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1 2009 Litho ITRS Update Lithography iTWG July 2009.

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Presentation on theme: "1 2009 Litho ITRS Update Lithography iTWG July 2009."— Presentation transcript:

1 Litho ITRS Update Lithography iTWG July 2009

2 2 Outline Lithography Potential Solutions Major Challenges

3 3 ITRS Working Group United States –Greg Hughes SEMATECH (Chairs) –Mike Lercel IBM Japan –Takayuki Uchiyama NEC (Chair) –Naoya Hayashi DNP –Masomi Kameyama Nikon –Tetsuo Yamaguchi NuFlare Taiwan –Anthony Yen TSMC (Chair)

4 4 Potential Solutions 2009

5 5 Preferred Technology by Year 2008 SEMATECH Litho Forum survey results 45nm HP 32nm HP 22nm HP

6 Litho Requirements

7 7 Single Litho Tool Overlay

8 Litho Requirements Restricted Definition of CD - one direction, single pitch, single iso dense ratio.

9 Lithography Techniques

10 10 Difficult Challenges > 22nm

11 11 Difficult Challenges > 22nm

12 12 Difficult Challenges <= 22nm

13 13 Difficult Challenges <= 22nm

14 14 Summary Lithography solutions for 2010 –45 nm half-pitch CoO is Driving 193 Immersion Single Exposure for DRAM/MPU –Flash using Double Patterning (Spacer) for 32 nm half-pitch Lithography solutions for 2013 –32 nm half-pitch Double patterning or EUV for DRAM/MPU –22 nm half-pitch Double patterning or EUV for Flash Double exposure / patterning requires a complex set of parameters when different exposures are used to define single features LER and CD Control Still remain as a Dominant Issue Mask Complexity for Double patterning Mask Infrastructure for EUV


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