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XIS Calibration on the Ground Status Report K. Hayashida (Osaka University) and the XIS-team.

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Presentation on theme: "XIS Calibration on the Ground Status Report K. Hayashida (Osaka University) and the XIS-team."— Presentation transcript:

1 XIS Calibration on the Ground Status Report K. Hayashida (Osaka University) and the XIS-team

2 XIS Components XIS-Sensors XIS-Sensors CCID41-FI CCD CCID41-FI CCD EU (Engineering Unit) EU (Engineering Unit) FM FI0,FI1,FI2,FI3 FM FI0,FI1,FI2,FI3 CCID41-BI CCDCCID41-BI CCD FM BI0,BI1FM BI0,BI1 AE/TCE AE/TCE FM AE/TCE01,23 FM AE/TCE01,23 EM AE/TCE EM AE/TCE DE DE FM 4PPU+MPU FM 4PPU+MPU FM Spare before Launch

3 Calibration Task Share ComponentsLocation X-ray Source QE reference Chip level CSR/MIT Fluorescent X-rays (C,O,F,Al,Si,P,Ti,Mn,Cu) ACIS chips calibrated at BESSY Camera without OBF +FM AE Osaka Grating Spectrometer 0.2-2.2keV Polypro-window Gas PC & XIS- EU Kyoto Fluorescent X-rays (Al,Cl,Ti,Mn,Fe,Zn,Se) Window-less SSD OBF Synchrotron Facility Synchrotron X-rays + monochrometer (Transmission measurement with PIN diode) Camera onboard the satellite ISAS/JAXA55Fe

4 XIS Data Reduction Frame Data /8sec Frame Data /8sec Dark-level Subtraction Dark-level Subtraction Event Pickup (PH(E)>Event Threshold) Event Pickup (PH(E)>Event Threshold) 5x5 mode, 3x3 mode or 2x2 mode 5x5 mode, 3x3 mode or 2x2 mode Event data Event data Charge Trail Correction Charge Trail Correction Grading / PHA-reproduction for PH(i)>Split Threshold Grading / PHA-reproduction for PH(i)>Split Threshold PHA-dependent Split Threshold for BI PHA-dependent Split Threshold for BI Bad Columns Filter Bad Columns Filter Spectrum / Image / Light Curve Spectrum / Image / Light Curve Onboard DE On the ground XIS Response depends on the reduction procedure * :Newly introduced

5 Event Grades Grades 02346 are used as X-ray events. Grades 02346 are used as X-ray events. grade0 grade1 grade2 grade3 grade4 grade5 grade6 grade7 Pixel level is maximum among 3x3 area and larger than Event threshold Pixel level is larger than Split threshold and added to the PHA Pixel level is larger than Split threshold but NOT added to the PHA

6 PH(2),PH(7) distribution PH(2) = preceding pixel ,PH(7) =trailing pixel PH [ADU] Near readout node Far from readout node BI1 5.9keV X-ray incidence RAWY d c b a a b cd

7 Amount of Charge in the Trail BI1 PH(7)Center [ADU] CTI = (4.5±0.3)×10 [ /Transfer ] -6 Slope ↓ CTI estimated from this trailing charge Mn K Number of V-Transfer in the Imaging Area *) temperature dependence was observed

8 Incident X-ray Energy Dependence VCTI= (1.72 ・ 10 )×E - 0.5 -4-4 HCTI= (6.06 ・ 10 )×E - 0.5 -4-4 We can tell the amount of charge deposited in PH(7) and PH(5) => Charge Trail Correction V-transfer H-transfer

9 PH(2),PH(7) Distribution before/after Charge Trail Correction PH(2),PH(7) Distribution before/after Charge Trail Correction PH [ADU]

10 Effects of Charge Trail Correction Correct Grade Branching Ratio and PH() Correct Grade Branching Ratio and PH() Reduce Grade7 events due to Charge Trail. 10%-20% increase in Grade02346 ratio at high energies. Reduce Grade7 events due to Charge Trail. 10%-20% increase in Grade02346 ratio at high energies. Restore Non-uniformity in effective QE. Restore Non-uniformity in effective QE. (Partial) Restoration in the Energy Scale. (Partial) Restoration in the Energy Scale. Traps with Other time scales are not negligible. Traps with Other time scales are not negligible.

