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1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write.

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Presentation on theme: "1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write."— Presentation transcript:

1 1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD Jim Hutchby – SRC U-In Chung - Samsung December 9, 2008

2 2 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Hiroyugi AkinagaAIST Tetsuya AsaiHokkaido U. Yuji AwanoFujitsu George BourianoffIntel Michel BrillouetCEA/LETI Joe BrewerU. Florida John CarruthersPSU Ralph CavinSRC U-In ChungSamsung Byung Jin ChoKAIST Sung Woong ChungHynix Shamik DasMitre Erik DeBenedictisSNL Simon Deleonibus LETI Kristin De MeyerIMEC Michael FrankAMD Christian GamratCEA Mike GarnerIntel Dan HammerstromPSU Wilfried HaenschIBM Tsuyoshi HasegawaNIMS Shigenori HayashiMatsushita Dan HerrSRC Toshiro HiramotoU. Tokyo Matsuo HidakaISTEK Jim HutchbySRC Adrian IonescuETH Kohei ItohKeio U. Kiyoshi KawabataRenesas Tech Seiichiro KawamuraSelete Rick KiehlU. Minn Suhwan KimSeoul Nation U. Hyoungjoon KimSamsung Atsuhiro KinoshitaToshiba Dae-Hong KoYonsei U. Hiroshi KotakiSharp Atsuhiro KinoshitaToshiba Franz KreuplQimonda Nety KrishnaAMAT Zoran KrivokapicAMD Phil KuekesHP Jong-Ho LeeKyungpook Nation U. Lou LomeIDA Hiroshi MizutaU. Southampton Murali Muraldihar Freescale Fumiyuki NiheiNEC Ferdinand PeperNICT Yaw ObengNIST Dave RobertsAir Products Kaushal SinghAMAT Sadas ShankarIntel Satoshi SugaharaTokyo Tech Shin-ichi TakagiU. Tokyo Ken UchidaToshiba Yasuo WadaToyo U. Rainer WaserRWTH A Franz Widdershoven NXP Jeff WelserNRI/IBM Philip WongStanford U. Kojiro YagamiSony David YehSRC/TI In-Seok YeoSamsung In-K YooSAIT Peter ZeitzoffFreescale Yuegang ZhangLLLab Victor ZhirnovSRC Emerging Research Devices Working Group

3 3 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 year Beyond CMOS Elements Existing technologies New technologies Evolution of Extended CMOS More Than Moore ERD-WG in Japan

4 4 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 New ERD/ERM Roadmapping Task Determine which, if any, current approaches to providing a Beyond CMOS information processing technology is/are ready for more detailed roadmapping and enhanced investment.

5 5 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December ERD/ERM Workshops Co-sponsored by the National Science Foundation

6 6 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Candidate Technologies for Information Processing 6

7 7 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Emerging Research Device Technology Candidates Evaluated Nano-electro Mechanical Switches Collective Spin Devices Spin Transfer Torque Devices Atomic Switch / Electrochemical Metallization Switch Carbon-based Nanoelectronics Single Electron Transistors CMOL / Field Programmable Nanowire Interconnect (FPNI)

8 8 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 ERD/ERM TWG Recommendation The ERD/ERM TWGs recommend to the International Roadmap Committee --- Carbon-based Nanoelectronics to include carbon nanotubes and graphene For additional resources and detailed road mapping for ITRS as promising technologies targeting commercial demonstration in the 5-10 year horizon.

9 9 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 SP 2 Carbon: 0-Dimension to 3-Dimension Fullerenes (C 60 ) Carbon Nanotubes Graphite Graphene 0D1D2D3D Atomic orbital sp 2

10 10 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Graphene Electronics: Conventional & Non-conventional Conventional Devices Cheianov et al. Science (07) Graphene Veselago lense FET Band gap engineered Graphene nanoribbons Nonconventional Devices Trauzettel et al. Nature Phys. (07) Graphene psedospintronics Son et al. Nature (07) Graphene Spintronics Graphene quantum dot (Manchester group)

11 11 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Nanotube FET Band gap: 0.5 – 1 eV On-off ratio: ~ 10 6 Mobility: ~ 100,000 cm 2 ~ nm Fermi velocity: 10 6 m/sec Max current density > 10 9 A/cm 2 V sd (V) I sd ( A) Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007) Schottky barrier switching

12 12 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Advantages Carbon-based Nanoelectronics --- For scaled CMOS, potentially can.. Impact geometric scaling by providing an alternate MOSFET structure, and Provide a high mobility, high carrier velocity, MOSFET channel replacement material. For a new information process technology, potentially can … Leverage R & D for CMOS (above) to … Provide a technology platform enabling a new Beyond CMOS information processing paradigm

13 13 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Carbon-based Nanoelectronics The intent of this recommendation is to highlight Carbon-based Nanoelectronics for additional roadmapping and investment --- while sustaining exploration of other candidate approaches for Beyond CMOS information processing technology.

