1. New Product Introduction (NPI) DirectFET ™ ‒ New Corner Gate StrongIRFET™ Kevin Ream, DCDC PMD July 2015

2. New Corner Gate DirectFET ™ Great new design for even lower Package Resistance Unmatched device current rating >150 A in Medium Can Significantly larger source solder area than existing Medium Can DirectFET ™ footprints Page 210 February 2015Copyright © Infineon Technologies AG 2014. All rights reserved. MN Footprint ME Footprint R THJ-PCB = ~ 1.0 ⁰ C/W R THJ-PCB = 0.75 ⁰ C/W SS G S S SS SG

3. ME-Type DirectFET ™ vs PQFN ME-Type DirectFET ™ has four times larger source contact area than a typical 5x6 PQFN package Much higher current density and higher reliability Ideal for high performance Power tools and RoHS 6 compliant equipment Page 310 February 2015Copyright © Infineon Technologies AG 2014. All rights reserved. ME DirectFET ™ : 3.7mm 2 source contact area: 5x6 PQFN: < 1mm 2 source contact area S S S S SG SSS G

4. New Corner Gate Pad for Scalable Designs Page 4May 2015Copyright © Infineon Technologies AG 2015. All rights reserved. Single pad layout accommodates multiple footprints Optimized R DS(on) for lowest possible losses IRF7483TRPBF ~60% Die Size Fits on same footprint IRF7480TRPBF 100% Die Size S S SS SG SS S G

5. DirectFET™ Portfolio – Medium Can, Corner Gate Page 5Copyright © Infineon Technologies AG 2014. All rights reserved.10 February 2015 ME MF Part NumberPackageOutline V DS (V) R DS(on) (mΩ) Typ/Max @ 10 V I D (A) Q G (nC) IRF7480MTRPBFMedium Can DirectFET ™ ME400.9 / 1.2217123 IRF7483MTRPBFMedium Can DirectFET ™ MF401.7 / 2.313581 IRF60DM206Medium Can DirectFET ™ ME602.2 / 2.9130133 IRF7580MTRPBFMedium Can DirectFET ™ ME602.9 / 3.6114120 IRF7780MTRPBFMedium Can DirectFET ™ ME754.5 / 5.789124

6. Part Numbers, Pricing and Documentation Links Page 62013-09-25Copyright © Infineon Technologies AG 2013. All rights reserved. Part NumbersSamples AvailableProductionPackageRegisterable(Y/N)MOQ Starting MSRP $ per piece RoHS (Y/N) IRF7480MTRPBF now DirectFET ™ ME Y 4800Y IRF7483MTRPBF now DirectFET ™ MF Y 48000.45 in qty of 10KY IRF60DM206 now DirectFET ™ ME Y 4800Y IRF7580MTRPBF now DirectFET ™ ME Y 4800Y IRF7780MTRPBF now DirectFET ™ ME Y 4800Y

7. StrongIRFET™ Corner Gate DirectFET ™ http://www.infineon.com/strongirfet For more information, please visit the product pages on the Infineon website. Support Page 7May 2015Copyright © Infineon Technologies AG 2015. All rights reserved.

8. Summary Page 8May 2015Copyright © Infineon Technologies AG 2015. All rights reserved. Key Features and Benefits: ―Ultra-low R DS(on) ―High current rating ―Rugged silicon ―Improved gate, avalanche and dynamic dv/dt ruggedness ―Lower thermal resistance to PCB ―High current density ―Scalability of designs ―RoHS 6 compliant Target Applications: