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ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] December 3, 2010 Michael.

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Presentation on theme: "ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] December 3, 2010 Michael."— Presentation transcript:

1 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] December 3, 2010 Michael Garner – Intel Daniel Herr – SRC

2 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ERM Participants Hiro AkinagaAIST Jesus de AlamoMIT Tsuneya Ando Tokyo Inst. Tech Dimitri Antoniadis MIT Nobuo Aoi Panasonic Koyu Asai Renesas Asen Asenov U. of Glasgow Yuji AwanoKeio Univ David AwschalomUCSB. Kaustav Banerjee UCSB Daniel-Camille Bensahel ST Micro Stacey Bent Stanford U. Kris Bertness NIST Bill Bottoms Nanonexus George Bourianoff Intel Rod Bowman Seagate Alex BratkovskiHP Robert BristolIntel Bernard CapraroIntel John Carruthers Port. State Univ. An Chen Global Foundry Eugene Chen Grandis Zhihong ChenIBM Toyohiro Chikyo NIMS Byung Jin Cho KAIST U-In Chung Samsung Luigi Colombo TI Hongjie Dai Stanford U. Thibaut Devolder Univ. Paris Sud Athanasios Dimoulas IMS Greece Catherine Dubourdieu L. Mat. Genie Phys. & IBM John Ekerdt U. of Texas Tetsuo Endoh Tohoku Univ. James Engstrom Cornell U. Michael Flatte U. Iowa Satoshi Fujimura TOK Michael Garner Intel Niti Goel Intel Michael GoldsteinIntel Suresh Golwalkar Intel Wilfried Haensch IBM Dan HerrSRC Hiro Hibino NTT Bill HinsbergIBM Judy HoytMIT Jim HutchbySRC Ajey JacobIntel David Jamieson U. Melbourne Ali JaveyU.C. Berkeley James JewettIntel Berry JonkerNRL Xavier JoyeuxIntel Ted KaminsConsultant Zia Karim AIXTRON AG Takashi KariyaIbiden Masashi Kawaski Tohoku U. Leo KennyIntel Philip KimColumbia U. Sean KingIntel Atsuhiro Kinoshita Toshiba Michael KozickiASU Mark Kryder CMU Yi-Sha KuITRI Hiroshi Kumigashira U. Tokyo Y.J. Lee Nat. Nano Lab TW Liew Yun Fook A-Star Wei-Chung LoITRI Louis LomeIDA Cons. Gerry LucovskyNCSU Mark Lundstrom Purdue U. Yale Ma Seagate Blanka Magyari-Kope Stanford U. Allan MacDonaldUniv. of Texas Prashant Majhi Intel Witek Maszara Global Foundry Francois Martin LETI Fumihiro Matsukura Tohoku U. Nobuyuki Matsuzawa Sony Jennifer Mckenna Intel Claudia Mewes U. Alabama Yoshiyuki Miyamoto NEC Andrea Morello UNSW Boris Naydenov U. Stuttgart Paul Nealey U. Wisc. Kwok NgSRC Fumiyuki Nihey NEC Yoshio Nishi Stanford U. Dmitri Nikonov Intel Yaw ObengNIST Chris OberCornell Univ Katsumi Ohmori. TOK Yoshichika Otani Riken Inst. Jeff PetersonIntel Alexei Preobrajenski Lund Univ. Victor Pushparaj AMAT Ganapati Ramanath RPI Ramamoorthy Ramesh U.C. Berkeley Nachiket Raravikar Intel Heike Riel IBM Dave Roberts Nantero Mark Rodwell UCSB Sven Rogge Delft U. Jae Sung Roh Hynix Tadashi Sakai Toshiba Gurtej Sandhu Micron Krishna Saraswat Stanford U. Hideyki Sasaki Toshiba Nanoanalysis Shintaro Sato AIST Akihito Sawa AIST Barry Schechtman INSEC Thomas Schenkel LBNL Sadasivan Shankar Intel Mizuki Sekiya AIST Matt Shaw Intel Takahiro Shinada Waseda Univ. Michelle Simmons UNSW Kaushal Singh AMAT Jon Slaughter Everspin Bruce Smith RIT Tsung-Tsan Su ITRI Maki Suemitsu Tohoku U. Naoyuki Sugiyama Toray C-Y Sung IBM Raja Swaminathan Intel Michiharu Tabe Shizuoka U. Hidenori Takagi U. of Tokyo Shin-ichi Takagi U. of Tokyo Koki Tamura TOK America Ian Thayne U. of Glasgow Yoshihiro Todokoro NAIST Yasuhide Tomioka AIST Mark Tuominen U. Mass Peter Trefonas Dow Ming-Jinn Tsai ITRI Wilman Tsai Intel Ken Uchida Tokyo Tech Yasuo Wada Toyo U Vijay Wakharkar Intel Kang Wang UCLA Rainer Waser Aacken Univ. Jeff Welser IBM/NRI C.P. Wong GA Tech. Univ. H.S. Philip Wong Stanford U. Dirk Wouters IMEC Wen-Li Wu NIST Hiroshi Yamaguchi NTT Toru Yamaguchi NTT Chin-Tien Yang ITRI Hiroaki Yoda Toshiba Jiro Yugami Renasas SC Zhang Stanford U. Yuegang Zhang LBNL Victor Zhirnov SRC Paul Zimmerman Intel

