1. Characterization of Mechanical Properties of Thin Film Using Residual Compressive Stress 2004. 2. 16. Sung-Jin Cho, Jin-Won Chung, Myoung-Woon Moon and Kwang-Ryeol Lee Korea Institute of Science and Technology 미세구조 Workshop, 강원도 평창군 피닉스파크

2. Residual Stress of Thin Films Thin films typically support very high stresses due to the constraint of the substrate to which they are attached

3. Residual Compressive Stress of DLC Film Film Deposition

4. Telephone Cord Buckling M.W.Moon et al, Acta Mater., 50 (2002) 1219.

5. Off-Piste Run in Hoghfügen

6. Buckling Configurations

7. Quantitative Analysis K.-R. Lee et al, Diam. Rel. Mater., 2 (1993) 218.

8. What can we do with this phenomenon? Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films

9. What can we do with this phenomenon? For Isotropic Thin Films

10. Measurement of Residual Stress Curvature (R) Ds DfDf

11. What can we do with this phenomenon? For Isotropic Thin Films

12. DLC Bridges by Micro Fabrication DLC film Deposition ( on SiO 2 ) DLC Patterning SiO 2 Isotropic Wet Etching Wet Cleaning Strain Estimation

13. C 6 H 6, 10mTorr, -400V, 0.5  m 150  m Microstructure of DLC Bridges

14. Strain of the Buckled Thin Films Z X 2A 0

15. Effect of Bridge Length  m

16. Dependence of Film Thickness

17.  V  V  V  V DLC Bridges

18. Biaxial Elastic Modulus

19. DLC film Deposition Cleavage along [011] Direction Si Etching (by KOH Solution) Wet Cleaning Strain Measurement Preparation of Free Overhang

20. Free Overhang Method Biaxial elastic modulus Strain of the free overhang

21. A 0 / λof Free-hang at 546 nm I II III a-C:H, C 6 H 6 -400V

22. 5.6 ㎛ 11.3 ㎛ 2 ㎛ 11 ㎛ Effect of Etching Depth 546 nm 55 nm

23. Elastic Modulus for Various Ion Energies Nanoindentation t>1.0 ㎛

24. Advantages of This Method Simple Method Completely Exclude the Substrate Effect Can Be Used for Very Thin Films

25. Nano-indentation Substrate Effect is Significant. The elastic strain field >> the plastic strain field Substrate

26. Substrate Effect on the Measurement

27. Advantages of This Method Simple Method Completely Exclude the Substrate Effect Can Be Used for Very Thin Films

28. a-C:H, C 6 H 6 -400V J.-W. Chung et al, Diam.Rel. Mater. 10 (2001) 2069. ta-C (Ground) Elastic Modulus of Very Thin Films

29. Biaxial Elastic Modulus 20 233 166 100

30. 233 166 100 20 Structural Evolution of DLC Films Si Substrate J.-W. Chung et al, Diam.Rel. Mater., 11, 1441 (2002).

31. Residual Stress of ta-C film

32. Biaxial Elastic Modulus of ta-C film

33. Conclusions Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films

34. What can we do with this phenomenon? Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films

35. Fundamental Adhesion

36. Fundamental Adhesion DLC on Glass

37. Conclusions Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films