14 14 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Summary Prepared for the 2009 ERD Chapter re-write Conducting six workshops in collaboration with NSF, SRC, and ERM (Five accomplished) – Evaluate technology entries for 2009 – Respond to IRC request (see next bullet) Responded to IRC request to identify one or more Beyond CMOS technologies for roadmapping and enhanced investment – Conducted in-depth evaluation of seven Beyond CMOS technologies (including one device architecture) – Recommended Carbon-based Nanoelectronics to IRC

15 15 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 Emerging Research Device Work Groups International Emerging Research Devices (ERD) Work Group US ERD WG Korea ERD WG European ERD WG Japan ERD WG Dr. U-In Chung

16 December 9th 2008 U-In Chung, Samsung ITRS ERD/ERM in KOREA

17 17 KSIA Korea TWGs ERD(ERM) WG ERD ; U-In Chung (Samsung) ERMemory Leader : In-Seok Yeo (Samsung) S.W.Chung(Hynix), H.S.Hwang (GIST), T.W.Kim (Sejong univ.), H.C.Sohn (Yonsei univ.), J.I.Hong (Yonsei univ.), C.S.Hwang(Seoul National univ.) ERDevice Leader : Jong-Ho Lee (Kyungpook univ.) S.G.Kim(Dongbu high tech.), H.C.Shin(Seoul national univ.), Y.G.Choi(KAIST) ERArchi. Leader : Su-Hwan Kim (Seoul national univ.) K.W.Kwon (SungKyunKwan univ.) ERM ; Liaison : U-In Chung ERMaterial Leader; Dae-Hong Ko (Yonsei univ.) J.M Myoung(Yonsei univ.), S.H.Hong(Seoul national univ.), J.H.Lee(Hanyang univ.), B.J.Cho(KAIST) IRC : Joo-Tae Moon (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu) ERD/ERM Organization & Member

18 18 Relations in between organization KSIA TWG of Korea ERD/ERM WG (U-in Jung) INC (Jin-ho Ahn) 4 Group/ 19 member Device Maker Researcher (Samsung, Hynix, Dong-bu) Professor (8 Univ. Seoul nat. univ. etc) Member Device Maker Technology Group (Samsung, Hynix, Dong-bu) TND (Tera Level Nano Device) Research group NSI (Nano systems institute, Seoul Univ.) COSAR R&D Promotion [ITRS] [INC]

19 19 ERD(ERM) WG INC WG Sharing WG members 1.Maintaining relationship between ITRS, INC and National Projects by sharing working group members National Projects Leaders KSIA / COSAR Key Direction(1) 2. Active interaction with ITRS ERD members through ITWG activities and forums : Working on 2009 ERD/ERM edition.

20 20 3. Regional interests ; a. Emerging Research memory : Narrowing ~10nm memory candidates Key Direction(2) Nanomechanical Memory Fuse- Antifuse Memory Ionic Memory Electronic Effects Memory Macro- molecular Memory Molecular Memories Storage Mechanism Electrostatically- controlled mechanical switch Multiple mech. Ion transport and redox reaction Multiple mechanisms Multiple mech. Not known Cell Elements 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R Device Types 1) Nanobridge / cantilever 2) telescoping CNT 3) Nanoparticle M-I-M (e.g., Pt/NiO/P t) 1) cation migration 2) anion migration 1) Charge trapping 2) Mott transition 3) FE barrier effects M-I-M (nc)-I-M Bi-stable switch

21 21 Key Direction(3) 3. Regional interest ; b. Emerging Research Device : - GaAs and Ge in ERD - Focus on Energy effective devices (ex. BTBT devices) c. Emerging Research Architectures : - Focus on 3D Architectures ( CMOL, Molecular (oxide) switch bar ) d. Emerging Research Materials : - Will work with Korean TWIGs such as Interconnect, PKG - Too much focus on Devise, Focus on Material for memory - Many forums on memory materials for MLC and 3 D


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