11 Optimization of Split Threshold for BI1 G02346 event number G02346 event number FWHM (eV) FWHM (eV) Spth (ADU)

12 PHA-dependent SpTh PHA-dependent Split Threshold for BI

13 Bad (CTE) Columns Bad CTE Bad CTE Typically long trail in each event. Typically long trail in each event. Sometimes flickering pixel is observed. Sometimes flickering pixel is observed. Rows near the readout node can be used. Rows near the readout node can be used. Identification logic without accumulating 10^7events was developed. Identification logic without accumulating 10^7events was developed. EU= 21 bad columns/chip EU= 21 bad columns/chip FI0=14, FI1=12, FI2=17,FI3=24 FI0=14, FI1=12, FI2=17,FI3=24 BI0=23, BI1=50 BI0=23, BI1=50 How should we do for adjacent columns ? How should we do for adjacent columns ? X-ray image (number of events /pixel)

14 Kyoto Cal System Fluorescent X-rays (Al,Cl,Ti,Mn,Fe,Zn,Se) Fluorescent X-rays (Al,Cl,Ti,Mn,Fe,Zn,Se) Windowless Si-SSD is used as the reference counter, assuming 100% efficiency >1.5keV Windowless Si-SSD is used as the reference counter, assuming 100% efficiency >1.5keV XIS FI-CCD QE=96%@4.5keV is assumed XIS FI-CCD QE=96%@4.5keV is assumed QE=96%@4.5keV

15 Detector Chamber Manson Soft X-ray Generator Hetrick Spectrometer Calibration Facility in the Osaka Clean Room

16 Dispersion (Grating) Spectrum X-ray image X-ray image O-Kα ( 0.53ke V ) C-Kα (0.28keV ) X-ray energy Number of events/columns Dispersion direction projection FWHM ~ 5eV

17 Line profile against O-K line incidence Astro-E1 (FI) XIS Astro-E1 (FI) XIS 5 kV PHA(ADU) XIS1 (H.Katayama master thesis) FI2 Astro-E2 (FI) XIS Astro-E2 (FI) XIS

18 Line Profile model (1) Main Peak : Absorption in Depletion Layer (2) Sub Peak : Lost charge below Split- threshold (3) Triangle Comp. : Channel Stop origin (4) Constant Comp. : Partial absorption in SiO 2 parameters : T1 (normalization), C1(center), S1(sigma) T2 (relative to T1), C2(spth/2, fixed), S2 (1.78×S1, fixed) T3 (relative to T1), F3( 三角形の幅, 0.5×C1) T4 (T1 で規格化した面積 ) → フリーパラメタ 6 個 でフィット F3 BI structure

19 Line profile for FI1 sensor T2=0.033, T4=0.0052 T2=0.020, T4=0.0045 (Seg.B) O-K line E=0.525keV Se-L line E=1.379keV

20 Line profile for BI1 sensor O-K line E=0.525keV T2=0.19, T4=0.015T2=0.071, T4=0.011T2=0.078, T4=0.016 Al-K line E=1.487keV C-K line E=0.277keV

21 スペクトルの比較 BI1 g02346 カウント 数 エネルギー分解能 [eV] 補正前62403165.7±0.6 補正後72057163.0±0.6 補正+バッドコラム除去68894162.6±0.6

