16 E-mail Compromise between ITWG Blank Defect SizeCompromise between ITWGJapan – SELETE DataUSA – Berkley Modeling C. CliffordIMEC – Rik Jonckheere
17 Comparison to Selete Data This data matches very well. Selete is measuring the bump in one dark line. C. Clifford am measuring the space CD. The space CD change is two times larger than the bump in the dark line for a defect centered between the lines and normal incidence.Selete’s 5% and 10% lines can be compared to my 10% and 20% lines17
18 [L2] Blank Defect Size —A blank defect is any unintended blank anomaly that prints or changes a printed image size by 10% or more. The mask defect size listed in the roadmap are the square root of the area of the smallest opaque or clear “defect” that is expected to print for the stated generation. This includes phase defects that may come from the substrate or multilayer. A phase defect is a defect that causes a phase change of around 180 deg. (For EUVL this would normally be a 3.5 nm height change.) It should be noted that smaller phase defects will also print but at a larger size limit. (ie a 90 deg defect will print at about 2X the size of the 180 deg defect)
24 Summary Lithography solutions for 2010 Lithography solutions for 2013 45 nm half-pitch CoO is Driving 193 Immersion Single Exposure for DRAM/MPUFlash using Double Patterning (Spacer) for 32 nm half-pitchLithography solutions for 201332 nm half-pitch Double patterning or EUV? for DRAM/MPU22 nm half-pitch Double patterning or EUV for FlashDouble exposure / patterning requires a complex set of parameters when different exposures are used to define single layersLER and CD Control Still remain as a Dominant IssueMask Complexity for Double patterningMask Infrastructure for EUV
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