3 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 Key Messages 2010: No Updates in ERM Chapter Preparation for 2011 ERM Chapter –Updating Material Progress –Critical Assessments of ERM –Identifying New ITWG Requirements for ERM –Transition Mature Materials to ITWGs –Workshops Memory Materials Workshop: Completed Directed Self Assembly Litho Applications Deterministic Doping: Completed e-Workshops

4 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Extending CMOS Alternate Channel Materials Alternate Channel Materials -Ge & III-V Compounds ( Transition to FEP & PIDS) -Nanowires -Graphene -Carbon Nanotubes III-V Heterostructures (L. Samuelson, Lund Univ.) A. Geim, Manchester U. Assess Materials Performance Gate materials Contacts Interfaces MOS -Identify Novel Metrology & Modeling Needs D. Zhou, USC

5 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Beyond CMOS Materials & Interfaces Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules Interfaces Native Interconnects Spin StateFerroelectric Polarization Negative Capacitance FET Individual or Collective Charge Based States Other Than Charge Only

6 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Memory Materials Workshop , Tsukuba, Japan (38 participants) Redox RAM: How can we experimentally verify that the Redox RAM operating mechanism? STT-RAM: What materials or interface research should be performed to enable reduction of write energy by 10X? Even with the combination of MgO-CoFeB (normally in-plane), interface control enables Perpendicular MTJ.

7 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Lithography Novel Molecules for Double Exposure Evolutionary Resist Design -Positive Resist Novel Molecules Resist New Applications of Old Resist Non-Chem Amp (193nm) Negative Resist (EUV) Molecular Glasses Ober, Cornell Hinsberg, IBM Directed Self Assembly (DSA) 9DSA Intermediate State Tethered Anthracene Bristol, Intel Transition Evolutionary Resist to the Litho TWG Two DSA Workshops 2011 Critical Assessment Defect Control

8 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Front End Processing Zero Impact Cleans Selective etch Selective deposition Ho, Javey, Nature Materials 2008 Monolayer Doping DSA Produces Order Implant Delivers Dopants Massive Parallel Dopant Control Deterministic Doping Workshop Progress Deterministic Doping Workshop Berkeley, CA November 12, 2010 Bosworth, Ober, ACS NANO 2008 Patterning & doping via DSA Inoue, Ultramicroscopy D atom probe Roy, Asenov Science D simulation Metrology and Modeling Progress

9 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Interconnect Materials Interconnects - Carbon Nanotubes -Graphene Ultra-thin Barrier Layers Transition Zr Barriers to Interconnect TWG Novel sub 5nm materials SAM Ultra low κ ILD Novel Interconnects & Vias Native Interconnect MIRAI-Selete / TOSHIBA, APEX 3 (2010) Fujitsu Lab / CREST, APEX 3 (2010)

10 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 3D Interconnects Chip Attach Materials With Thermal Hierarchy –Electrical Interconnects –Nanosolders –Polymers Stress and Thermal Management Materials Self Aligning Material Technologies –Beyond surface tension…

11 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Assembly & Package 1D Interconnects –Critical Assessment –Nanosolder, CNT & NW Polymers with Mechanical, Electrical & Thermal Properties Polymers With Zero Moisture Absorption Ion Free or Immune Mold Compound Management of III-V & Ge Device Stress

12 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Hexagon of Assembly Material Requirements Highly coupled Material Properties Apply novel materials to achieve optimal performance CTE Modulus Fracture Toughness Functional Properties Moisture Resistance Adhesion Examples Thermal Interface Mat. Mold Compound Underfill Adhesives Epoxy

13 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution ESH Challenges Materials needed to overcome significant technical challenges –Low energy processes and new materials for low energy integrated circuits –Few materials can meet requirements –Some materials have known hazards or uncharacterized ESH properties –Stimulate ESH research in uncharacterized materials –Good methods for materials ESH in Research, Development & Manufacturing –Efficient use of materials

14 ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution Summary 2010: No Updates to ERM Chapter 2011: Updates to ERM Progress Critical Assessments of ERM for Specific Applications Targeted Workshops on ERM Progress e-Workshops for Material Updates


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