1. Electrical characteristics of un-irradiated ATLAS07 mini strip sensors A.Chilingarov, Lancaster University ATLAS Tracker Upgrade UK Workshop Coseners House, 8.07.08

2. A.Chilingarov, ATLAS07 mini sensors 2 Outline 1.Sensors 2.C-V,  I-V measurements 3.Punch-through voltages 4.Interstrip resistance 5.Interstrip capacitance 6.Summary 7.Conclusions

3. A.Chilingarov, ATLAS07 mini sensors 3 Available versions (“Zones”) of the ATLAS07 mini-SSDs. Here we report the results for zone 1 (no isolation structure) and for zone 3 (baseline option) sensors. Each zone may additionally have a thin lightly p-doped layer on the surface (“p-spray”). PTP means Punch-Through Protection structure.

4. A.Chilingarov, ATLAS07 mini sensors 4 ..... RbRb Bias rail Backplane A CsCs RsRs to LCR meter CV – IV measurements Both C-V and I-V measurements are made simultaneously. The impedance is measured between the backplane and the bias rail by the LCR meter in C s -R s mode (standard frequency is 10kHz). The C s represents the total capacitance between the strips and the backplane, while the R s is the average bias resistor divided by the number of strips.

5. A.Chilingarov, ATLAS07 mini sensors 5 Five out of 7 sensors can withstand 1000V bias, two develop a breakdown above 800V. Typical current is below 10 nA (for ~1cm 2 area). Depletion voltage values lie between 150 and 180V. Resistance agrees with expectation within a factor of ~1.5

6. A.Chilingarov, ATLAS07 mini sensors 6 A  RbRb R str R dyn Punch-through resistance measurements Negative DC potential, U, varying from 0.5 to 50 V is applied to a strip implant and the resulting current, I, is measured. The slope dU/dI gives the value of effective resistance, R eff, between the strip and the bias rail. R eff represents the bias resistor, R b, with R dyn + R str in parallel. Here R dyn is the dynamic resistance of the punch-through gap quickly decreasing with U above the break-through voltage and the R str is the strip implant resistance (if the punch-through gap is at the strip end opposite to the contact point).

7. A.Chilingarov, ATLAS07 mini sensors 7 As expected, zone 1 sensors have a relatively low break-through voltage of ~5 or ~15V. For zone 3 sensors the break- through is also observed above 45 V. For all sensors this voltage decreases with time under bias. Note that the strip bias resistors can tolerate up to ~50V voltage drop across them without being burnt.

8. A.Chilingarov, ATLAS07 mini sensors 8 Interstrip resistance measurements A “master” DC potential U 0 is applied to a strip implant and the “slave” potential U 1 induced at the neighbouring strip implant is measured by a high impedance voltmeter. The U 0 is varied by a few volts around zero and the resulting current I 0 is measured. The slope dU 0 /dI 0 gives the value of effective resistance between the strip and the bias rail, R 0. The slope dU 1 /dU 0 allows calculation of the effective interstrip resistance, R is, using an assumption of bias resistor, R b, being the same at both strips.  RbRb Bias rail A V R is U1U1 UoUo IoIo

9. A.Chilingarov, ATLAS07 mini sensors 9 Typical dependence of the induced voltage (U slave ) vs. the voltage applied to the neighbouring strip (U master ). Normally the slope dU 1 /dU 0 is ~1  V/V which means R is ~ 10 6 R bias i.e. ~1000 GOhm. The spread of the points around the linear fit determines the R is error.

10. A.Chilingarov, ATLAS07 mini sensors 10 For zone 3 sensors the interstrip resistance R is does not depend on bias in the range 10-200V and doesn’t change after sensor remaining at 200V bias during 3 hours. Typical R is value is ~1000 GOhm.

11. A.Chilingarov, ATLAS07 mini sensors 11 For fresh zone 1 sensors with p- spray the R is also doesn’t depend on bias in the range 10-200V but after 3 hour biasing by 200V it decreases and becomes slightly bias dependent with R is value of ~500 GOhm above 100V bias. For zone 1 sensors without p- spray the R is behaviour is more complicated. Nevertheless above 100V bias the R is remains above 100 GOhm even after 3 hours at 200V bias.

