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Toshitaka Fukushima, Ph.D Fujitsu International Technology Roadmap for Semiconductors 2001.

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Presentation on theme: "Toshitaka Fukushima, Ph.D Fujitsu International Technology Roadmap for Semiconductors 2001."— Presentation transcript:

1 Toshitaka Fukushima, Ph.D Fujitsu International Technology Roadmap for Semiconductors 2001

2 ISS Korea 2002, March 22, T. Fukushima 1992NTRS Transition of ITRS US Domestic International 1991 Micro Tech 2000 Workshop Report 1994NTRS 1997NTRS 2000 ITRS Update 2001 ITRS 1999 ITRS 1998 ITRS Update 1998 World Semiconductor Council http://public.itrs.net

3 ISS Korea 2002, March 22, T. Fukushima Mission of ITRS ITWG Policy Goal Schedule Coordination among ITWGs Coordination among Associations IRC Technology Needs Potential Solutions in near & long terms TWG ESIA KSIA SIA TSIA JEITA STRJ) Design Test FEP etc

4 ISS Korea 2002, March 22, T. Fukushima Scope of ITRS Environment Safety & Health Metrology Yield Enhancement Modeling & Simulation Design Front End Processes Interconnect Lithography Process Integration Assembly & Packaging Factory Integration Test IRC Crosscut ITWGs Focus ITWG

5 ISS Korea 2002, March 22, T. Fukushima Composition of ITRS Members ESIA (Europe) 8% JEITA (Japan) 27% KSIA (S.Korea) 8% TSIA (Taiwan) 19% SIA (US) 38% Device Makers 54% Equipment / Materials Suppliers 20% Others (Design / Assembly / Test) 4% Research Inst. / College, Univ./ National lab. / Consortia 22%

6 ISS Korea 2002, March 22, T. Fukushima Chapters of ITRS 2001 Glossary ORTC 12 ITWGs : Design to Modeling & Simulation - Scope - Difficult Challenges - Technology Requirement - Potential Solutions System Drivers Difficult Challenges Grand Challenges Introduction

7 ISS Korea 2002, March 22, T. Fukushima Technology Node Timing Volume of Production (Parts/Month) Months -24 1K1K 10K 100K 0 1M1M 10M 100M Alpha Tool 1224 -12 DevelopmentProduction Beta Tool Production Tool Top-Runner Company Production Followed by Succeeding Companies within Three Months Conf. Papers Year of Production

8 ISS Korea 2002, March 22, T. Fukushima 0.01 0.1 1 10 1995 2000 2005 Year W.P.C. (Total Worldwide Wafer Production Capacity ( Relative Value) Sources: 1995 to 1999: SICAS, 2000: Yano Research Institute& SIRIJ >0.7 um 0.4-0.7 <0.4 >0.8 um 0.5-0.8 0.35-0.5 0.25- 0.35 0.2 - 0.25 0.18 - 0.2 <0.18 Year 1995-1999 Year 2000 Technology Node (um) Technology Node vs. Actual Wafer Production ITRS Technology Node

9 ISS Korea 2002, March 22, T. Fukushima 2001 ITRS 1999 ITRS 130 0.7 9190 0.7 6465 0.7 45 0.7 3132 0.7 22 100 70 50 35 25 x x x x x ( nm ) Technology Node 130

10 ISS Korea 2002, March 22, T. Fukushima Half Pitch MPU/ASIC DRAM Poly Pitch Metal Pitch

11 ISS Korea 2002, March 22, T. Fukushima FEP Grand Challenges Starting Material Wells Capacitor Stack / Trench Gate Stack Source / Drain - Extension Isolation Channel Contacts Near Term (2001-2007) Enhancing Performance New Gate Stack and Materials : Oxynitride gate dielectric / high performance MOSFETs High gate stack / low operating and low standby power MOSFETs CMOS Integration of New Memory Materials and Processes : High k DRAM capacitor MIM capacitor structures Long Term (2008-2016) Cost-effective Manufacturing Starting Materials alternate beyond 300 mm : Productivity enhancement e.g., 450 mm

12 ISS Korea 2002, March 22, T. Fukushima Interconnect Grand Challenges Near Term (2001-2007) Enhancing Performance Introduction of New Materials : High Conductivity and Low k Dielectric Integration of New Processes and Structures : High Complexity Long Term (2008-2016) Enhancing Performance Identify Solutions which address Global Wiring Scaling: Beyond Copper and Low k Material Innovation to accelerate Design, Package and Interconnect

13 ISS Korea 2002, March 22, T. Fukushima Near Term (2001-2007) Cost-effective Manufacturing Coordinated Design Tools and Simulators : Mix Signal Co-design and Simulation Transient Thermal Analysis Tool Thermal Mechanical Analysis Tool Electrical Analysis Tool Power Disturbs EMI High Frequency / Current and Lower Voltage Switching Assembly & PKG Grand Challenges QFP PGA BGA Chip Package Printed Wiring Board

