19.3 ± 0.6pF DeviceCapacitance(p F) Resistance(Ω)Type 1W 2 B 312W 419B 5W 619B 7 W 820B

15. S10 DeviceCapacitance(p F) Resistance(Ω)Type 14.5W 218B 36.7W 4121B 53.9W 6127B 75W 8 118B Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Well Resistance: 5.0± 1.2Ω Avg Blank Resistance: 96± 52Ω Double Exposed (16s)