12. A.Chilingarov, ATLAS07 mini sensors 12 to LCR meter Interstrip capacitance measurements The capacitance is measured between an aluminium outer strip and two its nearest neighbours connected together. The LCR meter operates in C p -D mode. Standard measurement frequency is 100 kHz. The strips are grounded through ~1 M  resistors to keep their DC potential fixed.

13. A.Chilingarov, ATLAS07 mini sensors 13 Below 300V the C is has a complicated behaviour with bias but above 300V it almost flattens and gradually converges to a value of ~0.6 pF for all sensor types. Our results are in a reasonable agreement with KEK measurements. Interstrip capacitance C is vs. U bias

14. A.Chilingarov, ATLAS07 mini sensors 14 Interstrip capacitance C is vs. time at U bias = 600V At 600V bias the C is further converges with time to a common value of ~0.61 pF for all sensor types. The measurements were made at ~22 o C temperature and 35- 45% relative humidity.

15. A.Chilingarov, ATLAS07 mini sensors 15 The strip length, L, is 8000  m for zone 3 sensors and 8060  m for zone 1 sensors. Assuming the whole measured capacitance being scalable with L the capacitance per unit length was calculated. No systematic difference due to the sensor type or the p-spray presence was observed. The average C is value is 0.758+-.003 pF/cm where the error is the points r.m.s. spread.

16. A.Chilingarov, ATLAS07 mini sensors 16 Comparison with the SCT sensors The observed C is /L agrees well with the data measured for the SCT sensors. An absolute LCR meter uncertainty of 0.01 pF is also shown in the error. Thus the C is in ATLAS07 minis can be regarded as simply geometrical one.

17. A.Chilingarov, ATLAS07 mini sensors 17 Frequency dependence of the C is For the frequencies above 100kHz the C is for the mini SSDs is by ~10% higher. However for the SCT sensors there is <1% difference between the C is values in the range from 100kHz to 1MHz. Measurements with longer strips are necessary to distinguish between the changes with frequency due to the whole strip (scalable with L) and to the strip edges (independent of L).

18. A.Chilingarov, ATLAS07 mini sensors 18 Sensor namep-spray Breakdown onset, V I,  A at 1000V I,  A at brkd.onsetVdep,V Rbias, MOhm Interstrip R, GOhm p-through onset, V Interstrip C, pF Zone 1 - PTP*, no p-stops(in fresh sensors) w02-BZ1-P19Yes>10000.0084 1741.22442150.608 w04-BZ1-P7Yes>10000.0317 1741.32535150.613 w27-BZ1-P7No>10000.0068 1531.306045.50.614 w28-BZ1-P19No>10000.0061 1591.252804.50.610 Zone 3 - no PTP, p-stops w23-BZ3-P21No>10000.0071 1671.2189047.50.607 w04-BZ3-P3Yes81020.10.00781831.2385348.50.606 w07-BZ3-P3Yes83018.40.00781821.19100848.50.608 * PTP – Punch-Through Protection structure Summary of the results presented in this talk Note: the interstrip resistance values are given at 200V bias and after 3 hours where appropriate.

19. A.Chilingarov, ATLAS07 mini sensors 19 Conclusions 1.Typically ATLAS mini SSDs show a stable behaviour up to at least 800 V. More than a half of them can be operated up to 1000V bias. The depletion voltage values are below 200V. 2.The punch-through protection structure implemented in zone 1 sensors operates according to expectations with a break-through voltage below 15 V. 3.For all sensor types the interstrip resistance exceeds 100 GOhm for bias voltage above 100V. 4.The interstrip capacitance values for all sensor types are very similar and agree with those for ATLAS SCT sensors scaled by the length. 5.The bias resistors have the value in the range 1.2 - 1.3 MOhm. They are able to withstand up to ~50V voltage drop across them without thermal destruction.