1. 240-451 VLSI, 2000 1 Lecture 1 A review of microelectronics and an introduction to MOS technology Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut

2. 240-451 VLSI, 2000 2 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Why VLSI? Introduction to integrated circuit technology - Affected by electronics engineering technology - Characterization of electronics at present-day  integration improved the design  reduces manufacturing cost

3. 240-451 VLSI, 2000 3 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut From design to market Circuit Design Layout Fabrication Packaging Test Packaging

4. 240-451 VLSI, 2000 4 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Integrated circuit (IC) era Moore’s law : number of transistors per chip doubles every year

5. 240-451 VLSI, 2000 5 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut IC technology scaling

6. 240-451 VLSI, 2000 6 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Metal-oxide-semiconductor MOS = Metal Oxide Semiconductor In the past : Metal gate over Oxide insulation Present-day : polycrystalline silicon that we call “Poly” We use metal (aluminum) for interconnection wires on the surface of the chip.

7. 240-451 VLSI, 2000 7 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI design process 1. Specification : Defined function, estimate cost Adder 2. Architecture : Large block Partition must be added in good design process if the circuit has complexity.

8. 240-451 VLSI, 2000 8 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI design process 3. Logic :we can divide into 3 steps - Describe the behavior of circuit (Input, Output and behavior C = A + B - Describe the structure of circuit R 1R 2R 3 Adder A B

9. 240-451 VLSI, 2000 9 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI design process - Detail design R 1R 2R 3 A B

10. 240-451 VLSI, 2000 10 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI design process 4. Circuit Transistor : Speed, power 5. Layout : Now we are in those 2 process (process 4 and 5 )

11. 240-451 VLSI, 2000 11 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Architectural Logic Circuit Behavioral Structural Physical device Today’s view Relation in design process

12. 240-451 VLSI, 2000 12 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Design Technology

13. 240-451 VLSI, 2000 13 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI Technology 1. Schottky TTL (Transistor-transistor logic)

14. 240-451 VLSI, 2000 14 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI Technology 2. ECL (Emitter coupled logic) NOR

15. 240-451 VLSI, 2000 15 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut 3. MOS (Metal Oxide semiconductor) VLSI Technology NOR

16. 240-451 VLSI, 2000 16 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut VLSI Technology 4. CMOS (Complementary MOS)

17. 240-451 VLSI, 2000 17 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Transistor Structure

18. 240-451 VLSI, 2000 18 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Manufacturing Steps

19. 240-451 VLSI, 2000 19 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Photolithography Diffusion = High temperature Ion implementation = High velocity

20. 240-451 VLSI, 2000 20 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Process Steps p-tubn-tub substrate Doped substrate for n-type, p-type transistor

21. 240-451 VLSI, 2000 21 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Process Steps (con’t) Pattern polysilicon before diffusion regions: p-tubn-tub poly gate oxide

22. 240-451 VLSI, 2000 22 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Process Steps (con’t) p-tubn-tub poly n+ p+ Add diffusions, performing self-masking:

23. 240-451 VLSI, 2000 23 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Process Steps (con’t) p-tubn-tub poly n+ p+ metal 1 vias Start adding metal layers:

24. 240-451 VLSI, 2000 24 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut NMOS Process

25. 240-451 VLSI, 2000 25 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Transistor Layout n-type (tubs may vary): w L

26. 240-451 VLSI, 2000 26 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut N-well CMOS Process

27. 240-451 VLSI, 2000 27 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut N-well CMOS Process (con’t)

28. 240-451 VLSI, 2000 28 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut CMOS Transistor layout

29. 240-451 VLSI, 2000 29 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut MOS Symbol nMOSnMOS pMOS enhancement depletion enhancement

30. 240-451 VLSI, 2000 30 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Discussion and Question