1. W. Eckstein, MPIPP Garching, Germany
Data from IPP Garching
W. Eckstein, MPIPP Garching, Germany

2. Book: Sputtering by Particle Bombardment Editors: R. Behrisch, W
Book: Sputtering by Particle Bombardment Editors: R. Behrisch, W. Eckstein
Introduction and Overview (Behrisch, Eckstein)
Computer Simulation of the Sputtering Process (Eckstein, Urbassek)
Sputtering Yields (Eckstein)
Results of Molecular Dynamics Simulations (Urbassek)
Energy and Angular Distributions of Sputtered Species (Gnaser)
Chemical Sputtering (Jacob, Roth)
Electronic Sputtering with Swift Heavy Ions (Assmann, Toulemonde, Trautmann)

3. 1. Comparison of experimental and calculated values for the sputtering yield (new book)
2. New calculated values and fit formula for the reflection coefficients

4. Data fitting Fitting of calculated yield values for normal
incidence of crystalline (amorphous)
elemental targets
values calculated with ACAT (Yamamura)
Values calculated with TRIM.SP (Eckstein)

6. Advantage of the new fit
The new fit formula of the sputtering yield
at normal incidence allows a better
description at low energies near the
threshold
The new fit gives more realistic threshold
energies

7. Dependence on the interaction potential

8. Influence of inelastic energy loss

10. Calculated energy dependencies
376 ion – target combinations
Fitting parameters given in tables
266 comparisons with experimental data
Examples

14. Calculated energy dependencies of the sputtering yield at normal incidence (1)

15. Calculated energy dependencies of the sputtering yield at normal incidence (2)

16. Calculated energy dependencies of the sputtering yield at normal incidence (3)

17. Calculated angular dependencies
Fitting of calculated yield values for the
angular dependence at a fixed incident
energy for elemental targets
Values calculated with TRIM.SP
A new fit formula for the angular dependence of the sputtering yield at a fixed energy allows a
better description for low mass ratios and at low energies

19. Calculated angular dependencies
fitting parameters given in tables
117 comparisons with experimental data
examples

20. Angular dependence of the yield

23. Calculated angular dependencies of the sputtering yield at specific energies

24. Main reasons for deviations
Experiment: surface roughness (up to a
(factor of 5 for oblique incidence)
implantation of gaseous species
(up to 30%)
Adsorption of surface impurities
Calculations: interaction potential
inelastic energy loss

25. Multicomponent targets
Compounds, alloys, isotopic mixtures
Bombardment with nonvolatile species
Fluence dependent yields
(yield oscillations)

26. Oscillations in the partial yield

27. Other yield effects Temperature dependence
(yields below threshold, magnetic state)
Yield fluctuations (ASI distributions)
Time evolution of the yield