22 Energy and Pulse-height Linearity BI1, Seg.C FI1, Seg.C

23 Energy Resolution (FWHM) FI-1, Seg.C BI-1, Seg.C

24 Quantumn Efficiency Measurement at Osaka Relative Efficiencies of FM- FI0,FI1,FI2,FI3,BI0,BI1 and XIS-EU are measured by irradiating X-rays from the spectrometer to whole the CCD area. Relative Efficiencies of FM- FI0,FI1,FI2,FI3,BI0,BI1 and XIS-EU are measured by irradiating X-rays from the spectrometer to whole the CCD area. Generator beam current is always monitored and stabilized <1%. Generator beam current is always monitored and stabilized <1%. XIS-EU was cross-calibrated to a Gas PC on 2003Dec & 2004Jul. XIS-FM are not installed in the chamber with the Gas PC simultaneously. XIS-EU was cross-calibrated to a Gas PC on 2003Dec & 2004Jul. XIS-FM are not installed in the chamber with the Gas PC simultaneously. The gas PC was calibrated through the slant incident method in 2004 January. The gas PC was calibrated through the slant incident method in 2004 January.

25 X-rays Slant Incident Method: Application to Gas PC We determined to use the Gas PC as the reference counter

26 Counts PH (ch) 0° 30° 45° Gas PC Spectra for Different Incident Angle

27 30°/0° 45°/0° Ratio of Counting rate of Gas PC Best fit estimate Poly propylene thickness 1.01±0.06  m H2OH2OH2OH2O 0.281±0.048  m P10gas dead layer 79.6±9.7  m

28 PC QE model

29 XIS-EU and Gas PC cross calibration using a entrance slit

30 X-rays through Slit ( ~1mm) Dispersion Direction

31 PC (0.525keV) XIS-EU (0.525keV) PC Spectra and CCD Spectra

32 Best Fit Estimates SiO2 0.471±0.039  m Si 0.205±0.029  m Si3N4 0.000±0.03  m Si depletion  m fixed 65  m fixed Constant Factor 0.852±0.035 -1deg offset slant-PC is assumed

33 Relative QE of FMFI / XIS-EU FI0FI1 FI2 FI3 Red=determined from the line components Long term variability is too high to be precisely corrected

34 Relative QE of BI0,BI1 to XIS-EU BI0 BI1 ~ 80@0.28 keV ~ 10@0.6 keV

35

36 Best Fit Estimates SiO2 0.443±0.039  m Si 0.181±0.029  m Si3N4 0.000±0.016  m Si depletion ±1.7  m 68.9±1.7  m Constant Factor 0.857±0.003 -1deg offset slant-PC is assumed

37 XAFS near the O-Kedge FI-2 E edge = 0.532 ± 0.001 keV red.  2 = 1.3178 (d.o.f. = 418)

38 Best Fit Estimates HfO2 0.005  m fixed Ag 0.001  m fixed SiO2 0.000±0.0005  m Si depletion ±0.7  m 45.7±0.7  m Constant Factor 0.934±0.003 -1deg offset slant-PC is assumed

39 Upper limit of Surface dead layer in BI-CCD 0.45 0.5 0.55 0.6 keV H 2 O on BI1 <0.11 μm Dispersion Spectrum with BI μm (H 2 O)

40 Absolute QE issues Reconsider the assumptions Reconsider the assumptions 96% at 4.5keV for XIS-FI Check grade7 events ? Gas PC window model Mesh measurement ? ACIS BESSY calibration How was the effective area or normalization calibrated ? How about Channel Stop events ? Hidden dead space in FI ? Adopt the BI1 QE as a reference BI QE should not be 1 (at least a few % grade 7 events) How do we model F_data-reduction ? Application of the Slant Incidence method to BI0 after the Astro-E2 launch. Any other good way for the absolute QE cal ? Energy independent factor of 10% is not a problem. Edge structure of 10% might be a problem.

41 Summary We have completed the calibration experiments on the ground for XIS flight models. We have completed the calibration experiments on the ground for XIS flight models. Data reduction procedures were updated for Astro-E2 XIS. Data reduction procedures were updated for Astro-E2 XIS. Conversion to FTOOLS will be required. Conversion to FTOOLS will be required. Profile has less tail component than Astro-E1 XIS. Profile has less tail component than Astro-E1 XIS. Relative QE between the XIS sensors were accurately measured <5%?. Relative QE between the XIS sensors were accurately measured <5%?. We need further work on absolute QE. We need further work on absolute QE.


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