1. 班 級：碩研電子二甲 姓 名：江宥辰 學 號： M9730208 授課教師：蔣富成

2.  1. Crystalline Quality  2. Current Spreading Effect  3. Discussion  4. Reference

4. 4.1x10 18 cm -3 Grown at 1168  C Grown at 500°C LT GaN grown time 130s LT Si:N grown time 350s 9 period grown at 835°C & In 0.3 Ga 0.7 N = 3.0 nm GaN= 13 nm Grown at 1020°C 3.8x10 17 cm -3 The process called ： ”Interrupt Growth Procedure” Key Word ： Interlayer, Dislocation Blocking Layer SiNx

5. Dislocation density 1.1x10 8 cm -2 Dislocation density 1.4x10 7 cm -2 TD density reduction was due to the nitride film deposition, which may decrease the density of surface micro pits and release stress between the n-GaN film and the sapphire substrate.

6. 5

9. Grown at 560 ° C 3 period In 0.3 Ga 0.7 N = 2.5 nm GaN= 6.5 nm Electron Blocking Layer First Barrier 2x10 17 cm -3 Current Spreading Layer Electron Emission Layer

10. 3.6V3.3V Slope=Rs Rs LED1 >Rs LED2

11. 1.25 mW 2.6 mW

12. Electron capture rate increase Relaxation induced defect generation & non-radiative recombination Hint : A large quantum well width can provide with a large electron capture rate, but the carrier confinement effect will decrease as the well width increase.

14.  1. Interlayer 是否會成為新趨勢。  2. InGaN Current Spreading Layer 具有類似 Buffer 作用， 可以減少 Dislocation 。  3. Silicon doped MQW 可以包含 Current Spreading Effect 與 Hole Blocking Layer ( 須搭配調變 In 和 Ga 元素 比例 ) 兩種作用。  4. (A). 良好的電流分佈 (B). 高品質的結晶 (C). 低電流阻 塞可以提升抗靜電能力。

15.  1. Hon KUAN, “High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes, ” Japanese Journal of Applied Physics Vol. 47, No. 3, 2008, pp. 1544–1546.  2. J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced Multiquantum-Well Light-Emitting Diode Output Power in an InGaN–GaN With an InGaN Current-Spreading Layer, ” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 13, NO. 11, NOVEMBER 2001.  3. T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu, and J. F. Chen, “InGaN/GaN Tunnel-Injection Blue Light-Emitting Diodes, ” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 6, JUNE 2002.  4. Yun-Li Li, Wei-Chih Lai and Yun-Chorng Chang, “Excess carrier dynamics of InGaN/GaN multiple-quantum-well light-emitting diodes with various silicon barrier doping profiles, ” APPLIED PHYSICS LETTERS 92, 152109 2008.  5. Eun-Hyun Park, David Nicol Hun Kang, Ian T. Ferguson, Soo-Kun Jeon, Joong-Seo Park and Tae- Kyung Yoo, “The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode, ” APPLIED PHYSICS LETTERS 90, 031102 2006.  6. I. Akasaki et al. J. Crystal Growth 98, 209 (1989).  7. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, Senior Member, IEEE, J. F. Chen, Member, IEEE, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN– GaN Multiple Quantum-Well Blue Light Emitting Diodes, ” IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 5, MAY 2002.