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ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging Research Materials [ERM] December 9, 2008 Michael.

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Presentation on theme: "ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging Research Materials [ERM] December 9, 2008 Michael."— Presentation transcript:

1 ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging Research Materials [ERM] December 9, 2008 Michael Garner – Intel Daniel Herr – SRC

2 ITRS Winter Conference 2008 Seoul, Korea 2 Work in Progress: Not for Distribution 2008 ERM Participants Hiro AkinagaAIST Nobuo Aoi Matsushita Koyu Asai Renesas Yuji Awano Fujitsu Daniel-Camille Bensahel STM Bill Bottoms Nanonexus George BourianoffIntel Alex BratkovskiHP John Carruthers Port. State Univ. U-In Chung Samsung Hongjie Dai Stanford Univ. Jean DijonLETI Satoshi FujimuraTOK Michael Garner Intel Joe Gordon IBM Daniel HerrSRC Jim Hutchby SRC Kohei Ito Keio Univ. James JewettIntel Ted Kamins HP Dae-Hong KoYonsei University Louis Lome IDA cons. Francois Martin LETI Fumihiro Matsukura Tohoku U Yoshio Nishi Stanford Yaw Obeng NIST Nachiket Raravikar Intel Curt Richter NIST Dave Roberts Air Products Tadashi Sakai Toshiba Mitusru Sato TOK Sadasivan Shankar Intel Atsushi Shiota JSRMicro Kaushal Singh AMAT Naoyuki Sugiyama Toray Shinichi Tagaki U of Tokyo Koki Tamura TOK Yasuhide Tomioka AIST Ken Uchida Toshiba Bert Vermiere Env. Metrol. Corp. Yasuo Wada Toyo U Vijay Wakharkar Intel Kang Wang UCLA H.S. Philip Wong Stanford University Hiroshi Yamaguchi NTT Toru Yamaguchi NTT Victor Zhirnov SRC

3 ITRS Winter Conference 2008 Seoul, Korea 3 Work in Progress: Not for Distribution Outline ERM Goals, Scope, Plans, and Projected Timing ERM for extending CMOS Alternate Channel Materials Lithography FEP Interconnects ERM for Beyond CMOS Assembly & Packaging Example ERM Metrology & Modeling Needs ESH Summary

4 ITRS Winter Conference 2008 Seoul, Korea 4 Work in Progress: Not for Distribution Macromolecular Scale Devices are on the ITRS Horizon ITRS Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp (2001). Macromolecular Scale Components: Low dimensional nanomaterials Macromolecules Directed self-assembly Complex metal oxides Hetero-structures and interfaces Spin materials Macromolecular Scale Devices

5 ITRS Winter Conference 2008 Seoul, Korea 5 Work in Progress: Not for Distribution Emerging Research Materials [ERM] Goal: Identify critical ERM technical and timing requirements for ITWG identified applications Align ERM requirements with ITWG needs Identify difficult research challenges that must be overcome ERM that exhibit potential to address ITWG gaps and requirements Consolidate materials research requirements for: University and government researchers Chemists, materials scientists, etc. Industry Researchers Semiconductor Chemical, material, and equipment suppliers

6 ITRS Winter Conference 2008 Seoul, Korea 6 Work in Progress: Not for Distribution 2008 Key Messages No updates in ERM Chapter in 2008 Preparations for 2009 ERM Chapter Establish Critical Assessment Process Add ERD Alternate Channel Materials Increase Focus on Carbon Based Devices Workshops In Process

7 ITRS Winter Conference 2008 Seoul, Korea 7 Work in Progress: Not for Distribution Emerging Research Materials: Workshop Calendar

8 ITRS Winter Conference 2008 Seoul, Korea 8 Work in Progress: Not for Distribution ERM Potential Insertion Matrix Application Opportunities Ge and III-V Conducting Nanotubes Nanowires Graphene Oxide Nanoparticles Metal Nanoparticles Novel Macromolecules Self-Assembled Materials Complex Metal Oxides Spin Materials [Fe, Co, Mn, Ni, etc.] DMS- Channel Process Materials Lithography ? Device: Memory * MRAM Device: Logic Interconnect Packaging < 2 yrs. Earliest Potential Insertion Horizon Current Application 3-5 yrs.5-10 yrs yrs.15+ yrs. Not on Roadmap

9 ITRS Winter Conference 2008 Seoul, Korea 9 Work in Progress: Not for Distribution 2009 ERM Critical Assessment Candidates MaterialsERD Memory ERD LogicLithographyFEPInterconnectsAssembly and Package Alternate Channel Material Critical Assessment Low Dimensional Materials Critical Assessment Critical Assessment: Vias and Interconnects Critical Assessment: Nano-tubes/solders for chip attach MacromoleculesCritical Assessment Self Assembled Materials Critical Assessment Spin Materials Complex Metal Oxides