14 ISS Korea 2002, March 22, T. Fukushima System Drivers Chapter 1999 ITRS Major concerns are DRAM, MPU and ASIC though SOC and AMS (analog / mixed-signa) are slightly mentioned Each devices are assumed to be developed synchronously along the technology node. 2001 ITRS Instead, the Market demands different Technology / Development Timing depending on the Product Line; Technology Development Trends per Market Segment are analized (1) Portable and Wireless(2) Broadband (3) Internet Switching(4) Mass Storage (5) Consumer(6) Computer (7) Automotive Technology / Development Timing Demands by Market Segment are extracted (a) SOC : Multi-technology, High performance, Low cost, Low power (b) AMS : Low-noise amplifier, Power amplifier, VCO, ADC (c) MPU : high-volume custom

15 ISS Korea 2002, March 22, T. Fukushima Emerging Research Devices Section 1999 ITRS Beyond CMOS / Novel Devices 2001 ITRS Technologies to accelerate the performance on the extension of classical Roadmap Non-Classical CMOS New memory device New Technology and Concept beyond classical Roadmap New logic device New architecture

16 ISS Korea 2002, March 22, T. Fukushima Non-Classical CMOS Tr Memory Devices Emerging Research Technologies ULTRA-THIN BODY SOI BAND-ENGINEERED Tr VERTICAL Tr Fin FET DOUBLE-GATE Tr WORD BIT W R n + n + memory node Engineered barrier Si Gate DRAM 2002 Magnetic RAM ~2004 Phase Change Memory ~2004 Nano Floating Gate Memory >2005 Single/Few Electron Memories >2007 Molecular Memories >2010 Near Future

17 ISS Korea 2002, March 22, T. Fukushima Plate S. Node Plug Stack Storage Node Ferro. Film Plate Planar Plate Plug S. Node 3D3D Capacitor Structure FeRAM 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 20002005201020152020 FeRAM DRAM 64G 16G 1M1M 512M

18 ISS Korea 2002, March 22, T. Fukushima DRAM, MPU/ASIC Half Pitch Year of Production Technology Node - DRAM Half-Pitch (nm) 10 100 1000 19951998200120042007201020132016 DRAM ½ Pitch MPU/ASIC ½ Pitch 3-year Cycle 2-year Cycle 130nm 22nm 150nm 90nm

19 ISS Korea 2002, March 22, T. Fukushima MPU Gate Length Year of Production 1000 19951998200120042007201020132016 Technology Node - DRAM Half-Pitch (nm) 10 100 MPU Printed Gate Length MPU Physical Gate Length 2-year Cycle 3-year Cycle 2005 @ITRS99 65nm 90nm 45nm 13nm 32nm 9nm LP-ASIC : 2 years behind to MPU

20 ISS Korea 2002, March 22, T. Fukushima High-k needs to be introduced for LSTP ASIC in 2005: Ig<1pA/um, EOT=1.8nm Gate Dielectrics / EOT nm (High-k) MPU / HP-ASIC in 2007

21 ISS Korea 2002, March 22, T. Fukushima Effective Dielectric Constant (Low-k)

22 ISS Korea 2002, March 22, T. Fukushima Lithography Push Optical Lithography to its Limits : nm Node Requires very tight Control Resist Mask CD Control Introduction of Next Generation Lithography (NGL) Requires New Infrastructure Couldnt reach the Consensus ; in a state of Chaos

23 ISS Korea 2002, March 22, T. Fukushima PEL IPL 157nm PXL Lithography Potential Solutions 2000 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 2016 Node 130 90 65 45 32 22 nm EUV(13nm) ML2 KrF(248nm) ArF(193nm) EPL NGL

24 ISS Korea 2002, March 22, T. Fukushima Design / Test / Assembly & PKG Design Design Cost Model added - Rapid Increasement of Design Cost threatens the future Test Reliability Evaluation added - A lot of difficulties pointed out in ITRS99 eliminated by DFT - Development of New Method for acceleration of Potential Defects needed urgently Assembly and Packaging Scope expanded -, Optoelectronics, Discrete (Passive Component) - Passive Component embeded PCB

25 ISS Korea 2002, March 22, T. Fukushima FI / YE Wafer Mfg. FEOL BEOL Chip Mfg. Probe/Test Singulation Product Mfg. Packaging Test 1999 ITRS 2001 ITRS Factory Integration Scope expanded Yield Enhancement (former Defect Reduction) Scope expanded Defect Detection and Characterization Yield Learning

26 ISS Korea 2002, March 22, T. Fukushima System Drivers Chapter Technology n Development Trends per Market Segment are analized Technology / Development Timing Demands by Market Segment are extracted Emerging Research Devices Section Non-Classical CMOS, new memory device, new logic device and new architecture are proposed DRAM half pitch 3-year Cycle Scaling after 2001(90nm in 2004, 65nm in 2007, 32nm in 2010) MPU / ASIC-HP half pitch 2-year Cycle Scaling until 2004, then 3-year Cycle Scaling MPU / ASIC-HP Gate Length 2-year Cycle Scaling until 2005. LP-ASIC is 2 years behind to MPU High-k Introduction is needed in 2005 for LSTP-ASIC, in 2007 for MPU / HP-ASIC Low-k: decelerated Push Optical Lithography to its Limits No consensus was reached Summary


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