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ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 1 2012 ITRS Emerging Research Materials [ERM] December 5, 2012 C. Michael.

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Presentation on theme: "ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 1 2012 ITRS Emerging Research Materials [ERM] December 5, 2012 C. Michael."— Presentation transcript:

1 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution ITRS Emerging Research Materials [ERM] December 5, 2012 C. Michael Garner, GNS/Stanford Hiro Akinaga, AIST Dan Herr, UNCG

2 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution ERM Participants Hiro AkinagaAIST Tsuneya Ando Tokyo Inst. Tech Nobuo Aoi Panasonic Bernd AppeltASE Koyu Asai Renesas Yuji AwanoKeio Univ Daniel-Camille Bensahel ST Micro Kirill Bolotin Vanderbilt Univ. Bill Bottoms Nanonexus George Bourianoff Intel Bernard CapraroIntel Arantxa Maestre-Caro Intel John Carruthers Port. State Univ. An Chen Global Foundry Zhihong ChenIBM Joy ChengIBM Byung Jin Cho KAIST Luigi Colombo TI Geraud Dubois IBM Catherine Dubourdieu Inst. Nanotech. de Lyon Nathan FritzIntel. Michael Garner GNS/ Stanford Michael Goldstein Intel Wilfried Haensch IBM Dan Herr UNCG/JSNN ChiaHua Ho NDL Jim HutchbySRC Berry JonkerNRL Ted KaminsStanford U. Leo KennyIntel Choong-Un Kim UT Arlington Sean King Intel Atsuhiro Kinoshita Toshiba Paul Kohl Ga Tech Blanka Magyari-Kope Stanford U. Ming-Hsiu (Eric) Lee Macronix Yao-Jen Lee NDL Liew Yun Fook A-Star Timothy E. Long VA Tech Prashant Majhi Intel Francois Martin LETI Fumihiro Matsukura Tohoku U. Nobuyuki Matsuzawa Sony Jennifer Mckenna Intel Yoshiyuki Miyamoto AIST Kei Noda Kyoto University Yaw ObengNIST Chris OberCornell Univ Matsuto Ogawa Kobe University Katsumi Ohmori. TOK Yutaka Ohno Nagoya University Tomas Palacios MIT Samuel Pan TSMC Er-Xaun Ping AMAT Joel Plawsky RPI Dave Roberts Nantero Tadashi Sakai Toshiba Gurtej Sandhu Micron Hideyki Sasaki Toshiba Nanoanalysis Shintaro Sato AIST Akihito Sawa AIST Barry Schechtman INSEC Sadasivan Shankar Intel Matt Shaw Intel Takahiro Shinada AIST Michelle Simmons UNSW Kaushal Singh AMAT. Satofumi Souma Koube Univ Naoyuki Sugiyama Toray Shin-ichi Takagi U. of Tokyo Masahiro Takemura NIMS Koki Tamura TOK America Yoshihiro Todokoro NAIST Yasuhide Tomioka AIST Luan Tran TSMC Peter Trefonas Dow Ming-Jin Tsai ITRI Wilman Tsai Intel Emanuel Tutuc UT Austin Ken Uchida Keio Univ. Kang Wang UCLA H.S. Philip Wong Stanford U. Dirk Wouters IMEC Wen-Li Wu NIST Shigeru Yamada Ibiden Hiroshi Yamaguchi NTT Toru Yamaguchi NTT Fu-Liang Yang NDL Hiroaki Yoda Toshiba Victor Zhirnov SRC Paul Zimmerman Intel Ehrenfried Zschech Fraunhofer Inst.

3 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution Key Messages 2011 ERM Chapter will not be updated in 2012 ERM is preparing for 2013 ITRS Rewrite Aligning with iTWG New Requirements Planning e-Workshops Identifying potential material transitions Identifying support capabilities needed Significant Challenges for all Materials

4 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 4 Memory Materials Ferroelectric Memory Nanoelectromechanical (NEMM) Redox RAM Mott Memory Macromolecular Molecular

5 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 5 Extending CMOS Logic Alternate Channel Materials Alternate Channel Materials -n-Ge & p-III-V -Nanowires -Graphene -Carbon Nanotubes III-V Heterostructures (L. Samuelson, Lund Univ.) A. Geim, Manchester U. Assess Materials Performance Gate materials Contacts Interfaces MOS -Identify Novel Metrology & Modeling Needs D. Zhou, USC

6 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 6 Beyond CMOS Logic Materials & Interfaces Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules Interfaces Spin StateFerroelectric Polarization Negative Capacitance FET Individual or Collective Charge Based States Other Than Charge Only

7 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 7 ERM Device Material e-Workshops Redox RAM Materials Deterministic and Conformal Doping Nanoscale Contact Resistivity Carbon Electronics (Nanotubes and Graphene) Spin Materials & Out of Plane MTJ Materials Strongly Correlated Electron Materials Modeling of Complex Transition Metal Oxide Properties

8 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 8 Lithography Materials Continuing evaluation of novel resist for 193i and EUV LER Rectification to reduce LER and improve line CD control Contact/Via Rectification to reduce size and improve CD control Pattern Density Multiplication for high density smaller features Ruiz, et. al. Science, 2008 Contact/Via Rectification Density Multiplication LER Rectification Stoykovich, et. al. Macromolecules, 2010

9 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 9 Survey on DSA Contact rectification and pattern density multiplication had the highest support Most industry responders had plans to evaluate DSA

10 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 10 Interconnect Materials Interconnects Ultra-thin Barrier Layers (sub 2nm) NH 2 terminated Self Assembled Monolayers (SAM) Graphene Ultra low κ ILD Integration must be a significant focus Novel Interconnects & Vias Graphene, Carbon Nanotubes, Nanocomposites Workshops Ultralow k ILD: Completed Ultrathin Cu Barrier Layers: Completed

11 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 11 Assembly & Package e-Workshops Residue Free Adhesives Insulating polymers with high in plane thermal conductivity [3-5 W/m-K] Electrically conductive flexible adhesive contact material for heterogeneous integration <200C process temperature photopatternable dielectric interposer Nanosolders with high electrical and thermal conductivity Novel EMI shielding materials (graphene, CNT, etc.)

12 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 12 Hexagon of Assembly Material Requirements Highly coupled Material Properties Apply novel materials to achieve optimal performance CTE Modulus Fracture Toughness Functional Properties Moisture Resistance Adhesion Examples Thermal Interface Mat. Mold Compound Underfill Adhesives Epoxy CTE depends on volume fraction

13 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 13 ESH Challenges Materials needed to overcome significant technical challenges –Low energy processes and new materials for low energy integrated circuits –Few materials can meet requirements –Some materials have known hazards or uncharacterized ESH properties –Stimulate ESH research in uncharacterized materials –Good risk management methods for materials ESH in Research, Development & Manufacturing –Lifecycle Assessment & Management –Efficient use of materials

14 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 14 Summary 2011 ERM Chapter will not be updated in 2012 ERM is preparing for 2013 ITRS Rewrite Aligning with iTWG New Requirements Planning e-Workshops Significant Challenges for all Materials

15 ITRS Winter Conference 2012 Hsinchu, Taiwan Work in Progress: Not for Distribution 15 Back-up


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