# Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice.

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Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice from SVT GaAs P 1-x x, 0 { "@context": "http://schema.org", "@type": "ImageObject", "contentUrl": "http://images.slideplayer.com/2/720625/slides/slide_1.jpg", "name": "Operated by the Southeastern Universities Research Association for the U.S.", "description": "Depart. Of Energy Thomas Jefferson National Accelerator Facility Strained superlattice from SVT GaAs P 1-x x, 0

Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Quantum Efficiency At bandgap: I ~ 6 muA/mW

Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Polarization Pe ~ 80% at 780 nm

Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Analyzing power SVT superlattice: A.P. ~ 3% Peak to peak A.P. Spire strained layer: A.P. ~ 10%

Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Conclusions Polarization at least as high as S.L. P ~ 80% QE is 5 times higher than S.L.QE ~ 1% Analyzing power smallerA.P. ~ 3% Wafer treatment different, under study Sample loaded in tunnel failed Highs: Lows:

Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Polarization uniformity Uniform across a single chip

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