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Steven J. Hillenius Executive Vice President Semiconductor Research Corporation Industrial perspective for university research trends Trends in Simulation.

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Presentation on theme: "Steven J. Hillenius Executive Vice President Semiconductor Research Corporation Industrial perspective for university research trends Trends in Simulation."— Presentation transcript:

1 Steven J. Hillenius Executive Vice President Semiconductor Research Corporation Industrial perspective for university research trends Trends in Simulation at Nano-scale

2 Needs for semiconductor simulation  Managing complexity  Creating multilevel design tools  Determining the technology limits 2

3 Example: Electronic Cell Major functional blocks: Sensing Communication Control Energy Layout: 3D microcircuits ~10  m S4S4 S1S1 S2S2 Control Energy Communication S3S3 Constraints and Trade-offs: Very limited space needs to by divided between sensors power supply electronic components Scaling Limits need to be Understood Technology Convergence Extreme scaling needed

4 High Level needs for nano-scale devices Integrated multilevel perspective:  From molecule to mesoscale nanostructures to microscale thin films and components to circuit level simulations of integrated devices  From femto scale electronic transitions and nanoscale and microscale molecular dynamics through macroscopic properties and behavior. Complexity of materials modeling in nanotechnology is increasing, due to increasing complexity from a variety of factors, which include:  Combinatorial System: Number of materials has continued to increase with each technology.  Size: Most of the devices have dimensions close to material domain sizes (e.g. grain size, thin film thickness).  Topography: Non-planar material structures modulate properties and behavior, due to different materials at multiple interfaces.  Topology of the nanostructures and molecules. 4

5 5 Nanoscale simulation topics of importance to the Semiconductor Industry Process-related:  Interface of high-K dielectric on difference channel materials (III-V, CNT, graphene, Ge… as function of surface orientation, termination…)  Ultra-rapid thermal annealing (activation and diffusion in micro-s time frame)  Contact morphology  Strain in 3-D nanostructures  Defect formation due to strain  Process variability (line-width roughness, doping fluctuation, thermal fluctuation…)  Self-assembly  Synthesis to structure & composition, especially for the interfaces and multi-interface material structures.  Probe interactions with samples to enhance quantification of structure, composition, and critical properties.

6 6 Nanoscale simulation topics of importance to the Semiconductor Industry Device-related:  Band structures in various III-V compounds  Band structures in 3-D structures (FinFET, CNT, graphene nanoribbon…)  Ballistic transport  Dissipative quantum transport  Transport through contact  Strain-enhanced transport  Device output variability (due to process variability)  Reliability (High-K interface, hot-carrier, TDDB, NBTI, …)  Analog performance (1/f noise, RTN…)  Parasitics and cross-talk  Modeling of novel memories (MRAM, PCRAM, ferroelectric, nano- crystals…)

7 Circuit-related:  Compact modeling interface  Predictive modeling for design of complex SoCs on advanced processes.  Reliability simulation (NBTI, TDDB, HCI, RTN) that were not as evident in older processes..  Higher frequency design (GHz to THz)  Robust design elements 7 Nanoscale simulation topics of importance to the Semiconductor Industry


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