10 ITRS Winter Conference 2008 Seoul, Korea 10 Work in Progress: Not for Distribution ERM Assessment Matrix: Ex. Lithography Rating Person Lithography Materials Evaluation Table: Novel Macromolecules Average Potential Sum Potential Demonstrated Resolution Defect Density SpeedLER Ability to Simultaneously Achieve Resolution, Sensitivity, & Line Edge Roughness Etch Compatibility (hard mask compatible) Outgassing (EUV) Stripablity Research Target Novel Molecules for Dual Exposure Resist Novel Molecules for Dual Exposure CEL Non CAR Resist Self Assembly (graphepitaxy) Hybrid Resist & Self Assembly Surface Patterned Self Assembly Average #DIV/0! StdDev #DIV/0!

11 ITRS Winter Conference 2008 Seoul, Korea 11 Work in Progress: Not for Distribution Extending CMOS Alternate Channel Materials Alternate Channel Materials Ge & III-V Compounds Nanowires Graphene Carbon Nanotubes III-V Heterostructures (L. Samuelson, Lund Univ.) P. Kim, Columbia Univ. Carbon Nanotube FET Source Intel Assess Materials Performance Gate materials Contacts Interfaces MOS Also Identify Novel Metrology & Modeling Needs

12 ITRS Winter Conference 2008 Seoul, Korea 12 Work in Progress: Not for Distribution ERM to Extend Moores Law Lithography Novel molecules Directed Self Assembly P. Nealey, U. Wisc. Dendrimers, Frechet, UC-B Molecular Glasses Ober, Cornell Ross, MIT Interconnects Front End Processes Y. Awano, Fujitsu Nanotubes Nanowires Self Assembled Materials Directed Self Assembly Selective Deposition Selective Etching Deterministic Doping

13 ITRS Winter Conference 2008 Seoul, Korea 13 Work in Progress: Not for Distribution Deterministic Doping: Assess the Impact of Ordered Dopant Arrays on Device Performance Approach: Fabricate semiconductors with various ordered distributions of dopant atoms and compare their performance with that of existing semiconductors that have a random arrangement of dopant atoms. Source Drain Channel Gate ? Ordered distribution of dopant atoms

14 ITRS Winter Conference 2008 Seoul, Korea 14 Work in Progress: Not for Distribution Beyond CMOS Materials & Interfaces Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules [Potential Transition Out of ERM] Interfaces & state transport materials Spin State Molecular State Ferroelectric Polarization Resistance Change Mechanical State Electrochemical Atomic Switch FE FET Individual or Collective

15 ITRS Winter Conference 2008 Seoul, Korea 15 Work in Progress: Not for Distribution Emerging Packaging Applications Thermal Nanotubes High Density Power Delivery Capacitors Dielectrics: High K Self Assembly Interconnects: Nanotubes or Nanowires Package Thermo-Mechanical Substrate: Nanoparticles, Macromolecules Adhesives: Macromolecules, Nanoparticles Chip Interconnect: Nanoparticles

16 ITRS Winter Conference 2008 Seoul, Korea 16 Work in Progress: Not for Distribution Emerging Metrology and Modeling Needs Metrology Chemical and structural imaging and dimensional accuracy at the nm scale [Nondestructive, 3D imaging] Low dimensional material properties (Mapping) Nano-interface characterization (carbon) Simultaneous spin and electrical properties nm scale characterization of vacancies and defects Modeling Materials and Interfaces Low dimensional material synthesis & properties Spin material properties Strongly correlated electron material properties Long range and dynamic Integrated models and metrology (de-convolution of nm scale metrology signals) Metrology and modeling must be able characterize and predict performance and reliability

17 ITRS Winter Conference 2008 Seoul, Korea 17 Work in Progress: Not for Distribution Environment, Safety, and Health Metrology needed to detect the presence of nanoparticles Research needed on potential undesirable bio- interactions of nanoparticles Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercializatio n Leverage Existing Research and Standards Activities

18 ITRS Winter Conference 2008 Seoul, Korea 18 Work in Progress: Not for Distribution 2009 Emerging Research Materials Summary Establish ERM Outline and Writing Assignments Restructuring to Application Centric organization Establish links to other ITWG chapters, as warranted Complete Critical Assessment Process Critical Assessment: CMOS Extension, Interconnect, and Lithography Beyond CMOS: Trends on critical materials & properties Complete ERM Workshop s All workshops identify Metrology, Modeling and ESH support as appropriate Finalize new materials needs and transitions ERD, Lithography, FEP, Interconnects, Assembly & Packaging, PIDS Establish Concrete targets Functional Diversification

19 ITRS Winter Conference 2008 Seoul, Korea 19 Work in Progress: Not for Distribution 19 Thank You What if?


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