1. Observing the effects of changing tox to the gain of a simple amplifier By R. E. Evans

2. tox Process parameter Thickness of the gate oxide Cox = εox/tox -> As tox increases, Cox decreases Cox affects ß, gate capacitance

3. Why vary tox? Because fabrication process is not perfect Variation in tox will vary from wafer to wafer and slight variation on the same platter This experiment varies tox beyond tolerances to make the results look good, but the same experiment can be done with actual variations from a given process and foundry which usually go between 0.1nm to 1nm

4. My experiment Make a schematic of a simple amplifier Alter the sized pair model to allow for variation of tox Use previous test circuits to find gm, gds Find an equation for gain in terms of tox Show theoretical versus simulated

5. Simple amplifier circuit

6. Simulation parameters Changed TOX to TOX = {tox + 1.41E-8} Will vary tox from -7nm to 49 nm in 7nm steps Sweep Vin from 0 to 2 volts, Ix = 100 uA

7. Results Gain = -gm1/(gds1+gds2) gm is in terms of beta, which is dependent on Cox, which is dependent on tox Use our level-1 approximation for gm1, gds1, gds2 gds1 = I+Ino/Va gds2=I+Ipo/Va gm1=SQRT(2*eox/tox*uo*W/L*(I+I1))

8. Results - Gain

9. Results – Max Gain vs. Tox

10. Results – Max Gain vs. Tox from -1nm to +1nm

11. Results – gds1, gds2, gm1 From previous exercises: gds1 = 3.68 V, gds2 = 6.4 V gm1 = SQRT(B*(100+45)) Theoretical gain = -SQRT(2*0.6*B*(100+45))/(3.68+6.4)

12. Curve Fit Difference between my theoretical values and simulated values were off by a small factor Added a shift element to the equation New Theoretical gain = -SQRT(2*0.6*B*(100+45))/(3.68+6.4)*-12

13. Results - Curve

14. Conclusion Saw the overall effect of changing tox, did get my expected results: which means I had a good equations and tox vs. gain can be modeled in level-1 terms Reported tolerances in tox can shift the peak gain by 6 which needs to be at least noted when designing analog IC’s